Advanced finishing control

ABSTRACT

Methods of using in situ finishing information for finishing workpieces and semiconductor wafers are described. Methods of using yield information at least in part related to cost of manufacture for finishing workpieces and semiconductor wafers are described. Changes or improvements to cost of manufacture of a workpiece using current in-process cost of manufacture information, tracked current in-process cost of manufacture information, or current cost of manufacture parameters are discussed. Appreciable changes to quality or cost of manufacture of a workpiece using tracking, using in-process tracked information, networks including a multiplicity of apparatus, and using in situ finishing information are discussed. A factory, apparatus, and methods to change or improve process control are discussed. A factory, apparatus, and methods to change or improve real-time process control are discussed. A factory, apparatus, and methods to change or improve feedforward and feedback control are discussed. The workpieces can be tracked individually or by process group such as a process batch.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims benefit of Provisional Application Ser. No.60/107,299 filed on Nov. 6, 1998 entitled “In situ detector forfinishing electronics”; Provisional Application Ser. No. 60/107,300filed on Nov. 6, 1998 entitled “In situ detector for finishingworkpieces”; Provisional Application Ser. No. 60/107,298 filed on Nov.6, 1998 entitled “Fixed abrasive finishing method using lubricants forelectronics”; Provisional Application Ser. No. 60/107,301 filed on Nov.6, 1998 entitled “Finishing method with a fixed abrasive finishingelement having finishing aid”; Provisional Application Ser. No.60/127,393 filed on Apr. 1, 99 entitled “Control of semiconductor waferfinishing”; Provisional Application Ser. No. 60/128,278 filed on Apr. 8,1999 entitled “Improved semiconductor wafer finishing control”,Provisional Application Ser. No. 60/128,281 filed on Apr. 8, 1999entitled “Semiconductor wafer finishing with partial organic boundarylayer lubricant” and Provisional Application Ser. No. 60/754,095 filedon Dec. 27, 2005 entitled “Advanced workpiece finishing”. Thisapplication claims benefit of Regular patent application Ser. No.09/435,181 filed on Nov. 5, 1999 with title “In situ friction detectormethod for finishing semiconductor wafers”, Regular patent applicationSer. No. 09/533,409 filed on Mar. 29, 2000 entitled “Improvedsemiconductor wafer finishing control”, Ser. No. 09/939,957 filed onAug. 27, 2001 entitled “In situ friction detector method and apparatus”,Ser. No. 10/730,631 filed on Dec. 8, 2003 entitled “In situ finishingcontrol”, Ser. No. 11/593,307 filed on Nov. 6, 2006 entitled “Advancedfinishing control”, Ser. No. 11/801,031 filed on May 8, 2007 entitled“Advanced finishing control”, and Ser. No. 11/978,367 filed on Oct. 29,2007 entitled “Advanced finishing control”.

Provisional Applications and Regular patent applications above areincluded herein by reference in their entirety.

BACKGROUND OF INVENTION

Chemical mechanical polishing (CMP) is generally known in the art. Forexample U.S. Pat. No. 5,177,908 to Tuttle issued in 1993 describes afinishing element for semiconductor wafers, having a face shaped toprovide a constant, or nearly constant, surface contact rate to aworkpiece such as a semiconductor wafer in order to effect improvedplanarity of the workpiece. U.S. Pat. No. 5,234,867 to Schultz et. al.issued in 1993 describes an apparatus for planarizing semiconductorwafers which in a preferred form includes a rotatable platen forpolishing a surface of the workpiece and a motor for rotating the platenand a non-circular pad is mounted atop the platen to engage and polishthe surface of the semiconductor wafer. Fixed abrasive finishingelements are also known for polishing semiconductor layers. An exampleis WO 98/18159 PCT application by Minnesota Mining and Manufacturing.

Semiconductor wafer fabrication generally requires the formation oflayers of material having particularly small thickness. A typicalconductor layer, such as a metal layer, is generally 2,000 to 6,000angstroms thick and a typical insulating layer, for example an oxidelayer, is generally 3,000 to 5,000 angstroms thick. The actual thicknessis at least partially dependent on the function of the layer along withthe function and design of the semiconductor wafer. A gate oxide layercan be less than 100 angstroms while a field oxide is in the thousandsof angstroms in thickness. In higher density and higher valuesemiconductor wafers the layers can be below 500 angstroms in thickness.Generally during semiconductor fabrication, layers thicker thannecessary are formed and then thinned down to the required toleranceswith techniques needed such as Chemical Mechanical Polishing. Because ofthe strict tolerances, extreme care is given to attaining the requiredthinned down tolerances. As such, it is important to accuratelydetermine just when enough of the layer has been removed to reach therequired tolerances, this is the end point for the thinning or polishingoperation. One method to remove selected amounts of material is toremove the semiconductor wafer periodically from polishing formeasurements such as thickness layer measurements. Although this can bedone it is time consuming and adds extra expense to the operation.Further the expensive wafers can be damaged during transfer to or fromthe measurement process further decreasing process yields and increasingcosts.

BRIEF SUMMARY OF INVENTION

Confidential applicant evaluations also suggest that lubricants suppliedto the interface between the workpiece surface being finished and thepolishing pad polishing surface can improve finishing. Addition oflubricants to the interface between the workpiece surface being finishedand the polishing pad polishing surface can improve finishing but alsochanges the friction at this interface. In situ process control wherelubricants are added or changed during the finishing process can changefinishing performance. A method to detect in process changes due tolubricant additions and/or changes is needed in the industry. A methodwhich can also help improve the cost of manufacture of the semiconductorwafers during a finishing cycle time having real time friction changeswould be generally desirable.

As discussed above, there is a need for in situ detector for CMP andother finishing techniques which will function with or without theaddition lubrication to the finishing interface. There is a need for anin situ detector and control of CMP and other finishing controlparameters which account for and adjust for the addition and/or controlof lubrication at the finishing interface. There is a need for an insitu detector and control of CMP and other finishing control parameterswhich detect the endpoint and/or/stop the CMP and/or other finishingprocesses. There is a need to use cost of manufacture parameters forreal time process control. There is a need to use real time processcontrol and current cost of manufacture. There is a need for in situand/or real time improvements to cost of manufacture of a workpiece suchas a semiconductor wafer can be made by tracking and using currentin-process cost of manufacture information and cost of manufactureparameters. There is a need for in situ and/or real time improvements tocost of manufacture of a workpiece such as a semiconductor wafer can bemade by using a cost of manufacture model using current in-process costof manufacture information and current in-process cost of manufactureparameters. There is a need for in situ and/or real time improvements tocost of manufacture of a workpiece such as a semiconductor wafer can bemade by using a cost of manufacture model using tracked currentin-process cost of manufacture information and tracked currentin-process cost of manufacture parameters.

It is an advantage of this invention to develop an in situ frictionsensor subsystem and finishing sensor subsystem for CMP and otherfinishing techniques and methods which function with or without theaddition lubrication to the finishing interface. It is an advantage ofthis invention to develop an in situ friction sensor subsystem andfinishing sensor subsystem for control of CMP and other finishingcontrol parameters which account for and adjust for the addition and/orcontrol of lubrication at the finishing interface. It is an advantage ofthis invention to develop an in situ friction sensor subsystem andfinishing sensor subsystem CMP and other finishing control parameterswhich detect the endpoint and stop the CMP and/or other finishingprocesses. It is an advantage of this invention to use cost ofmanufacture parameters for real time process control when usingoperative friction sensors. It is an advantage of this invention todevelop to use real time process control and current cost of manufacturewith active lubrication of the interface to improve the finishing costs.It is an advantage of this invention to develop a method which can alsohelp improve the cost of manufacture of the semiconductor wafers duringa finishing cycle time having real time friction changes. It is anadvantage of this invention to develop in situ and/or real timeimprovements to cost of manufacture of a workpiece such as asemiconductor wafer using tracking and using current in process cost ofmanufacture information and/or cost of manufacture parameters. It is anadvantage of this invention to change and/or improve in situ and/or realtime process control. It is an advantage of this invention to make insitu and/or real time improvements to cost of manufacture of a workpiecesuch as a semiconductor wafer can be made by using a cost of manufacturemodel using current in-process cost of manufacture information andcurrent in-process cost of manufacture parameters. It is an advantage ofthis invention to make in situ and/or real time improvements to cost ofmanufacture of a workpiece such as a semiconductor wafer can be made byusing a cost of manufacture model using tracked current in-process costof manufacture information and tracked current in-process cost ofmanufacture parameters.

A preferred embodiment of this invention is directed to a method forprocessing a workpiece, the method comprising providing i) an at leastone finishing apparatus “A” for an at least one finishing operation, ii)an at least one piece of workpiece fabrication machinery “B” other thanthe at least one finishing apparatus “A”, iii) an at least one piece ofmetrology equipment, iv) an at least one processor readable memorydevice, v) an at least one operative computerized network connecting theat least one processor readable memory device, the at least onefinishing apparatus “A”, the at least one piece of workpiece fabricationmachinery “B”, and the at least one piece of metrology equipment; andfinishing the workpiece with the at least one finishing apparatus; andsensing an in situ finishing information with an operative sensor; anddetermining a change for a process control parameter using an at leastone processor, the at least one operative computerized network, and afamily of processing information comprising (i) an at least one yieldinformation at least in part related to cost of manufacture, (ii) the insitu finishing information, (iii) an information from the at least onepiece of metrology equipment at least in part related to the at leastone finishing operation, (iv) an information at least in part related tothe at least one finishing apparatus “A”, and (v) an information atleast in part related to the at least one workpiece fabricationmachinery “B” and at least in part related to the at least one finishingoperation; and changing the process control parameter to change aprocessing control with an operative controller and wherein theprocessing control comprises a processing control at least in partrelated to the at least one finishing operation.

A preferred embodiment of this invention is directed to a method forprocessing a workpiece, the method comprising providing i) an at leastone planarizing apparatus “A” for an at least one planarizing operation,ii) an at least one piece of workpiece fabrication machinery “B” otherthan the at least one planarizing apparatus “A”, iii) an at least onepiece of metrology equipment, iv) an at least one processor readablememory device, v) an at least one operative computerized networkconnecting the at least one processor readable memory device, the atleast one planarizing apparatus “A”, the at least one piece of workpiecefabrication machinery “B”, and the at least one piece of metrologyequipment; and planarizing the workpiece with the at least oneplanarizing apparatus; and sensing an in situ planarizing informationwith an operative sensor; and determining a change for a process controlparameter using an at least one processor, the at least one operativecomputerized network, and a family of processing information comprising(i) an at least one yield information at least in part related to costof manufacture, (ii) the in situ planarizing information, (iii) aninformation from the at least one piece of metrology equipment at leastin part related to the at least one planarizing operation, (iv) aninformation at least in part related to the at least one planarizingapparatus “A”, and (v) an information at least in part related to the atleast one workpiece fabrication machinery “B” and at least in partrelated to the at least one planarizing operation; and changing theprocess control parameter to change a processing control with anoperative controller and wherein the processing control comprises aprocessing control at least in part related to the at least oneplanarizing operation.

A preferred embodiment of this invention is directed to a method forprocessing a workpiece, the method comprising providing i) an at leastone polishing apparatus “A” for an at least one polishing operation, ii)an at least one piece of workpiece fabrication machinery “B” other thanthe at least one polishing apparatus “A”, iii) an at least one piece ofmetrology equipment, iv) an at least one processor readable memorydevice, v) an at least one operative computerized network connecting theat least one processor readable memory device, the at least onepolishing apparatus “A”, the at least one piece of workpiece fabricationmachinery “B”, and the at least one piece of metrology equipment; andpolishing the workpiece with the at least one polishing apparatus; andsensing an in situ polishing information with an operative sensor; anddetermining a change for a process control parameter using an at leastone processor, the at least one operative computerized network, and afamily of processing information comprising (i) an at least one yieldinformation at least in part related to cost of manufacture, (ii) the insitu polishing information, (iii) an information from the at least onepiece of metrology equipment at least in part related to the at leastone polishing operation, (iv) an information at least in part related tothe at least one polishing apparatus “A”, and (v) an information atleast in part related to the at least one workpiece fabricationmachinery “B” and at least in part related to the at least one polishingoperation; and changing the process control parameter to change aprocessing control with an operative controller and wherein theprocessing control comprises a processing control at least in partrelated to the at least one polishing operation.

One or more of these advantages are found in the embodiments of thisinvention. Illustrative preferred advantages can include higher profitsand/or controlled costs during finishing of a workpiece. Illustrativepreferred advantages can include one or more improvements in quality.Illustrative preferred advantages can include an appreciable change tothe cost of manufacture or profitability. These and other advantages ofthe invention will become readily apparent to those of ordinary skill inthe art after reading the following disclosure of the invention. Otherpreferred embodiments are discussed herein.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is an artist's drawing of a preferred embodiment of thisinvention from a top down perspective.

FIG. 2 is an artist's close up drawing of a particular preferredembodiment of this invention including the interrelationships of thedifferent objects when finishing according to this invention.

FIG. 3 is a drawing of a preferred embodiment of this invention FIG. 4is cross-sectional view of a thermal sensor probe

FIG. 5 is an artist's simplified view the some major components in afinishing sensor subsystem of a preferred embodiment of this invention.

FIG. 6 is a plot of cost of ownership vs defect density

FIG. 7 is a plot of cost of ownership vs equipment yield

FIG. 8 is a plot of cost of ownership vs parametric yield loss

FIG. 9 is a plot of finishing rate effect on cost of ownership

FIGS. 10-13 illustrate preferred methods of finishing

FIG. 14 a & b are embodiments of networked control subsystems andapparatus

FIG. 15 a & b are embodiments of networked control subsystems andapparatus in an illustrative factory (or portion(s) of a factory)

FIG. 16 is an embodiment of networked control subsystems and apparatusin a factory

REFERENCE NUMERALS IN DRAWINGS

Reference Numeral 20 workpiece

Reference Numeral 21 workpiece surface facing away from the workpiecesurface being finished.

Reference Numeral 22 surface of the workpiece being finished

Reference Numeral 23 center of rotation of the workpiece

Reference Numeral 24 finishing element

Reference Numeral 26 finishing element finishing surface

Reference Numeral 28 finishing element surface facing away fromworkpiece surface being finished

Reference Numeral 29 finishing composition and, optionally, alternatefinishing composition

Reference Numeral 30 direction of rotation of the finishing elementfinishing surface

Reference Numeral 32 direction of rotation of the workpiece beingfinished

Reference Numeral 33 force applied perpendicular to operative finishingmotion

Reference Numeral 34 operative finishing motion between the workpiecesurface being finished and the finishing element finishing surface

Reference Numeral 35 applied pressure between the workpiece surfacebeing finished and the finishing element finishing surface

Reference Numeral 36 operative finishing motion between the firstfriction sensor probe surface and the finishing element finishingsurface

Reference Numeral 37 applied pressure between the second friction sensorprobe surface and the finishing element finishing surface

Reference Numeral 38 operative friction motion between the secondfriction sensor probe surface and the finishing element finishingsurface

Reference Numeral 39 applied pressure between the second friction sensorprobe surface and the finishing element finishing surface

Reference Numeral 40 finishing composition feed line

Reference Numeral 41 reservoir of finishing composition

Reference Numeral 42 feed mechanism for finishing composition

Reference Numeral 46 alternate finishing composition feed line

Reference Numeral 47 alternate reservoir of finishing composition

Reference Numeral 48 alternate feed mechanism for finishing composition

Reference Numeral 50 first friction sensor probe

Reference Numeral 51 first friction sensor surface

Reference Numeral 52 first friction probe motor

Reference Numeral 54 operative connection between first friction sensorprobe and first friction drive motor

Reference Numeral 56 second friction sensor probe

Reference Numeral 57 second friction sensor surface

Reference Numeral 58 second friction probe motor

Reference Numeral 56 operative connection between second friction sensorprobe and second friction drive motor

Reference Numeral 61 unwanted raised surface region on the workpiece

Reference Numeral 62 carrier

Reference Numeral 63 operative contact element

Reference Numeral 64 motor for carrier

Reference Numeral 70 platen

Reference Numeral 72 surface of platen facing finishing element

Reference Numeral 74 surface of platen facing base support structure

Reference Numeral 76 surface of the base support structure facing theplaten

Reference Numeral 77 base support structure

Reference Numeral 78 surface of the base support structure facing awayfrom the platen

Reference Numeral 90 body of a friction sensor probe

Reference Numeral 92 insulation in a friction sensor probe

Reference Numeral 94 friction sensor element

Reference Numeral 95 friction sensor surface

Reference Numeral 96 operative friction sensor

Reference Numeral 98 thermal adjustment for port friction sensor probe

Reference Numeral 102 operative sensor connections

Reference Numeral 104 processor

Reference Numeral 106 operative connection(s) between processor andcontroller

Reference Numeral 108 controller

Reference Numeral 110 operative connection(s) between controller andequipment controlled

Reference Numeral 200 substantially perpendicular force applied to theinterface between the friction sensor probe and the finishing elementfinishing surface.

Reference Numeral 202 represents a parallel motion in the interfacebetween the friction sensor probe and the finishing element finishingsurface

Reference Numeral 500 operative sensor

Reference Numeral 510 processor

Reference Numeral 520 controller

Reference Numeral 530 operative connections for controlling

DETAILED DESCRIPTION OF THE INVENTION

The book Chemical Mechanical Planarization of Microelectric Materials bySteigerwald, J. M. et al published by John Wiley & Sons, ISBN 0471138274generally describes chemical mechanical finishing and is included hereinby reference in its entirety for general background. In chemicalmechanical finishing the workpiece is generally separated from thefinishing element by polishing slurry. The workpiece surface beingfinished is in parallel motion with finishing element finishing surfacedisposed towards the workpiece surface being finished. The abrasiveparticles such as found in a polishing slurry interposed between thesesurfaces finish the workpiece. FIGS. 1-5 are now discussed to betterillustrate the invention.

Discussion of some of the terms useful to aid in understanding thisinvention is now presented. Finishing is a term used herein for bothplanarizing and polishing. Planarizing is the process of making asurface which has raised surface perturbations or cupped lower areasinto a planar surface and thus involves reducing or eliminating theraised surface perturbations and cupped lower areas. Planarizing changesthe topography of the workpiece from non planar to ideally perfectlyplanar. Polishing is the process of smoothing or polishing the surfaceof an object and tends to follow the topography of the workpiece surfacebeing polished. A finishing element is a term used herein to describe apad or element for both polishing and planarizing. A finishing elementfinishing surface is a term used herein for a finishing element surfaceused for both polishing and planarizing. A finishing element planarizingsurface is a term used herein for a finishing element surface used forplanarizing. A finishing element polishing surface is a term used hereinfor a finishing element surface used for polishing. Workpiece surfacebeing finished is a term used herein for a workpiece surface undergoingeither or both polishing and planarizing. A workpiece surface beingplanarized is a workpiece surface undergoing planarizing. A workpiecesurface being polished is a workpiece surface undergoing polishing. Thefinishing cycle time is the elapsed time in minutes that the workpieceis being finished. A portion of a finishing cycle time is about 5% to95% of the total finishing cycle time in minutes and a more preferredportion of a finishing cycle time is 10% to 90% of the total finishingcycle time in minutes. The planarizing cycle time is the elapsed time inminutes that the workpiece is being planarized. The polishing cycle timeis the elapsed time in minutes that the workpiece is being polishing.

As used herein, an emulsion is a fluid containing a microscopicallyheterogeneous mixture of two (2) normally immiscible liquid phases, inwhich one liquid forms minute droplets suspended in the other liquid. Asused herein, a surfactant is a surface active substance, i.e., alters(usually reduces) the surface tension of water. Non limiting examples ofsurfactants include ionic, nonionic, and cationic. As used herein, alubricant is an agent that reduces friction between moving surfaces. Ahydrocarbon oil is a non limiting example. As used herein, soluble meanscapable of mixing with a liquid (dissolving) to form a homogeneousmixture (solution).

As used herein, a dispersion is a fluid containing a microscopicallyheterogeneous mixture of solid phase material dispersed in a liquid andin which the solid phase material is in minute particles suspended inthe liquid. As used herein, a surfactant is a surface active substance,i.e., alters (usually reduces) the surface tension of water. Nonlimiting examples of surfactants include ionic, nonionic, and cationic.As used herein, a lubricant is an agent that reduces friction betweenmoving surfaces. As used herein, soluble means capable of mixing with aliquid (dissolving) to form a homogeneous mixture (solution).

As used herein, a die is one unit on a semiconductor wafer generallyseparated by scribe lines. After the semiconductor wafer fabricationsteps are completed, the die are separated into units generally bysawing. The separated units are generally referred to as “chips”. Eachsemiconductor wafer generally has many die which are generallyrectangular. The terminology semiconductor wafer and die are generallyknown to those skilled in the arts. As used herein, within dieuniformity refers to the uniformity of within the die. As used herein,local planarity refers to die planarity unless specifically definedotherwise. Within wafer uniformity refers to the uniformity of finishingof the wafer. As used herein, wafer planarity refers to planarity acrossa wafer. Multiple die planarity is the planarity across a defined numberof die. As used herein, global wafer planarity refers to planarityacross the entire semiconductor wafer planarity. Planarity is importantfor the photolithography step generally common to semiconductor waferprocessing, particularly where feature sizes are less than 0.25 microns.As used herein, a device is a discrete circuit such as a transistor,resistor, or capacitor. As used herein, pattern density is ratio of theraised (up) area in square millimeters to the to area in squaremillimeters of region on a specific region such as a die orsemiconductor wafer. As used herein, pattern density is ratio of theraised (up) area in square millimeters to the total area in squaremillimeters of region on a specific region such as a die orsemiconductor wafer. As used herein, line pattern density is the ratioof the line width to the pitch. As used herein, pitch is line width plusthe oxide space. As an illustrative example, pitch is the copper linewidth plus the oxide spacing. Oxide pattern density, as used herein, isthe volume fraction of the oxide within an infinitesimally thin surfaceof the die.

As used herein, appreciable means capable of being readily perceived orestimated; considerable. An appreciable change to a cost of manufactureof a workpiece is a change that is readily perceived or estimated; aconsiderable change. An appreciable change to a finishing a workpiece isa change that is readily perceived or estimated; considerable. A changefinishing selected from the group consisting of finishing rate measuredangstroms per minute, cost of manufacture, and quality is a preferredexample of a finishing change. A change finishing selected from thegroup consisting of workpiece surface quality and workpieceprofitability is another preferred example of a finishing change.

FIG. 1 is an artist's drawing of a particularly preferred embodiment ofthis invention when looking from a top down perspective including theinterrelationships of some important objects when finishing according tothe method of this invention. Reference Numeral 20 represents theworkpiece being finished. Reference Numeral 23 is the center of therotation of the workpiece. The workpiece surface facing the finishingelement finishing surface is the workpiece surface being finished.Reference Numeral 24 represents the finishing element. Reference Numeral26 represents the finishing element finishing surface. A finishingelement finishing surface which is free of abrasive particles connectedto the finishing surface is preferred for some applications. For theseapplications, a finishing element finishing surface which is free ofinorganic abrasive particles connected to the finishing surface is morepreferred and a finishing element finishing surface which is free offixed abrasive particles is even more preferred. Abrasive particleswhich are connected to and/or fixed to the finishing surface increasethe possibility of causing unwanted surface damage to the workpiecesurface being finished but it is currently believed that lubrication ofthe operative finishing interface can reduce or eliminate some of theseharmful effects of finishing elements finishing surfaces having a fixedabrasive. It is important to measure and control active lubrication atthe operative finishing interface to minimize some of these harmfuleffects. It is important to have a finishing feedback subsystem with canmonitor and function well with or without lubricant changes at theoperative finishing interface. By having a finishing surfaces which arefree of attached abrasive particles, potential damage from fixedabrasives is avoided. By having the real time friction sensor subsystemsand finishing sensor subsystems of this invention, changes in frictiondue to real time lubrication at the operative finishing interface can besensed, controlled and adjusted to improve finishing, with a finishingelement surface free of fixed abrasives and with a finishing elementsurface having fixed abrasives. Feeding a finishing composition withoutabrasives is preferred and feeding a finishing composition withoutabrasive particles is more preferred. Supplying a finishing compositionwithout abrasives is preferred and supplying a finishing compositionwithout abrasive particles is more preferred. Feeding a water bornefinishing composition having a lubricant which free of abrasiveparticles is also preferred and feeding a water borne finishingcomposition having a lubricant which is free of abrasive particles isparticularly preferred. A lubricant free of separate and unconnectedabrasive particles is preferred. Reference Numeral 30 represents thedirection of rotation of the finishing element finishing surface.Reference Numeral 32 represents the direction of rotation of theworkpiece being finished. Reference Numeral 40 represents a finishingcomposition feed line for adding chemicals to the surface of theworkpiece such as acids, bases, buffers, other chemical reagents,abrasive particles and the like. The finishing composition feed line canhave a plurality of exit orifices. A preferred finishing composition isfinishing slurry. Reference Numeral 41 represents a reservoir of afinishing composition to be fed to a finishing element finishingsurface. Reference Numeral 42 represents a feed mechanism for thefinishing composition such as a variable air or gas pressure or a pumpmechanism. Reference Numeral 46 represents an alternate finishingcomposition feed line for adding a finishing chemicals composition tothe finishing element finishing surface to improve the quality offinishing. Reference Numeral 47 represents an alternate finishingcomposition reservoir of chemicals to be, optionally, fed to finishingelement finishing surface. The alternate finishing composition can alsocontain abrasive particles and thus can be a finishing slurry. Supplyinga finishing composition without abrasives is preferred and supplying afinishing composition without abrasive particles is more preferred forsome applications such as where a fixed abrasive finishing elementfinishing surface is used for finishing. Supplying a lubricant which isfree of an encapsulating film or encapsulating thin resin structure ispreferred. Encapsulating lubricants is an expensive and complex stepwhich is unnecessary in this invention. Further, encapsulated lubricantstend to burst on breaking and can deliver higher than desired localizedlubricants to regions. Further, the encapsulated lubricants canprematurely burst releasing their contents during manufacture of theslurry and/or finishing element. This can contaminate the slurry and/orfinishing element and adversely affect their respective finishingperformance. Reference Numeral 48 represents a feed mechanism for thealternate finishing composition such as a variable pressure or a pumpmechanism. A preferred embodiment of this invention is to feed liquidsfree of abrasives from the finishing composition feed line and thealternate finishing composition feed line in which at least one feed hasa liquid having abrasive particles in a slurry. Another preferredembodiment, not shown, is to have a wiping element, preferably anelastomeric wiping element, to uniformly distribute the finishingcomposition(s) across the finishing element finishing surface. Multiplenozzles to feed the finishing composition and alternate finishingcomposition can be preferred to better distribute them across thefinishing element finishing surface. Nonlimiting examples of somepreferred dispensing systems and wiping elements are found in U.S. Pat.No. 5,709,593 to Guthrie et. al., U.S. Pat. No. 5,246,525 to Junichi,and U.S. Pat. No. 5,478,435 to Murphy et. al. and are included herein byreference in their entirety for general guidance and appropriatemodifications by those generally skilled in the art for supplyinglubricants. Alternately supplying the finishing composition throughpores or holes in the finishing element finishing surface to effect auniform distribution of the lubricant is also effective. ReferenceNumeral 50 represents a first friction sensor probe. Reference Numeral56 represents a optional second friction sensor probe. A thermal sensorprobe is a preferred friction sensor probe. An infrared sensor probe isa preferred thermal sensor probe. A thermocouple probe is a preferredthermal sensor probe. A thermistor probe is a preferred thermal sensorprobe. Reference Numeral 500 represents an operative sensor. A workpiecesensor is an illustrative example of an operative sensor. An opticalsensor is another illustrative example of an operative sensor. Afriction sensor is another example of an operative sensor. ReferenceNumeral 510 represents a processor. Reference Numeral 520 represents acontroller. Reference Numeral 530 represents the operative connectionsfor controlling. A preferred control subsystem has an operative sensor,a processor, and a controller. A control subsystem having at least oneoperative sensor is preferred and having at least two operative sensorsis more preferred and having at least three operative sensors is evenmore preferred and having at least five operative sensors is even morepreferred. A control subsystem having at least one operative processoris preferred and having at least two operative processors is morepreferred and having at least three operative processors is even morepreferred and having at least five operative processors is even morepreferred. The illustration of the sensor, processor, and controller ismerely an example generally understood by those skilled in the art andcan generally exist in many different arrangement such as combined in asingle unit or separate and distinct units and numerous combinationsthereof.

FIG. 2 is an artist's closeup drawing of a preferred embodiment of thisinvention showing some further interrelationships of the differentobjects when finishing according to the method of this invention.Reference Numeral 62 represents a carrier for the workpiece and in thisparticular embodiment, the carrier is a rotating carrier. The rotatingcarrier is operable to rotate the workpiece against the finishingelement which rests against the platen and optionally has a motor.Optionally, the rotating carrier can also be designed to move theworkpiece laterally, in an arch, figure eight, or orbitally to enhanceuniformity of polishing. The workpiece is in operative contact with therotating carrier and optionally, has an operative contact element(Reference Numeral 63) to hold the workpiece to the carrier duringfinishing. An illustrative example of an operative contact element(Reference Numeral 63) is a workpiece held in place to the rotatingcarrier with a bonding agent. A hot wax is an illustrative example of apreferred bonding agent. Alternately, a porometric film can be placed inthe rotating carrier having a recess for holding the workpiece. A wettedporometric film (an alternate operative contact element, ReferenceNumeral 63) will hold the workpiece in place by surface tension. Anadherent thin film is another preferred example of placing the workpiecein operative contact with the rotating carrier. Reference Numeral 20represents the workpiece. Reference Numeral 21 represents the workpiecesurface facing away from the workpiece surface being finished. ReferenceNumeral 22 represents the surface of the workpiece being finished.Reference Numeral 24 represents the finishing element. Reference Numeral26 represents the finishing element surface facing the workpiece surfacebeing finished and is often referred to herein as the finishing elementfinishing surface. Reference Numeral 28 represents the surface of thefinishing element facing away from the workpiece surface being finished.Reference Numeral 29 represents the finishing composition andoptionally, the alternate finishing composition supplied between theworkpiece surface being finished and surface of the finishing elementfacing the workpiece. Reference Numeral 33 represents a force appliedperpendicularly to the operative finishing motion. Reference Numeral 34represents a preferred direction of the operative finishing motionbetween the surface of the workpiece being finished and the finishingelement finishing surface. Reference Numeral 70 represents the platen orsupport for the finishing element. The platen can also have an operativefinishing motion relative to the workpiece surface being finished.Reference Numeral 72 represents the surface of the platen facing thefinishing element. The surface of the platen facing the finishingelement is in support contact with the finishing element surface facingaway from the workpiece surface being finished. The finishing elementsurface facing the platen can, optionally, be connected to the platen byadhesion. Frictional forces between the finishing element and the platencan also retain the finishing element against the platen. ReferenceNumeral 74 is the surface of the platen facing away from the finishingelement. Reference Numeral 76 represents the surface of the base supportstructure facing the platen. Reference Numeral 77 represents the basesupport structure. Reference Numeral 78 represents the surface of thebase support structure facing away from the platen. The rotatablecarrier (Reference Number 70) can be operatively connected to the basestructure to permit improved control of pressure application at theworkpiece surface being finished (Reference Numeral 22).

FIG. 3 is an artist's drawing of a preferred embodiment of thisinvention showing some further interrelationships of some of some theobjects when finishing according to the method of this invention.Reference Numeral 20 represents the workpiece being finished. ReferenceNumeral 21 represents the workpiece surface facing away from thefinishing element finishing surface. Reference Numeral 22 represents theworkpiece surface being finished. Reference Numeral 61 represents anunwanted raised region on the workpiece surface being finished.Reference Numeral 62 represents a simplified view of the carrier for theworkpiece. The carrier for the workpiece can have a number of preferredoptions, depending on the finishing required, such as a retainer ring, afluid filled chuck, and/or a chuck capable of applying localizeddifferential pressures across the wafer to better control waferfinishing. Reference Numeral 64 represents the optionally preferredmotor for applying a finishing motion to workpiece being finished.Reference Numeral 34 represents a preferred operative finishing motion.Reference Numeral 35 represents a preferred operative pressure appliedto workpiece surface by urging it against or towards the finishingelement finishing surface. Reference Numeral 40 represents the finishingcomposition feed line. The alternate finishing feed line, ReferenceNumeral 46, is behind the Reference Numeral 40 and thus is not shown inthis particular artist's drawing. Reference Numeral 24 represents thefinishing element. Reference Numeral 26 represents the finishing elementfinishing surface. Reference Numeral 28 represents the finishing elementsurface facing away from the workpiece surface being finished. ReferenceNumeral 29 represents the finishing composition and optionally, thealternate finishing composition supplied between the workpiece surfacebeing finished and surface of the finishing element facing theworkpiece. Reference Numeral 50 represent a first friction sensor probe.An operative friction sensor capable of gaining information about thefinishing is preferred. An operative finishing sensor capable of gaininginformation about the finishing is also preferred. Examples of discussedherein below of operative friction sensors and operative finishingsensors. Reference Numeral 51 represents the surface of the firstfriction probe in friction contact with finishing element finishingsurface and is often referred to herein as the first friction sensorsurface. Reference Numeral 52 represents an optional motor to rotate thefirst friction sensor probe. Reference Numeral 54 represents an optionaloperative connection between the first friction sensor probe and motor.Reference Numeral 36 represent a preferred friction motion between thefirst friction sensor probe friction sensor surface and the finishingelement finishing surface. Reference numeral 37 represents an operativepressure applied to first friction probe friction sensor surface byurging it against or towards the finishing element finishing surface.Reference Numeral 56 represent a preferred optional second frictionsensor probe. Reference Numeral 57 represents the surface of the secondfriction probe in friction contact with finishing element finishingsurface and is often referred to herein as the second friction sensorsurface. Reference Numeral 58 represents an optional second motor torotate the second friction sensor probe. Reference Numeral 60 representsan optional second operative connection between the second frictionsensor probe and an optional motor. Reference Numeral 38 represent apreferred friction motion between the second friction sensor probefriction sensor surface and the finishing element finishing surface.Reference numeral 39 represents an operative pressure applied to secondfriction probe friction sensor surface by urging it against or towardsthe finishing element finishing surface. The operative finishing motion,the operative first friction motion, and the operative second frictionmotion can differ between each other and are preferably controlledindependently of each other's motions and/or pressures.

FIG. 4 is an artist's drawing of a preferred embodiment of one type ofpreferred friction sensor probe useful for this invention showing somefurther interrelationships of the sections in the friction sensor probe.Reference Numeral 50 represents the friction sensor probe. ReferenceNumeral 90 represents the body of the friction sensor probe. The body ofthe friction sensor probe can be comprised of many different materials.A friction sensor probe body comprising metal or plastic is preferred.Reference Numeral 92 represents optional, but preferred insulation inthe friction sensor probe. Reference Numeral 94 represents a frictionsensor element for the friction sensor probe. During operation, thefriction sensor surface (Reference Numeral 95) is in operative frictionmotion with the finishing element finishing surface and the results ofthis friction are measured by a friction sensor probe. Shown in thisembodiment is an operative friction sensor such as a thermal couple(Reference Numeral 96) which measures friction during operative frictionmotion by measuring changes in temperature due to increased or decreasedfriction. A friction sensor surface which responds to operative frictionmotion is preferred. A friction sensor surface which responds tooperative friction motion related to the workpiece surface beingfinished (or material contained therein) in a manner expressible by amathematical equation is preferred. Reference Numeral 94 represents anoptional insulating material contained in the friction sensor probe bodyto improve accuracy of measurement of temperature changes and to reduceheat losses. Reference Numeral 96 represents a non-optical frictionsensor which in this particular embodiment is a thermocouple. Athermocouple is a preferred example of a non-optical friction sensor.Reference Numeral 98 represents an thermal adjustment port can be usedto adjust the temperature upwards or downwards. A thermal adjustmentport for feeding fluid cooling medium is preferred and feeding a gascooling medium is especially preferred. The optional cooling port isuseful to change and more particularly to decrease the temperaturerapidly and economically between workpieces being finished.

Some preferred embodiments for the friction sensor element and itsfriction sensor surface will now be discussed further. A friction sensorelement for the friction sensor probe can be an integral member of thefriction sensor probe body. This is an example of a preferred permanentfriction sensor element attachment to the friction sensor surface. Areplaceable friction sensor element is preferred for a number ofapplications because it can lower the cost of finishing the workpieces.The replaceable friction sensor element is preferably attached to thefriction sensor probe body. A preferred example of a replaceablefriction sensor element is a temporary friction sensor element. Atemporary attachment mechanism attaching the replaceable friction sensorelement to the friction sensor probe body is one preferred attachmentmechanism. A preferred replaceable friction sensor element can beattached to the friction sensor body with a temporary adhesive mechanismor a temporary mechanical attachment mechanism. A preferred temporarymechanical attachment mechanism is a mechanism selected from the groupconsisting of a friction fit mechanism, a snap fit mechanism, and a camlock mechanism. The friction sensor element can be adhered to thefriction sensor probe body, snap fit in the friction body, and/orfriction fit in the friction sensor probe body. A preferred temporaryadhesive mechanism includes a temporary adhesive coating, temporaryadhesive surface, and a temporary adhesive tape. A permanently attachedfriction sensor element can also be preferred for some applications.These friction sensor probes can easily be replaced as a unit and thusreduce operator time for changes. A permanently attached friction sensorsurface can be permanently adhered to the friction sensor body, moldedinto the friction sensor body, or permanently mechanically attached tothe friction sensor body. An abrasion resistant friction sensor surfaceis often preferred because they last longer in service.

Different friction sensor surfaces are preferred for different finishingapplications. A friction sensor surface that responds in a similarmanner to friction as the workpiece surface or a region of the workpiecesurface is often preferred. A preferred workpiece is a heterogeneoussemiconductor wafer surface having conductive regions and nonconductiveregions. Semiconductor wafer surfaces having a heterogeneoussemiconductor wafer surface needed finishing, particularly planarized,are generally well known to those skilled in the semiconductor arts. Aquartz friction sensor surface is preferred because it is low cost andis substantially abrasion resistant. A quartz friction sensor surface isoften a low cost material that approximates a non conductive regionproximate to the surface of the heterogeneous semiconductor wafer duringfinishing. A friction sensor surface comprising a silicon dioxidecomposition is a preferred friction sensor surface. A non conductivefriction sensor surface can be preferred for some finishingapplications, particularly where the workpiece has a non conductiveregion being finished. A friction sensor surface comprised of a metal isoften preferred. A friction sensor surface comprising an aluminumcomposition is a preferred friction sensor surface. A friction sensorsurface comprising a tungsten composition is a preferred friction sensorsurface. A friction sensor surface comprising a copper composition is apreferred friction sensor surface. A friction sensor surface comprisinga conductive composition is a preferred friction sensor surface,particularly where the workpiece has conductive regions being finished.A friction sensor surface comprising a synthetic polymeric compositionis a preferred friction sensor surface. A friction sensor surfacecomprising a material having a fibrous filler is a preferred frictionsensor surface. A friction sensor surface comprising a syntheticpolymeric composition having a fibrous filler is a preferred frictionsensor surface. A friction sensor surface comprising a surface havingmicroasperities is a preferred friction sensor surface. A frictionsensor surface comprising a surface having attached particles is apreferred friction sensor surface and a friction sensor surfacecomprising a surface having attached abrasion resistant particles is amore preferred friction sensor surface. Particles having a hardness ofgreater than the finishing element finishing surface can be preferredfor some applications, particularly those applications having anabrasive free finishing composition. Silica particles are an example ofpreferred abrasion resistant particles and colloidal silica is a morepreferred example of abrasion resistant particles. A friction sensorsurface having particles having a hardness of greater than any abrasiveparticles in the finishing composition is particularly preferred forfinishing wherein a finishing or alternate finishing compositioncontains finishing composition abrasive particles. A friction sensorsurface having a hardness of greater than the finishing elementfinishing surface can be preferred for some applications, particularlythose applications having an abrasive free finishing composition.Particles are preferably quite small. A friction sensor surfacecomprising a surface having microasperities to simulate a workpiecesurface before finishing is a preferred friction sensor surface. Afriction sensor surface comprising a surface having microasperitieswhich sense changes to the finishing element finishing surface is apreferred friction sensor surface. A friction sensor surface comprisinga surface having microasperities which sense changes to finishingelement finishing surface wear is a preferred friction sensor surface. Afriction sensor surface having similar characteristics such as frictionor roughness to materials proximate to the surface of the workpiece ispreferred. Each of these preferred friction sensor surfaces detectfriction which is related to finishing of a workpiece and providesuseful information for controlling the finishing of a workpiece.

A single friction sensor probe having at least one friction sensor ispreferred and a single friction sensor probe having at least twofriction sensors is more preferred for some applications. A singlefriction sensor probe having at least one friction sensor surface ispreferred and a single friction sensor probe having at least twofriction sensor surfaces is more preferred for some applications. Asingle friction sensor surface having at least one proximate frictionsensor is preferred and a single friction sensor surface having at leasttwo proximate friction sensors is more preferred for some applications.Multiple friction sensors can improve precision of the measurements (forinstance in different temperature regions) and multiple frictionsurfaces per friction sensor probe body can sometimes reduce costs byeliminating multiple friction sensor probe bodies where only one isneeded for the specific application. As an example one friction sensorsurface can best measure the friction of the finishing element finishingsurface while the other might best measure the friction of a region inthe operative finishing interface.

FIG. 5 is a artist's drawing of the some of the objects and theirinterconnections in a preferred embodiment of the invention. ReferenceNumeral 20 represents the workpiece being finished. Reference Numeral 24represents the finishing element. Reference Numeral 29 represents thefinishing composition and, optionally, the alternate finishingcomposition. Reference Numeral 40 represents the feed line for thefinishing composition. Reference Numeral 46 represents the feed line forthe alternate finishing composition. Reference Numeral 50 represents thefirst friction sensor probe. Reference numeral 52 represents an optionaldrive mechanism such as a motor or vibrating transducer for the firstfriction sensor probe. Reference Numeral 54 represents the operativeconnection between the first friction sensor probe and the drivemechanism. Reference Numeral 56 represents the second friction sensorprobe. Reference Numeral 200 represents a perpendicular force applied tothe interface between the friction sensor probe and the finishingelement finishing surface. Reference Numeral 202 represents a parallelmotion in the interface between the friction sensor probe and thefinishing element finishing surface. Reference Numeral 200 and ReferenceNumeral 202 are preferred operative friction sensor probe interfacemotions. Reference numeral 58 represents an optional drive mechanismsuch as a motor or vibrating transducer for the second friction sensorprobe. Reference Numeral 60 represents the operative connection betweenthe second friction sensor probe and the drive mechanism. ReferenceNumeral 62 represents the carrier for the workpiece. Reference Numeral64 represents the drive motor carrier for the carrier. Reference Numeral70 represents the platen. Reference Numeral 102 represents preferredoperative sensor connections from the first friction sensor probe,second friction sensor probe, and workpiece finishing assembly to theprocessor (Reference Numeral 104). Preferably the sensor connections areelectrical connections. A data processor is a preferred processor and aelectronic data processor is a more preferred data processor and acomputer is a even more preferred processor. The processor (ReferenceNumeral 104) is preferably connected a controller (Reference Numeral108) with an operative processor to controller connection(s) representedby Reference Numeral 106. The controller is preferably in operativecontrolling connection (Reference Numeral 110) with the first frictionsensor probe, the second friction sensor probe, and the workpiecefinishing sensor subsystem and can adjust finishing control parametersduring finishing the workpiece. An operative electrical connection is apreferred operative connection. An operative electromagnetic wave systemsuch as operative infrared communication connections is anotherpreferred operative connection. The controller can also adjust theoperating friction probe control parameters such as, but not limited to,pressure exerted against the finishing element finishing surface and thefriction probe friction sensor surface and related relative frictionmotion between the finishing element finishing surface and the frictionprobe friction sensor surface such as relative parallel motion.Preferred finishing control parameters are discussed elsewhere herein.

A finishing element finishing surface tends to have a higher frictionthan necessary with the workpiece being finished. The higher frictioncan lead to higher than necessary energy for finishing. The higherfriction can lead to destructive surface forces on the workpiece surfacebeing finished and on the finishing element finishing surface which cancause deleterious surface damage to the workpiece. The higher frictioncan lead to premature wear on the finishing element and even to theabrasive slurry particle wear. This premature wear on the finishingelement and abrasive slurry particles can unnecessarily increase thecost of finishing a workpiece. Further, this higher than necessaryfriction can lead to higher than necessary changes in performance of thefinishing element finishing surface during the finishing of a pluralityof workpieces which makes process control more difficult and/or complex.Applicant currently believes that the higher than desirable defects inthe workpiece surface being finished can at least partially be due tothe fact that the abrasive particles in slurries although generally freeto move about can become trapped in an elastomeric finishing elementsurface thus preventing rolling action and leading to a more fixedscratching type action. Further fixed abrasive finishing elementsurfaces can also scratch or damage of sensitive workpiece surface.Further, abrasive slurry particles which are not lubricated can tend tobecome dull or less effective at finishing the workpiece surface beingfinished which can reduce their effectiveness during finishing. CurrentCMP slurries are generally complex chemical slurries and applicant hasfound confidentially the addition of some new chemicals, such aslubricants, can cause instability over time, precipitation of theabrasive particulates and/or agglomeration of the abrasive particulatesto form large particles which can cause unwanted scratching to theworkpiece surface being finished. Further, precipitation and/oragglomeration of the abrasive slurry particulates can have an adverseimpact on the economical recycling of slurry for finishing workpiecesurfaces by forming the larger particulates which either are notrecycled or must be reprocessed at an increased expense to decreasetheir size to be within specification. Each of the above situations canlead to less than desirable surface quality on the workpiece surfacebeing finished, higher than desirable manufacturing costs, and earlierthan necessary wear on the expensive finishing element finishingsurface. Applicant currently believes that proper choice of a lubricantsupplied to the interface between the finishing surface and theworkpiece surface being finished can help reduce or eliminate damage tothe workpiece surface being finished and also generally help to reduceworkpiece finishing manufacturing costs. Applicant currently believesthat proper choice and supply of a lubricant from the finishing elementto the interface of the workpiece surface being finished and thefinishing element finishing surface can reduce or eliminate the negativeeffects of high friction such as chatter. Applicant currently believesthat proper choice and supply of a lubricant to the interface of theworkpiece surface being finished and the finishing element finishingsurface can extend the useful life of the finishing element finishingsurface by reducing erosive and other wear forces. The lubricant canhelp to maintain the desirable “cutting ability” of the abrasive slurryparticles. The lubricant when transferred from the finishing elementfinishing surface to the interface between the workpiece being finishedand the finishing element finishing surface can help reduce theinstability of the abrasive slurry particulates to lubricants.Transferring the lubricant at the point of use from the finishingelement finishing surface can reduce or prevent negative interactionsbetween the finishing composition or lubricant (and optional abrasiveslurry particles therein). Supplying the lubricant from the finishingelement finishing surface can further reduce the of chatter, microlocalized distortions in the finishing element finishing surface, andalso increases the uniformity of finishing across the surface of theworkpiece surface being finished. Preferably the lubricant is dispersedproximate to the finishing element finishing surface and morepreferably, the lubricant is dispersed substantially uniformly proximateto the finishing element finishing surface. Lubrication reduces thefriction which reduces adverse forces particularly on a high speed beltfinishing element which under high friction can cause belt chatter,localized belt stretching, and/or belt distortions, high tendency toscratch and/or damage workpiece surface being finished. Localized and ormicro localized distortions to the surface of a finishing element andchatter can also occur with other finishing motions and/elements and canhelp to reduce or eliminate these.

Supplying of a lubricant from the finishing element finishing surface tothe interface of the workpiece surface being finished and the finishingelement finishing surface reduces or destroys the effectiveness ofcurrent in situ friction measurement feedback systems known in CMP.Particularly troublesome is changes in friction during finishing due tochanges in type or amount of lubricant. Current known systems, quitesimply, have no effective feedback loop to deal with these changes. Byhaving at least one friction sensor probe to measure the change infriction due to changes in lubricating and/or finishing conditions whilealso having a friction sensor probe to monitor the progress of finishingon the finishing element finishing surface, effective feedback forfinishing of workpieces one can accomplish effective in situ control offinishing. By having at least two friction sensor probes to measure thechanges in friction due to changes in lubricating and/or finishingconditions whilst also having a feedback subsystem to monitor theprogress of finishing on the workpieces one can more effectivelyaccomplish in situ control of finishing. Thus one can more effectivelycontrol, preferably in situ, finishing during changes in lubricantchanges such as composition, concentration, or operating conditionchanges such as applied pressure or operative finishing motion changes.

Supplying an organic boundary lubricant to the operative finishinginterface (located between finishing element finishing surface and theworkpiece surface being finished) can further reduce the of chatter,micro localized distortions in the finishing element finishing surface,and also increases the uniformity of finishing across the surface of theworkpiece surface being finished. Forming the lubricating boundary layerdifferentially can improve local planarity and enhance finishingflexibility as discussed herein. Lubrication reduces abrasive wear tothe abrasive particles and to the finishing element finishing surface byreducing friction forces. Differential boundary lubrication can enhancelocalized finishing rates to improve the semiconductor wafer surface.Supply of a thin lubricating boundary layer is particularly preferred.An effective amount of boundary lubricant often can help meeting aplurality of these advantages simultaneously.

The semiconductor industry is in a relentless journey to increasecomputing power and decrease costs. Finishing of a semiconductor waferusing in situ calculations of cost of manufacture parameters to improvecontrol finishing parameters can help simultaneously to decrease costand reduce unwanted defects. Using current cost of manufactureparameters along with a friction sensing method to evaluate and adjustthe boundary layer lubrication in a manner that adjustably controls thecoefficient of friction in the operative finishing interface can beparticularly effective at reducing unwanted surface defects such asmicroscratches and microchatter. This system is particularly preferredfor finishing with fixed abrasive finishing elements. In additiongenerally helping to improve such parameters as equipment yield,parametric yield, and defect density, the “cuttability” or cut rate ofthe fixed abrasive finishing element can generally be extended whichimproves uptime or equipment utilization. The coefficient of friction inthe operative finishing interface can change any number of times duringa relatively short finishing cycle time making manual calculationsineffective. Further, the semiconductor wafer cost of manufactureparameters are relatively complex to calculate and the finishing processis relatively short thus manual calculations for equipment adjustmentand control are even more difficult and ineffective. Rapid, multipleadjustments of process control parameters using process sensorsoperatively connected to a processor with access to cost of manufactureparameters are particularly preferred for the rapid in situ processcontrol of this invention which helps to increase computing power in thefinished semiconductor wafer and decrease manufacturing costs. Thus onecan more effectively control, preferably in situ, finishing duringchanges in lubricating aid changes (like composition, concentration, oroperating condition changes) and as applied pressure or operativefinishing motion changes by using the systems taught herein. Optimizingthe cost of manufacture during real time with preferred operativefriction sensor(s) information and useful cost of manufactureinformation such as current cost of manufacture information, preferablyderived from individual and/or semiconductor wafer cost trackinginformation during manufacture, can aid in reducing costs on thisrelentless journey. Control of the coefficient of friction in theoperative finishing interface is particularly useful and effective tohelp reduce unwanted surface defects, preferably when combined with realtime cost of manufacture information, information processing capability,and real time finishing control capability.

The new problem recognition of this invention and unique solutionincluding, but not limited to, the new friction sensor subsystems,finishing sensor subsystems, use of cost of manufacture parameters forin situ process control, and the new finishing method of operationdisclosed herein are considered part of the invention.

Finishing Element

A finishing element having a synthetic polymeric body is preferred. Asynthetic polymeric body comprising at least one material selected fromthe group consisting of an organic synthetic polymer, an inorganicpolymer, and combinations thereof is preferred. A preferred example oforganic synthetic polymer is an thermoplastic polymer. Another preferredexample of an organic synthetic polymer is a thermoset polymer. Anorganic synthetic polymeric body comprising organic synthetic polymersincluding materials selected from the group consisting of polyurethanes,polyolefins, polyesters, polyamides, polystyrenes, polycarbonates,polyvinyl chlorides, polyimides, epoxies, chloroprene rubbers, ethylenepropylene elastomers, butyl polymers, polybutadienes, polyisoprenes,EPDM elastomers, and styrene butadiene elastomers is preferred.Preferred stiff finishing surfaces can comprise polyphenylene sulfide,polysulfone, and polyphenylene oxide resins. Phenolic resins can also beused. Polyolefin polymers are particularly preferred for their generallylow cost. A preferred polyolefin polymer is polyethylene. Anotherpreferred polyolefin polymer is a propylene polymer. Another preferredpolyolefin polymer is a ethylene propylene copolymer. Copolymer organicsynthetic polymers are also preferred. Polyurethanes are preferred fortheir inherent flexibility in formulations. A finishing elementcomprising a foamed organic synthetic polymer is particularly preferredbecause of their flexibility and ability to transport the finishingcomposition. A finishing element comprising a foamed polyurethanepolymer is particularly preferred. Foaming agents and processes to foamorganic synthetic polymers are generally known in the art. A finishingelement comprising a compressible porous material is preferred andcomprising a organic synthetic polymer of a compressible porous materialis more preferred.

A finishing element having a body element comprising a mixture of aplurality of organic synthetic polymers can be particularly tough, wearresistant, and useful. An organic synthetic polymeric body comprising aplurality of organic synthetic polymers and wherein the major componentis selected from materials selected from the group consisting ofpolyurethanes, polyolefins, polyesters, polyamides, polystyrenes,polycarbonates, polyvinyl chlorides, polyimides, epoxies, chloroprenerubbers, ethylene propylene elastomers, butyl polymers, polybutadienes,polyisoprenes, EPDM elastomers, and styrene butadiene elastomers ispreferred. Preferred stiff finishing surfaces can comprise polyphenylenesulfide, polysulfone, and polyphenylene oxide resins. Phenolic resinscan also be used. The minor component is preferably also an organicsynthetic polymer and is preferably a modifying and/or toughening agent.A preferred example of an organic synthetic polymer modifier is amaterial which reduces the hardness or flex modulus of the finishingelement body such an polymeric elastomer. A compatibilizing agent canalso be used to improve the physical properties of the polymericmixture. Compatibilizing agents are often also synthetic polymers andhave polar and/or reactive functional groups such as carboxylic acid,maleic anhydride, and epoxy groups. Organic synthetic polymers of theabove descriptions are generally available commercially. Illustrativenonlimiting examples of commercial suppliers of organic syntheticpolymers include Exxon Co., Dow Chemical, Sumitomo Chemical, and BASF.

A finishing element comprising a synthetic polymer composition having aplurality of layers is also preferred. A finishing element comprising atleast one layer of a soft synthetic polymer is preferred. A finishingelement comprising at least one layer of a elastomeric synthetic polymeris preferred. A finishing element comprising at least one layer of athermoset elastomeric synthetic polymer is preferred.

Further illustrative nonlimiting examples of preferred finishingelements for use in the invention are also discussed. A finishingelement having at least a layer of an elastomeric material having aShore A hardness of at least 30 A is preferred. ASTM D 676 is used tomeasure hardness. A porous finishing element is preferred to moreeffectively transfer the polishing slurry to the surface of theworkpiece being finished. A finishing element comprising a syntheticresin material is preferred. A finishing element comprising a thermosetresin material is more preferred. A finishing element having layers ofdifferent compositions is preferred to improve the operative finishingmotion on the workpiece surface being finished. As an example, afinishing element having two layers, one a hard layer and one a softlayer, can better transfer the energy of operative finishing motion tothe workpiece surface being finished than a similar thickness finishingelement of only a very soft layer. A thermoset synthetic resin is lessprone to elastic flow and thus is more stable in this application. Afinishing element which is thin is preferred because it generallytransfers the operative finishing motion to the workpiece surface beingfinished more efficiently. A finishing element having a thickness from0.5 to 0.002 cm is preferred and a thickness from 0.3 to 0.005 cm ismore preferred and a finishing element having a thickness from 0.2 to0.01 cm is even more preferred. Current synthetic resin materials can bemade quite thin now. The minimum thickness will be determined by thefinishing element's integrity and longevity during polishing which willdepend on such parameters as tensile and tear strength. A finishingelement having sufficient strength and tear strength for chemicalmechanical finishing is preferred.

Stabilizing Fillers for Finishing Element

A fibrous filler is a preferred stabilizing filler for the finishingelements of this invention. A plurality of synthetic fibers areparticularly preferred fibrous filler. Fibrous fillers tend to helpgenerate a lower abrasion coefficient and/or stabilize the finishingelement finishing surface from excessive wear. By reducing wear, thefinishing element has improved stability during finishing.

Workpiece

A workpiece needing finishing is preferred. A homogeneous surfacecomposition is a workpiece surface having one composition throughout andis preferred for some applications. A workpiece needing polishing ispreferred. A workpiece needing planarizing is especially preferred. Aworkpiece having a microelectronic surface is preferred. A workpiecesurface having a heterogeneous surface composition is preferred. Aheterogeneous surface composition has different regions with differentcompositions on the surface, further the heterogeneous composition canchange with the distance from the surface. Thus finishing can be usedfor a single workpiece whose surface composition changes as thefinishing process progresses. A workpiece having a microelectronicsurface having both conductive regions and nonconductive regions is morepreferred and is an example of a preferred heterogeneous workpiecesurface. Illustrative examples of conductive regions can be regionshaving copper or tungsten and other known conductors, especiallymetallic conductors. Metallic conductive regions in the workpiecesurface including metals selected from the group consisting of copper,aluminum, and tungsten or combinations thereof are particularlypreferred. A semiconductor device is a preferred workpiece. A substratewafer is a preferred workpiece. A semiconductor wafer having a polymericlayer requiring finishing is preferred because a lubricant can beparticularly helpful in reducing unwanted surface damage to the softerpolymeric surfaces. An example of a preferred polymer is a polyimide.Polyimide polymers are commercially available from E. I. DuPont Co. inWilmington, Del.

This invention is particularly preferred for workpieces requiring ahighly flat surface. Finishing a workpiece surface to meet the specifiedsemiconductor industry circuit design rule is preferred and finishing aworkpiece surface to meet the 0.35 micrometers feature sizesemiconductor design rule is more preferred and finishing a workpiecesurface to meet the 0.25 micrometers feature size semiconductor designrule is even more preferred and finishing a workpiece surface to meetthe 0.18 micrometers semiconductor design rule is even more particularlypreferred. An electronic wafer finished to meet a required surfaceflatness of the wafer device rule in to be used in the manufacture ofULSIs (Ultra Large Scale Integrated Circuits) is a particularlypreferred workpiece made with a method according to preferredembodiments of this invention. The design rules for semiconductors aregenerally known to those skilled in the art. Guidance can also be foundin the “The National Technology Roadmap for Semiconductors” published bySEMATECH in Austin, Tex.

A semiconductor wafer having a diameter of at least 200 mm is preferredand a semiconductor wafer having a diameter of at least 300 mm is morepreferred. A substrate wafer is a preferred workpiece. A computer memorydisk is a preferred substrate. A glass television faceplate is apreferred workpiece. An LCD display is a preferred workpiece. A CRTscreen is a preferred workpiece. Polymer structures, particularlycomprising low dielectric polymers, are a preferred workpiece.Optoelectronic parts are also a preferred workpiece. A flat paneldisplay is a preferred workpiece. Particularly preferred workpiecesinclude flat panel displays, semiconductor wafers, and optoelectronicparts. A workpiece selected from the group consisting of a workpiecehaving heterogeneous regions proximate to its surface is preferred and aworkpiece selected from the group consisting of a workpiece havingdifferent compositions exposed on its surface to be finished is morepreferred.

For finishing of semiconductor wafers having low-k dielectric layers(low dielectric constant layers), finishing aids, more preferablylubricating aids, are preferred. Illustrative nonlimiting examples oflow-k dielectrics are low-k polymeric materials, low-k porous materials,and low-k foam materials. As used herein, a low-k dielectric has at mosta k range of less than 3.5 and more preferably less than 3.0 and evenmore preferably less than 2.5 and even more especially preferred is lessthan 2.0. Illustrative examples include doped oxides, organic polymers,highly fluorinated organic polymers, and porous materials. Low-kdielectric materials are generally known to those skilled in thesemiconductor wafer arts. Abrasive organic synthetic resin particles canbe effective to finishing low-dielectric materials. Abrasive organicsynthetic resin asperities can be effective to finishing low-dielectricmaterials. Multilevel semiconductor wafers such as those having low-kdielectric layers and multilevel metal layers are generally known bythose skilled in the semiconductor arts and U.S. Pat. No. 6,153,833 toDawson et al. is included herein by reference for general non-limitingguidance for those skilled in the art. Since low-k dielectric layersgenerally have lower mechanical strength, the lower coefficient offriction that is offered by organic lubricating boundary layers isparticularly preferred. A semiconductor wafer having a plurality oflow-k dielectric layers is a preferred workpiece and a semiconductorwafer having at least 3 of low-k dielectric layers is a more preferredworkpiece and a semiconductor wafer having at least 5 of low-kdielectric layers is an even more preferred workpiece. Supplying alubricant to a plurality of the low-k dielectric layers during finishingof the same semiconductor wafer is preferred and supplying a lubricantto at least 3 of the low-k dielectric layers during finishing of thesame semiconductor wafer is more preferred and supplying a lubricant toat least 5 of the low-k dielectric layers during finishing of the samesemiconductor wafer is even more preferred. A semiconductor wafer havingat most 10 low-k dielectric layers is currently preferred but in thefuture this can increase. Semiconductor wafers for logic integratedcircuits are particularly preferred. Defects caused during finishing canbe reduced by supplying a lubricant.

A semiconductor wafer having a plurality of metal layers is a preferredworkpiece and a semiconductor wafer having at least 3 of metal layers isa more preferred workpiece and a semiconductor wafer having at least 5of metal layers is an even more preferred workpiece. A semiconductorwafer having at most 10 metal layers is currently preferred but in thefuture this will increase. A semiconductor wafer having logic chips orlogic die is particularly preferred because they can have multiple metallayers for supplying lubricants such as preferred lubricants duringfinishing. Supplying a lubricant to a plurality of finishing layers ofthe same semiconductor wafer is preferred and supplying a lubricant toat least 3 of finishing layers of the same semiconductor wafer is morepreferred and supplying a lubricant to at least 5 of finishing layers ofthe same semiconductor wafer is more preferred. Defects caused duringfinishing can be reduced by supplying a lubricant. Semiconductor wafershaving a plurality of metal layers or dielectric layers are generallyknown to those skilled in the semiconductor wafer arts and U.S. Pat.Nos. 5,516,346 to Cadien et al. and 5,836,806 to Cadien et al. areincluded herein in their entirety for general illustrative guidance.Further, defects in the first finished layer can cause defects in thesecond finished layer (and so on). Thus by supplying a lubricant duringfinishing, one can improve yields by minimizing unwanted defects in boththe current and subsequent layers. A method which updates the cost ofmanufacture control parameters, look-up tables, algorithms, or controllogic consistent with the current manufacturing step is preferred. Amethod which updates the cost of manufacture control parameters, look-uptables, algorithms, or control logic consistent with the currentmanufacturing step while evaluating prior manufacturing steps (such ascompleted manufacturing steps) is preferred. A method which updates thecost of manufacture control parameters, look-up tables, algorithms, orcontrol logic consistent with the current manufacturing step whileevaluating future manufacturing steps is preferred. A method whichupdates the cost of manufacture control parameters, look-up tables,algorithms, or control logic consistent with the current manufacturingstep while evaluating both prior and future manufacturing steps is morepreferred. The semiconductor wafer can be tracked for each finishingstep during processing with a tracking means such as tracking code. Asan illustrative example, a semiconductor wafer can be assigned with atrackable UPC code. U.S. Pat. No. 5,537,325 issued to Iwakiri, et al.,on Jul. 16, 1997 teaches a method to mark and track semiconductor waferssliced from an ingot through the manufacturing process and is includedfor by reference in its entirety for general guidance and appropriatemodification by those skilled in the art. As a nonlimiting example,Cognex Corporation in Natick, Mass. markets commercial tacking means fortracking semiconductor wafers. As further illustration of preferredtracking codes include 2D matrix (such as SEMI 2D matrix), alphanumeric,and bar codes. Processes, performance, and preferred lubricationconditions and information can be tracked and stored by wafer (and/orwafer batches) with this technology when used with the new disclosuresherein.

Finishing Composition

Finishing compositions such as CMP slurries are generally known forfinishing workpieces. A chemical mechanical polishing slurry is anexample of a preferred finishing composition. Finishing compositionshave their pH adjusted carefully, and generally comprise other chemicaladditives are used to effect chemical reactions and/other surfacechanges to the workpiece. A finishing composition having dissolvedchemical additives is particularly preferred. Finishing compositionshaving small abrasive particles in a slurry are also preferred arepreferred for many applications. Illustrative preferred examples includedissolved chemical additives include dissolved acids, bases, buffers,oxidizing agents, reducing agents, stabilizers, and chemical reagents. Afinishing composition having a chemical which substantially reacts withmaterial from the workpiece surface being finished is particularlypreferred. A finishing composition chemical which selectively chemicallyreacts with only a portion of the workpiece surface is particularlypreferred. A finishing composition having a chemical whichpreferentially chemically reacts with only a portion of the workpiecesurface is particularly preferred.

Some illustrative nonlimiting examples of polishing slurries which canbe used and/or modified by those skilled in the art are now discussed.An example slurry comprises water, a solid abrasive material and a thirdcomponent selected from the group consisting of HNO₃, H₂SO₄, and AgNO₃or mixtures thereof. Another polishing slurry comprises water, aluminumoxide, and hydrogen peroxide mixed into a slurry. Other chemicals suchas KOH or potassium hydroxide can also be added to the above polishingslurry. Still another illustrative polishing slurry comprises H₃PO₄ atfrom about 0.1% to about 20% by volume, H₂O₂ at from 1% to about 30% byvolume, water, and solid abrasive material. Still another polishingslurry comprises an oxidizing agent such as potassium ferricyanide, anabrasive such as silica, and has a pH of between 2 and 4. Still anotherpolishing slurry comprises high purity fine metal oxides particlesuniformly dispersed in a stable aqueous medium. Still another polishingslurry comprises a colloidal suspension of SiO₂ particles having anaverage particle size of between 20 and 50 nanometers in alkalisolution, demineralized water, and a chemical activator. U.S. Pat. Nos.5,209,816 to Yu et. al. issued in 1993, 5,354,490 to Yu et. al. issuedin 1994, 5,540,810 to Sandhu et. al. issued in 1996, 5,516,346 to Cadienet. al. issued in 1996, 5,527,423 to Neville et. al. issued in 1996,5,622,525 to Haisma et. al. issued in 1997, and 5,645,736 to Allmanissued in 1997 comprise illustrative nonlimiting examples of slurriescontained herein for further general guidance and modification by thoseskilled in the arts. Commercial CMP polishing slurries are alsoavailable from Rodel Manufacturing Company in Newark, Del.

Lubricant

Supplying an effective amount of a lubricant which reduces thecoefficient of friction between the finishing element finishing surfaceand the workpiece surface being finished is preferred. Supplying aneffective amount of a lubricant which reduces the unwanted surfacedamage to the surface of the workpiece being finished during finishingis preferred. Supplying an effective amount of a lubricant whichdifferentially lubricates different regions of the work piece andreduces the unwanted surface damage to at least a portion of the surfaceof the workpiece being finished during finishing is preferred.

The lubricant can help reduce the formation of surface defects for highprecision part finishing. Fluid based a lubricant can be incorporated inthe finishing element finishing surface. A method of finishing whichadds an effective amount of fluid based lubricant to the interfacebetween the finishing element finishing surface and workpiece surfacebeing finished is preferred. A preferred effective amount of fluid basedlubricating reduces the occurrence of unwanted surface defects. Apreferred effective amount of fluid based lubricant can reduce thecoefficient of friction between the work piece surface being finishedand the finishing element finishing surface.

A lubricant which is water soluble is preferred for many applications. Alubricant which has a different solubility in water at differenttemperatures is more preferred. A degradable lubricant is also preferredand a biodegradable lubricant is even more preferred. An environmentallyfriendly lubricant is particularly preferred.

Certain particularly important workpieces in the semiconductor industryhave regions of high conductivity and regions of low conductivity. Thehigher conductivity regions are often comprised of metallic materialssuch as tungsten, copper, aluminum, and the like. An illustrativeexample of a common lower conductivity region is silicon or siliconoxide. A lubricant which differentially lubricates the two regions ispreferred and a lubricant which substantially lubricates two regions ismore preferred. An example of a differential lubricant is if thecoefficient of friction is changed by different amounts in one regionversus the other region during finishing. An example of differentiallubrication is where the boundary lubricant reacts differently withdifferent chemical compositions to create regions having different localregions of tangential friction force and different coefficients offriction. Another example is where the semiconductor surface beingfinished topography (for instance unwanted raised regions) interactwithin the operative finishing interface to create local regions havingdifferent tangential friction forces and different coefficients offriction. For instance one region (or area) can have the coefficient offriction reduced by 20% and the other region (or area) reduced by 40%.This differential change in lubrication can be used to help indifferential finishing of the two regions. An example of differentialfinishing is a differential finishing rate between the two regions. Forexample, a first region can have a finishing rate of “X”angstroms/minute and a second region can have a finishing rate of “Y”angstroms per minute before lubrication and after differentiallubrication, the first region can have a finishing rate of 80% of “X”and the second region can have a finishing rate of 60% of “Y”. Differentregions can have different lubricating boundary layer thicknesses. Anexample of where this will occur is when the lubricant tends to adhereto one region because of physical or chemical surface interactions (suchas a metallic conductive region) and not adhere or not adhere as tightlyto the an other region (such as a non metallic, non conductive region).Changing the finishing control parameters to change the differentiallubrication during finishing of the workpiece is a preferred method offinishing. Changing the finishing control parameters to change thedifferential lubrication during finishing of the workpiece which in turnchanges the regional finishing rates in the workpiece is a morepreferred method of finishing. Changing the finishing control parameterswith in situ process control to change the differential lubricationduring finishing of the workpiece which in turn changes the regionfinishing rates in the workpiece is an even more preferred method offinishing. The friction sensor probes play an important role indetecting and controlling differential lubrication in the workpieceshaving heterogeneous surface compositions needing finishing.

A lubricant comprising a reactive lubricant is preferred. A lubricantcomprising a boundary lubricant is also preferred. A lubricatingboundary layer is particularly preferred. A preferred reactive lubricantis a lubricant which chemically reacts with the workpiece surface beingfinished. A lubricant free of sodium is a preferred lubricant. As usedherein a lubricant free of sodium means that the sodium content is belowthe threshold value of sodium which will adversely impact theperformance of a semiconductor wafer or semiconductor parts madetherefrom. A boundary layer lubricant is a preferred example of alubricant which can form a lubricating film on the surface of theworkpiece surface. As used herein a boundary lubricant is a thin layeron one or more surfaces which prevents or at least limits, the formationof strong adhesive forces between the workpiece being finished and thefinishing element finishing surface and therefore limiting potentiallydamaging friction junctions between the workpiece surface being finishedand the finishing element finishing surface. A boundary layer film has acomparatively low shear strength in tangential loading which reduces thetangential force of friction between the workpiece being finished andthe finishing element finishing surface which can reduce surface damageto the workpiece being finished. In other words, a lubricating boundarylayer is lubrication in which friction between two surfaces in relativemotion, such as the workpiece surface being finished and the finishingelement finishing surface, is determined by the properties of thesurfaces, and by the properties of the lubricant other than theviscosity. A boundary film generally forms a thin film, perhaps evenseveral molecules thick, and the boundary film formation depends on thephysical and chemical interactions with the surface. A boundarylubricant which forms of thin film is preferred. A boundary lubricantforming a film having a thickness from 1 to 10 molecules thick ispreferred and a boundary lubricant forming a film having a thicknessfrom 1 to 6 molecules thick is more preferred and a boundary lubricantforming a film having a thickness from 1 to 4 molecules thick is evenmore preferred. A boundary lubricant forming a film having a thicknessfrom 1 to 10 molecules thick on at least a portion of the workpiecesurface being finished is particularly preferred and a boundarylubricant forming a film having a thickness from 1 to 6 molecules thickon at least a portion of the workpiece surface being finished is moreparticularly preferred and a boundary lubricant forming a film having athickness from 1 to 4 molecules thick on at least a portion of theworkpiece surface being finished is even more particularly preferred. Aboundary lubricant forming a film having a thickness of at most 10molecules thick on at least a portion of the workpiece surface beingfinished is particularly preferred and a boundary lubricant forming afilm having a thickness of at most 6 molecules thick on at least aportion of the workpiece surface being finished is more particularlypreferred and a boundary lubricant forming a film having a thickness ofat most 4 molecules thick on at least a portion of the workpiece surfacebeing finished is even more particularly preferred. An operative motionwhich continues in a substantially uniform direction can improveboundary layer formation and lubrication. A discontinuous operativemotion can be used to change the lubricating boundary layer. Frictionsensor subsystems and finishing sensor subsystems having the ability tocontrol the friction probe motions and workpiece motions are preferredand uniquely able to improve finishing in many real time lubricationchanges to the operative finishing interface. Boundary lubricants,because of the small amount of required lubricant, are particularlyeffective lubricants for inclusion in finishing elements. The molecularthickness of lubricating boundary layers can be measured with generallyknown frictional force measures and/or energy change sensors discussedherein. Changing the pressure in the operative finishing interfaceand/or in the secondary friction sensor interface can be used todetermine molecular thickness. Controls can also be used by usingvarious generally known analytical techniques such as spectroscopy andthese results used to calibrate target energy change sensors andfrictional force measures. Thermal analysis can also be used to measurethe quantity of organic boundary layer on a surface and then thethickness calculated. Thermal analysis can be used to determine theefficacy of a particular lubricating boundary layer including solidboundary lubricant zone, boundary liquid lubricant zone, and boundarylubricant desorbed zone and the transition temperatures therebetween.

Changing the lubrication at least once during the finishing cycle timeto change the coefficient of friction between the finishing elementfinishing surface and the workpiece surface being finished is preferred.Changing the lubrication a plurality of times during the finishing cycletime to change the coefficient of friction between the finishing elementfinishing surface and the workpiece surface being finished a pluralityof times during the finishing cycle time is more preferred. Changing theamount of lubricant at the operative finishing interface is a preferredmethod to change the lubrication. Changing the composition of thelubricant at the operative finishing interface is a preferred method tochange the lubrication. Changing the number of lubricants in theoperative finishing interface is a preferred method to change thelubrication. Changing the number of organic lubricating boundary layersin the operative finishing interface is a preferred method to change thelubrication. Changing the composition of organic lubricating boundarylayer(s) at the operative finishing interface is a preferred method tochange the lubrication.

Operative Finishing Motion

Chemical mechanical finishing during operation has the finishing elementin operative finishing motion with the surface of the workpiece beingfinished. A relative lateral parallel motion of the finishing element tothe surface of the workpiece being finished is an operative finishingmotion. Lateral parallel motion can be over very short distances ormacro-distances. A parallel circular motion of the finishing elementfinishing surface relative to the workpiece surface being finished canbe effective. A tangential finishing motion can also be preferred. U.S.Pat. Nos. 5,177,908 to Tuttle issued in 1993, 5,234,867 to Schultz et.al. issued in 1993, 5,522,965 to Chisholm et. al. issued in 1996,5,735,731 to Lee in 1998, and 5,962,947 to Talieh issued in 1997comprise illustrative nonlimiting examples of operative finishing motioncontained herein for further general guidance of those skilled in thearts.

Some illustrative nonlimiting examples of preferred operative finishingmotions for use in the invention are also discussed. This invention hassome particularly preferred operative finishing motions of the workpiecesurface being finished and the finishing element finishing surface.Moving the finishing element finishing surface in an operative finishingmotion to the workpiece surface being finished is a preferred example ofan operative finishing motion. Moving the workpiece surface beingfinished in an operative finishing motion to the finishing elementfinishing surface is a preferred example of an operative finishingmotion. Moving the finishing element finishing surface in a parallelcircular motion to the workpiece surface being finished is a preferredexample of an operative finishing motion. Moving the workpiece surfacebeing finished in a parallel circular motion to the finishing elementfinishing surface is a preferred example of an operative parallelmotion. Moving the finishing element finishing surface in a parallellinear motion to the workpiece surface being finished is a preferredexample of an operative finishing motion. Moving the workpiece surfacebeing finished in a parallel linear motion to the finishing elementfinishing surface is a preferred example of an operative parallel. Theoperative finishing motion performs a significant amount of thepolishing and planarizing in this invention.

High speed finishing of the workpiece surface with finishing elementscan cause surface defects in the workpiece surface being finished athigher than desirable rates because of the higher forces generated. Asused herein, high speed finishing involves relative operative motionhaving an equivalent linear velocity of greater than 300 feet per minuteand low speed finishing involves relative operative motion having anequivalent linear velocity of at most 300 feet per minute. The relativeoperative speed is measured between the finishing element finishingsurface and the workpiece surface being finished. Supplying a lubricantbetween the interface of finishing element finishing surface and theworkpiece surface being finished when high speed finishing is preferredto reduce the level of surface defects. Supplying a lubricant betweenthe interface of a cylindrical finishing element and a workpiece surfacebeing finished is a preferred example of high speed finishing. Supplyinga lubricant between the interface of a belt finishing element and aworkpiece surface being finished is a preferred example of high speedfinishing. Nonlimiting illustrative examples of a belt finishing elementand a cylindrical finishing element are found in patents U.S. Pat. No.5,735,731 to Lee and U.S. Pat. No. 5,762,536 to Pant and which can bemodified by those skilled in the art as appropriate. U.S. Pat. No.5,735,731 to Lee and U.S. Pat. No. 5,762,536 to Pant are included hereinby reference in their entirety.

Friction Sensor Probe

A friction sensor probe to facilitate measurement and control offinishing in this invention is preferred. A secondary friction detectorcomprises a probe that can sense friction at the interface between amaterial which is separated from the workpiece surface being finished. Apreferred secondary friction sensor comprises a friction sensor probe. Afriction sensor probe comprises a probe that can sense friction at theinterface between a material which is separate and unconnected to theworkpiece surface being finished and the finishing element finishingsurface. A friction sensor probe having a friction sensor surface inoperative friction motion with the finishing element finishing surfaceis particularly preferred. A friction sensor surface comprising amaterial which comprises the same material contained in the workpiece ispreferred and which comprises the same a material selected from theproximate surface of the workpiece is more preferred and which comprisesa material selected from the surface of the workpiece is even morepreferred. Friction sensor surface comprising a material which reacts ina similar manner with the lubricant as a material contained in theworkpiece is preferred and which reacts a similar manner with thelubricant as a material selected the same as a material selected fromthe proximate surface of the workpiece is more preferred and whichreacts a similar manner with the lubricant as a material selected amaterial selected from the surface of the workpiece is even morepreferred.

A preferred control subsystem comprises at least one operative sensor,at least one processor, and at least one controller. A friction sensorsubsystem is a preferred nonlimiting example of a control subsystem. Afriction sensor subsystem as used herein is the combination of thefriction sensor probe operatively connected to a processor and acontroller which is capable of controlling the finishing controlparameters and the friction sensing control parameters. Preferredembodiments of a friction sensor system have been discussed herein. Apreferred controller subsystem has access to cost of manufactureparameters, preferably useful cost of manufacture parameters, and evenmore preferably trackable and useful cost of manufacture parameters. Apreferred friction sensor subsystem has access to cost of manufactureparameters, preferably useful cost of manufacture parameters, and evenmore preferably trackable and useful cost of manufacture parameters. Apreferred example of generally useful cost of manufacture information iscurrent cost of manufacture information which has been tracked and morepreferably updated using generally known activity based accountingtechniques. Another preferred example of useful cost of manufactureparameters is the cost of manufacture of manufacturing steps whichpreceded the current finishing step such as prior finishing steps,metallization steps, or interlayer dielectric steps. Another preferredexample of useful cost of manufacture parameters is the cost ofmanufacture of manufacturing steps which occur after the currentfinishing step such as later finishing steps, metallization steps, orinterlayer dielectric steps. The current finishing step can affect thecost of manufacture of a later step because some defects such generallypoor planarity can adversely impact latter manufacturing step costs suchas by negativity impacting latter step yields. A preferred frictionsensor subsystem has access to cost of manufacture parameters,preferably current cost of manufacture parameters, and even morepreferably trackable cost of manufacture parameters. Non-limitingfriction control parameters include the operative friction motion,temperature, and finishing composition type and feed rate. Non-limitingpreferred operative friction sensor motions include relative motionbetween the finishing element finishing surface and the friction sensorsurface including velocity, continuous or periodic, and appliedpressure. Still further examples of friction sensor motions includecircular, tangential, linear, orbital, repetitive, and intermittentmotions. A vibrating friction sensor motion is a preferred frictionsensor motion for some applications. Mechanical mechanisms to delivereffect these operative friction sensor motions are well understood bythose skilled in the art are not repeated herein. Electric motors andelectric stepper motors are generally known in the industry for drivinga mechanical mechanism. Guidance can also be found in mechanicalmechanisms used for the carrier motions known in the general CMPindustry and adapted for use with a friction sensor probe(s).

A friction sensor subsystem which uses processor which uses at least inpart a mathematical equation to aid control is preferred. A mathematicalequation developed from laboratory experience, semiworks experience,test wafer experience, and/or actual production can be preferred. Curvefitting to determine mathematical equations based on laboratoryexperience, semiworks experience, test wafer experience, and/or actualproduction are generally known to those skilled in the semiconductorarts. Mathematical equations can be used also generally forinterpolation and extrapolation. Multiple mathematical equations withmultiple unknowns can be solved or resolved in real time for improvedprocess control with a processor. Differential information from multipleworkpiece sensors and/or friction sensors can generally be used toimprove real time (in situ) control with a processor. A lubricationcontrol subsystem, a friction sensor subsystem, a finishing controlsubsystem, and a control subsystem can generally use mathematicalequations to aid control. A friction sensor subsystem having at leastone friction sensors is preferred and having at least two frictionsensors is more preferred. A friction sensor subsystem having at leastone friction sensor probe is preferred and having at least two frictionsensor probes is more preferred. A friction sensor subsystem having atleast two friction sensor probes and which uses processor which uses atleast in part a mathematical equation to extrapolate from theinformation from the two probes is also more preferred. A frictionsensor subsystem having at least two friction sensor probes and whichuses processor which uses at least in part a mathematical equation tointerpolate between the range of information derived from the two probesduring the finishing cycle time is more preferred. A friction sensorsubsystem having at least two friction sensor probes and which usesprocessor which uses at least in part a mathematical equation tointerpolate between the information from the two probes at a particulartime during the cycle time is more particularly preferred. Controllingfinishing with current information from the friction sensor probes forinterpolations are often more effective and precise than historicalpredictions, particularly when the finishing element finishing surfacechanges with time. Controlling finishing with current information fromthe friction sensor probes for extrapolations are often more effectiveand precise than historical predictions, particularly when the finishingelement finishing surface changes with time.

Secondary friction detectors can be used to sense changes in frictionand tangential friction forces. Some illustrative secondary frictionsensor motions are pulsed direction changes, pulsed pressure changes,continuous motion such as circular, elliptical, and linear. An operativesecondary friction sensor motion is an operative secondary frictionsensor motion between the secondary friction sensor surface and thefinishing element finishing surface. An absolute motion of the secondaryfriction sensor is preferred.

Workpiece Finishing Sensor

A workpiece finishing sensor is a sensor which senses the finishingprogress to the workpiece in real time so that an in situ signal can begenerated. A workpiece finishing sensor is preferred. A workpiecefinishing sensor which facilitates measurement and control of finishingin this invention is preferred. A workpiece finishing sensor probe whichgenerates a signal which can be used cooperatively with the frictionsensor signal to improve finishing is more preferred.

The change in friction during finishing can be accomplished usingtechnology generally familiar to those skilled in the art. A change infriction can be detected by rotating the workpiece being finished andthe finishing element finishing surface with electric motors andmeasuring current changes on one or both motors. The current changesrelated to friction changes can then be used to produce a signal tooperate the finishing control subsystem. A change in friction can bedetected by rotating the workpiece finishing surface with the finishingelement finishing surface with electric motors and measuring powerchanges on one or both motors. Changes in friction can also be measuredwith thermal sensors. A thermistor is a non-limiting example ofpreferred non-optical thermal sensor. A thermal couple is anotherpreferred non-optical thermal sensor. An optical thermal sensor is apreferred thermal sensor. A infrared thermal sensor is a preferredthermal sensor. A sensors to measure friction in workpieces beingfinished are generally known to those skilled in the art. Non limitingexamples methods to measure friction in friction sensor probes aredescribed in the following U.S. Pat. Nos. 5,069,002 to Sandhu et. al.,5,196,353 to Sandhu, 5,308,438 to Cote et. al., 5,595,562 to Yau et.al., 5,597,442 to Chen, 564,050 to Chen, and 5,738,562 to Doan et. al.and are included by reference herein in their entirety for guidance andcan be advantageously modified by those skilled in the art for use inthis invention. Thermal sensors are available commercially from TerraUniversal, Inc. in Anaheim, Calif. and Hart Scientific in American Fork,Utah. Measuring the changes in friction at the interface between theworkpiece being finished and the finishing element finishing surface togenerate an in situ signal for control is particularly preferred becausethe it can be effectively combined with at least one friction sensorprobes to this invention to improve finishing control.

A workpiece finishing sensor for the workpiece being finished ispreferred. A sensor for the workpiece being finished selected from thegroup consisting of friction sensors, thermal sensors, optical sensors,acoustical sensors, and electrical sensors are preferred sensors for theworkpiece being finished in this invention. Workpiece thermal sensorsand workpiece friction sensors are non-limiting examples of preferredworkpiece friction sensors. As used herein, a workpiece friction sensorsurface can sense the friction between the interface of the workpiecebeing finished and the finishing element finishing surface duringoperative finishing motion.

Additional non-limiting preferred examples of workpiece sensors will nowbe discussed. Preferred optical workpiece sensors are discussed.Preferred non-optical workpiece sensors are also discussed. The endpointfor planarization can be effected by monitoring the ratio of the rate ofinsulator material removed over a particular pattern feature to the rateof insulator material removal over an area devoid of an underlyingpattern. The endpoint can detected by impinging a laser light onto theworkpiece being polished and measuring the reflected light versus theexpected reflected light as an measure of the planarization process. Asystem which includes a device for measuring the electrochemicalpotential of the slurry during processing which is electricallyconnected to the slurry, and a device for detecting the endpoint of theprocess, based on upon the electrochemical potential of the slurry,which is responsive to the electrochemical potential measuring device.Endpoint detection can be determined by an apparatus using aninterferometer measuring device to direct at an unpatterned die on theexposed surface of the wafer to detect oxide thickness at that point. Asemiconductor substrate and a block of optical quartz are simultaneouslypolished and an interferometer, in conjunction with a data processingsystem are then used to monitor the thickness and the polishing rate ofthe optical block to develop an endpoint detection method. A layer overa patterned semiconductor is polished and analyzed using optical methodsto determine the end point. An energy supplying means for supplyingprescribed energy to the semiconductor wafer are used to develop adetecting means for detecting a polishing end point tot the polishing offilm by detecting a variation of the energy supplied tot thesemiconductor wafer. The use of sound waves can be used during chemicalmechanical polishing by measuring sound waves emanating from thechemical mechanical polishing action of the substrate against thefinishing element. A control subsystem can maintain a wafer count,corresponding to how many wafers are finished and the control subsystemregulates the backside pressure applied to each wafer in accordance witha predetermined function such that the backside pressure increasesmonotonically as the wafer count increases. The above methods aregenerally known to those skilled in the art. U.S. Pat. Nos. 5,081,796 toSchultz, 5,439,551 to Meikle et al., 5,461,007 to Kobayashi, 5,413,941to Koos et. al., 5,637,185 Murarka et al., 5,643,046 Katakabe et al.,5,643,060 to Sandhu et al., 5,653,622 to Drill et al., and 5,705,435 toChen. are included by reference in their entirety and included hereinfor general guidance and modification by those skilled in the art.

Changes in lubrication, particularly active lubrication, at theoperative finishing interface can significantly affect finishing ratesand finishing performance in ways that current workpiece sensors cannothandle as effectively as desired. For instance, current workpiecesensors are less effective to adequately monitor and control real timechanges in lubrication, particularly active lubrication, and changes infinishing such as finishing rates. This renders prior art workpiecesensors less effective for lubricating boundary layer for controllingand stopping finishing where friction is adjusted or changed in realtime. In marked contrast to the prior art, the friction sensorsubsystems and finishing sensor subsystems of this invention can detectand control both the friction detectors and the active lubrication atthe operative finishing interface to improve real time finishing controlduring finishing and detecting the end point of finishing. Where thematerial changes with depth during the finishing of workpiece beingfinished, one can monitor friction changes in the friction sensor probeshaving dissimilar materials even with active lubrication and thereforereadily detect the end point. As an additional example, the finishingrate can be correlated with the instantaneous lubrication at theoperative finishing interface, a mathematical equation can be developedto monitor finishing rate with instantaneous lubrication informationfrom the friction sensor probes, and the processor then in real timecalculates finishing rates and indicates the end point to thecontroller.

Platen

The platen is generally a stiff support structure for the finishingelement. The platen surface facing the workpiece surface being finishedis parallel to the workpiece surface being planarized and is flat andgenerally made of metal. The platen reduces flexing of the finishingelement by supporting the finishing element, optionally a pressuredistributive element can also be used. The platen surface duringpolishing is in operative finishing motion to the workpiece surfacebeing finished. The platen surface can be static while the workpiecesurface being finished is moved in an operative finishing motion. Theplaten surface can be moved in a parallel motion fashion while theworkpiece surface being finished is static. Optionally, both the platensurface and the workpiece being finished can be in motion in a way thatcreates operative finishing motion between the workpiece and thefinishing element. Other types of platens are generally known in theindustry and functional. A finishing element support mechanism isgenerally used for finishing.

Base Support Structure

The base support structure forms structure which can indirectly aid inapplying pressure to the workpiece surface being finished. It generallyforms a support surface for those members attached to it directly oroperatively connected to the base support structure. Other types of basesupport structure are generally known in the industry and functional.

Finishing Element Conditioning

A finishing element can be conditioned before use or between thefinishing of workpieces. Conditioning a finishing element is generallyknown in the CMP field and generally comprises changing the finishingelement finishing surface in a way to improve the finishing of theworkpiece. As an example of conditioning, a finishing element having nobasic ability or inadequate ability to absorb or transport a finishingcomposition can be modified with an abrasive finishing elementconditioner to have a new texture and/or surface topography to absorband transport the finishing composition. As a non-limiting preferredexample, an abrasive finishing element conditioner having a mechanicalmechanism to create a finishing element finishing surface which moreeffectively transports the finishing composition is preferred. Theabrasive finishing element conditioner having a mechanical mechanism tocreate a finishing element finishing surface which more effectivelyabsorbs the finishing composition is also preferred. A abrasivefinishing element conditioner having mechanical mechanism comprising aplurality of abrasive points which through controlled abrasion canmodify the texture or surface topography of a finishing elementfinishing surface to improve finishing composition absorption and/ortransport is preferred. An abrasive finishing element conditioner havinga mechanical mechanism comprising a plurality of abrasive pointscomprising a plurality of diamonds which through controlled abrasion canmodify the texture and/or surface topography of a finishing elementfinishing surface to improve finishing composition absorption and/ortransport is preferred.

Modifying a virgin finishing element finishing surface with a finishingelement conditioner before use is generally preferred. Modifying afinishing element finishing surface with a finishing element conditionera plurality of times is also preferred. conditioning a virgin finishingelement finishing surface can improve early finishing performance of thefinishing element such as by exposing the lubricants. Modifying afinishing element finishing surface with a finishing element conditionera plurality of times during it useful life in order to improve thefinishing element finishing surface performance over the finishing cycletime by exposing new, unused lubricant, particularly new lubricantparticles, is preferred. Conditioning a finishing element finishingsurface a plurality of times during it useful life can keep thefinishing element finishing surface performance higher over its usefullifetime by exposing fresh lubricant particles to improve finishingperformance is also preferred. Conditioning a finishing surface bycleaning is preferred. Nondestructive conditioning is a preferred formof conditioning. Using feedback information, preferably informationderived from sensors, preferably friction sensor probes, to select whento modify the finishing element finishing surface with the finishingelement conditioner is preferred. Using feedback information, preferablyinformation derived from a friction sensor probe, to optimize the methodof modifying the finishing element finishing surface with the finishingelement conditioner is more preferred. Use of feedback information isdiscussed further herein in other sections. When using a fixed abrasivefinishing element, a finishing element having three dimensionallydispersed lubricants is preferred because during the finishing elementconditioning process, material is often mechanically removed from thefinishing element finishing surface and preferably this removal exposesfresh lubricants, particularly lubricant particulates, to improvefinishing.

Nonlimiting examples of textures and topographies useful for improvingtransport and absorption of the finishing composition and/or finishingelement conditioners and general use are given in U.S. Pat. Nos.5,216,843 to Breivogel, 5,209,760 to Wiand, 5,489,233 to Cook et. al.,5,664,987 to Renteln, 5,655,951 to Meikle et. al., 5,665,201 to Sahota,and 5,782,675 to Southwick and are included herein by reference in theirentirety for general background and guidance and modification by thoseskilled in the art.

Cleaning Composition

After finishing the workpiece such as a electronic wafer, the workpieceis generally carefully cleaned before the next manufacturing processstep. A lubricant or abrasive particles remaining on the finishedworkpiece can cause quality problems later on and yield losses.

A lubricant which can be removed from the finished workpiece surface bysupplying a water composition to the finished workpiece is preferred anda lubricant which can be removed from the finished workpiece surface bysupplying a hot water composition to the finished workpiece is alsopreferred. An example of a water composition for cleaning is a watersolution comprising water soluble surfactants. An effective amount oflubricant which lowers the surface tension of water to help cleanabrasive and other adventitious material from the workpiece surfaceafter finishing is particularly preferred.

A lubricant which can be removed from the finished workpiece surface bysupplying pure water to the finished workpiece to substantially removeall of the lubricant is preferred and a lubricant which can be removedfrom the finished workpiece surface by supplying hot pure water to thefinished workpiece to substantially remove all of the lubricant is alsopreferred. A lubricant which can be removed from the finished workpiecesurface by supplying a pure water to the finished workpiece tocompletely remove the lubricant is more preferred and a lubricant whichcan be removed from the finished workpiece surface by supplying hot purewater to the finished workpiece in to completely remove the lubricant isalso more preferred. A preferred form of pure water is deionized water.Supplying a cleaning composition having a surfactant which removeslubricant from the workpiece surface just polished is a preferredcleaning step. A lubricant which lowers the surface tension of the waterand thus helps remove any particles from the finished workpiece surfaceis preferred.

By using water to remove lubricant, the cleaning steps are lower costand generally less apt to contaminate other areas of the manufacturingsteps. A water cleaning based process is generally compatible with manyelectronic wafer cleaning process and thus is easier to implement on acommercial scale.

Cost of Manufacture Information

Cost of manufacture parameters for chemical mechanical finishing arevery complex. To applicant's knowledge, because of their complexity theyhave not been used for in situ process improvement. Applicant has nowfound unexpectedly that cost of manufacture parameters can be used toadvantage to improve both finishing control and cost of manufactureduring real-time finishing. Particular cost of manufacture parametersare preferred because they have a large impact on efficiency andeffectiveness of chemical mechanical finishing as well as the properselection of improved process control parameters and their selectedvalues. A preferred cost of manufacture parameter is the defect density.FIG. 6 illustrates the effect of defect density on the cost ofmanufacture for a particular semiconductor wafer (finished wafer valuedof $500). Note that an increase of defect density from 0.01 to 0.03 canincrease the cost of manufacture for finishing by about $1.50. Anotherpreferred cost of manufacture parameter is equipment yield. FIG. 7illustrates the effect of a decrease of 1% in equipment yield canincrease the cost of manufacture by $2.50 (in process wafer valued of$250). Another preferred cost of manufacture parameter for in situprocess control is the parametric yield. FIG. 8 illustrates the effectof a decrease of 1% in parametric yield which can increase the cost ofmanufacture by $5.00 (finished wafer valued of $500). Another preferredcost of manufacture parameter for in situ process control is thefinishing rate. FIG. 9 illustrates the effect of a finishing rateimprovement on the cost of manufacture. It is also important to notethat depending on the particular finishing conditions, an increase infinishing rate can have a lowering effect on cost of manufacture due toan increase in throughput and can simultaneously increase the cost ofmanufacture by increasing the yield loss due to increased defectdensity. By using a processor, appropriate calculations can be made insitu to improve cost of manufacture in real-time. Without the processorand the ready access to preferred cost of manufacture information asillustrated by cost of manufacture parameters, it is difficult toproperly improve the process control parameters during real-timefinishing. Cost of manufacture information, cost of manufactureparameters and Cost of Ownership metrics are generally known by thoseskilled in the semiconductor arts. Some preferred examples of cost ofmanufacture information such as cost of manufacture parameters compriseat least one parameter(s) selected from the group consisting ofequipment cost ($), spares cost ($), consumables costs (such asabrasives, slurry, and/or finishing elements in $), MTBF (mean timebetween failure in hours), MTTR (mean time to repair in hours),scheduled preventive maintenance, raw product throughput (workpieces perhour), production tests (hours), mean time to test (hours),systems/operator, equipment yield, incoming wafer value ($), densitydefect, faulty probability, device area, and completed workpiece value($). The cost of manufacture parameters and information can generally beexpressed in a term representing a monetary value in any particular (orrelative) monetary system such as different country currency and/or amathematical expression relative thereto. Monetary values are generallyunderstood in the industry. Another set of preferred examples of cost ofmanufacture parameters comprise at least one parameter(s) selected fromthe group consisting of fixed costs, recurring costs, yield costs, toollife, throughput, composite yield, and utilization. SEMATECH haspublished generally widely accepted cost of manufacture parameters andCost of Ownership metrics which are included herein by reference intheir entirety for guidance and use of those skilled in thesemiconductor art. Further, Wright Williams and Kelly of Dublin, Calif.have published a manual entitled “Understanding and Using Cost ofOwnership” (rev. 0595-1) containing cost of manufacture parameters andequations for cost of manufacture calculation which is also includedherein by reference in its entirety for guidance and use of thoseskilled in the semiconductor arts. Where specific reference is madeherein to a specific definition of a particular cost of manufacturemetric, applicant will use for instance the Wright Williams and Kellyparametric yield or the SEMATECH equipment yield naming for additionalspecificity. Where further specificity is desirable, the Wright Williamsand Kelly definition shall be used for that term for claiminterpretation for that term (unless the term is expressly defined inthe claim).

Non limiting example of methods to make available preferred cost ofmanufacture information include use of various mathematical equations,calculating specific parameters, memory look-up tables or databases forgenerating certain parameters such as historical performance orpreferred parameters or constants; neural networks, fuzzy logictechniques for systematically computing or obtaining preferred parametervalues. It is also to be understood that often a single semiconductorwafer can undergo multiple wafer finishing steps. Each time thesemiconductor wafer is finished in a wafer pass, the value of thesemiconductor wafer increases due to multiple processing steps and thusthe value of the equipment yield changes. A method which updates thecost of manufacture parameters consistent with the current manufacturingstep is preferred. Those skilled in the arts of activity basedaccounting can generally setup appropriate look-up tables containingappropriate cost of manufacture parameters to use for in situ processcontrol given the teachings and guidance herein. The semiconductor wafercan be tracked during processing with a tracking code. As anillustrative example, a semiconductor wafer can be assigned with atrackable UPC code. U.S. Pat. No. 5,537,325 issued to Iwakiri, et al.,on Jul. 16, 1997 teaches a method to mark and track semiconductor waferssliced from an ingot through the manufacturing process and is includedfor by reference in its entirety for general guidance and appropriatemodification by those skilled in the art. Process and cost ofmanufacture information can be tracked and stored by wafer with thistechnology when used with the new disclosures herein.

Algorithms, tables, memory look-up tables, databases, and methods tosolve equations simultaneously are generally known. Statistical methodsto monitor manufacturing yields are generally known. FIGS. 6-9 representsome general costs, graphs, and equations for some cost of manufactureparameters for a given set of input data and can generally be modifiedby those skilled in the art for new, specific manufacturing conditionsfor specific semiconductor wafers having die. Methods for predictivecontrol are known in the control arts. Methods for adaptive control areknown in the control arts. Methods using statistical procedures fornon-constant mean variable control are generally known in the controlarts. Modeling process methods to aid control are also known. Each ofthese can be preferred for specific applications. Predictive control,adaptive control, and dynamic process optimization have in used in thecontrol arts. U.S. Pat. Nos. 5,661,669 to Mozumder, 5,740,033 to Wassicket al., 5,774,633 to BaBa et al., 5,987,398 to Halverson et al.,6,167,360 to Erickson et al., 6,249,712 to Boiquaye, and 6,289,508 toErickson et al. give general examples process optimization and areincluded in their entirety for general guidance and appropriatemodification by those skilled in the art.

A method of finishing of a semiconductor wafer surface being finishedwherein a mathematical formula is used to calculate in situ at least oneimproved process control parameter value based at least in part upon atleast one cost of manufacture parameter selected from the groupconsisting of parametric yield, equipment yield, defect density, andfinishing rate and then adjusting in situ at least one improved processcontrol parameter is preferred. A method of finishing wherein at leastone cost of manufacture parameter is evaluated in situ for improvementand used at least in part to improve control is preferred and a methodof finishing wherein at least two cost of manufacture parameters areevaluated in situ for improvement and used at least in part to improvecontrol is more preferred and a method of finishing wherein at leastthree cost of manufacture parameters are evaluated in situ forimprovement and used at least in part to improve control is even morepreferred. A method of finishing of a semiconductor wafer surface beingfinished wherein a mathematical formula is used to calculate in situ atleast one improved process control parameter value based at least inpart upon at least two cost of manufacture parameters selected from thegroup consisting of parametric yield, equipment yield, defect density,and finishing rate and then adjusting in situ at least one improvedprocess control parameter is more preferred. A method of finishing of asemiconductor wafer surface being finished wherein a mathematicalformula is used to calculate in situ at least one improved processcontrol parameter value based at least in part upon at least three costof manufacture parameters selected from the group consisting ofparametric yield, equipment yield, defect density, and finishing rateand then adjusting in situ at least one improved process controlparameter is even more preferred. A method of finishing of asemiconductor wafer surface being finished wherein a mathematicalformula is used to calculate in situ at least two improved processcontrol parameter values based at least in part upon at least two costof manufacture parameters selected from the group consisting ofparametric yield, equipment yield, defect density, and finishing rateand then adjusting in situ at least those two improved process controlparameters is even more particularly preferred. These preferred cost ofmanufacture parameters are relatively difficult to improve during insitu processing because of their complexity and because they can haveopposite effects on the cost of manufacture and thus a processor isgenerally quite effective for these calculations. Preferably, thecalculation to improve cost of manufacture using the cost of manufactureparameters can be completed at least 4 times during the finishing cycletime and more preferably the calculations can be completed at least 6times during the finishing cycle time and even more preferably thecalculations can be completed at least 10 times during the finishingcycle time and even more particularly preferably the calculations can becompleted at least 20 times during the finishing cycle time. Preferably,the in situ process control parameter value can be adjusted at least 4times during the finishing cycle time and more preferably at least 6times during the finishing cycle time and even more preferably at least10 times during the finishing cycle time and even more particularlypreferably at least 20 times during the finishing cycle time.Preferably, the in situ process control parameter value is controlled atleast 4 times during the finishing cycle time and more preferably atleast 6 times during the finishing cycle time and even more preferablyat least 10 times during the finishing cycle time and even moreparticularly preferably at least 20 times during the finishing cycletime. Currently, a finishing cycle time of at most 6 minutes ispreferred and of at most 4 minutes is more preferred and of at most 3minutes is even more preferred and of at most 2 minutes is even moreparticularly preferred. Generally shorter cycle times are preferredbecause this generally increases throughput and reduces costs.Currently, a finishing cycle time of at least one half minute ispreferred. Finishing cycle time is a preferred cost of manufactureparameter for optimization. By repeatedly calculating and adjusting theprocess control parameter(s) value(s), better process control andimproved cost of manufacture can be effected. Generally, a maximum ofone hundred calculations and process control parameter adjustmentsduring a finishing cycle time are preferred although more can be usedfor particularly critical semiconductor wafer finishing. A processcontrol parameter which changes the friction during finishing is apreferred process control parameter and a process control parameterwhich changes the coefficient of friction is a more preferred processcontrol parameter. FIG. 12 includes examples of preferred steps in oneembodiment of a method to control semiconductor wafer finishing usingcost of manufacture parameters. FIG. 13 includes examples of preferredsteps in another embodiment of a method to control semiconductor waferfinishing using cost of manufacture parameters.

A processor can evaluate input signals rapidly with the cost ofmanufacture parameters with algorithms, look-up tables, fuzzy logic,iterative calculation methods, and/or solving multiple simultaneousequations to develop an improved output control signal from thecontroller and/or subsystem controller.

Process Control Parameters

Preferred process control parameters include those control parameterswhich can be changed during processing and affect workpiece finishing.Control of the operative finishing motion is a preferred process controlparameter. Examples of preferred operative finishing motions includerelative velocity, pressure, and type of motion. Examples of preferredtypes of operative finishing motion include tangential motion, planarfinishing motion, linear motion, vibrating motion, oscillating motion,and orbital motion. Finishing temperature is a preferred process controlparameter. Finishing temperature can be controlled by changing the heatsupplied to the platen or heat supplied to the finishing composition.Alternately, friction can also change the finishing temperature and canbe controlled by changes in lubrication, applied pressure duringfinishing, and relative operative finishing motion velocity. Changes inlubricant can be effected by changing finishing composition(s) and/orfeed rate(s). A preferred group of process control parameters consistsof parameters selected from the group consisting of wafer relativevelocity, platen velocity, polishing pattern, finishing temperature,force exerted on the operative finishing interface, finishingcomposition, finishing composition feed rate, and finishing padconditioning

The semiconductor industry is in a relentless journey to increasecomputing power and decrease costs. Finishing of a semiconductor waferusing in situ calculations of cost of manufacture parameters to improvefinishing control parameters can help simultaneously to decrease costand reduce unwanted defects. Using current cost of manufactureparameters along with a friction sensing method to evaluate and adjustthe boundary layer lubrication in a manner that adjustably controls thecoefficient of friction in the operative finishing interface can beparticularly effective at reducing unwanted surface defects such asmicroscratches and microchatter. This system is particularly preferredfor finishing with fixed abrasive finishing elements. In additiongenerally helping to improve such parameters as equipment yield,parametric yield, and defect density, the “cuttability” or cut rate ofthe fixed abrasive finishing element can generally be extended whichimproves uptime or equipment utilization. The coefficient of friction inthe operative finishing interface can change any number of times duringa relatively short finishing cycle time making manual calculationsineffective. Further, the semiconductor wafer cost of manufactureparameters are relatively complex to calculate and the finishing processis relatively short thus manual calculations for equipment adjustmentand control are even more difficult and ineffective. Rapid, multipleadjustments of process control parameters using process sensorsoperatively connected to a processor with access to cost of manufactureparameters are particularly preferred for the rapid in situ processcontrol which helps to increase computing power in the finishedsemiconductor wafer and decrease manufacturing costs. Thus one can moreeffectively control, preferably in situ, finishing during changes inlubricating aid changes (like composition, concentration, or operatingcondition changes) and as applied pressure or operative finishing motionchanges by using the systems taught herein. Optimizing the cost ofmanufacture during real time with preferred operative friction sensor(s)information and useful cost of manufacture information such as currentcost of manufacture information, preferably derived from individualand/or semiconductor wafer cost tracking information during manufacture,can aid in reducing costs on this relentless journey. Optimizing thecost of manufacture during real time useful cost of manufactureinformation such as current cost of manufacture information, preferablyat least in part related to individual and/or semiconductor wafer costtracking information during manufacture, can aid in reducing costs onthis relentless journey. Control of the coefficient of friction in theoperative finishing interface is particularly useful and effective tohelp reduce unwanted surface defects, preferably when combined with realtime cost of manufacture information, information processing capability,and real time finishing control capability. Tracked information such ascost of manufacture information can aid in improved effectiveness of insitu control of lubrication in the operative finishing interface.

A model for process control is generally preferred. An empirically basedprocess model can be preferred for some applications. A model using aquantity of historical performance can be a preferred model. A firstprinciples-based process model can also be used for control. A model forpredictive control can also be preferred for some applications. Using atleast in part a first principles process model and at least in part anempirically based process model can be preferred for process control. Ayield model can also be preferred for process control. A yield modelbased at least in part on historical performance is currently preferred.A recipe for finishing a semiconductor wafer can also be used. A recipecan be developed and/or modified based on historical performance.Multiple recipes stored in the look-up tables are preferred. A processmodel, more preferably multiple process models can be stored in thelook-up tables. A processor having access to the look-up tables ispreferred. A control subsystem having access to least one process modelis preferred and access to at least two process models is more preferredand access to at least three process models is even more preferred.Yield models are generally known to those skilled in the semiconductorwafer manufacturing arts. Process models are generally known to thoseskilled in the semiconductor wafer manufacturing arts.

Connecting this process control technology, especially non-steady stateprocess to control, in a networking fashion to other equipment in afactory can be preferred. Information on layer thickness, processingtimes, uniformity, and the like can be shared between equipment tofurther change and/or improve cost of manufacture. Connecting thisprocess control technology, especially non-steady state process tocontrol, in a networking fashion to other equipment in a factory can bepreferred. Information on layer thickness, processing times, uniformity,and the like can be shared between equipment to further change and/orimprove business performance and/or profits. For instance, if the layeradded is thicker or thinner than target processing conditions for thatstation, the next station of finishing can be adjusted accordingly tochange the finishing recipe and/or conditions. For instance, if thelayer is too thick, the next station (if removing material) can beadjusted to remove material more aggressively or for a longer processingperiod. An apparatus for finishing connected to a multiplicity of otherworkpiece fabrication machinery, and information derived therefrom in anoperative computerized network, the control subsystem having access toat least a portion of the other workpiece fabrication machinery,metrology equipment, and information derived therefrom is preferred. Anapparatus for finishing connected to a multiplicity of other workpiecefabrication machinery, and information derived therefrom in an operativecomputerized network, the control subsystem having access to the otherworkpiece fabrication machinery, metrology equipment, and informationderived therefrom for feedforward and feedback control while applyingthe finishing energy to the workpiece is also preferred. A process modelis preferred for improved process control. A cost of manufacture modelis preferred for improved process cost awareness and control thereof. Anactivity based cost of manufacture model is more preferred for improvedprocess cost awareness and control thereof.

Storing information creating a family of stored information ispreferred. Finishing information is a preferred stored information.Tracked information is a preferred stored information. Cost ofmanufacture information is a preferred stored information. Storing amodel is a preferred stored information. Storing previously changedstored information is a preferred stored information. Storinginformation for later use including information selected from the groupconsisting of a sales cost, revenue, a customer, customer order, and amodel along with a cost of manufacture parameter in a processor readablememory device is preferred. Storing information including informationselected from the group consisting of a sales cost, a revenue, acustomer, customer order, and a model along with a cost of manufactureparameter and a workpiece tracking code in a processor readable memorydevice for later use is preferred. Storing information for later useincluding information selected from the group consisting of a salescost, a revenue, a customer, customer order, and a model along with costof manufacture information including at least a cost of manufactureparameter in a processor readable memory device is preferred. Storinginformation for later use including information selected from the groupconsisting of a sales cost, a revenue, a customer, customer order, and amodel along with cost of manufacture information including at least acost of manufacture parameter and a workpiece tracking code in aprocessor readable memory device is preferred. Storing information forlater use including information selected from the group consisting of asales cost, a revenue, a customer, customer order, and a model alongwith cost of manufacture information including at least a cost ofmanufacture parameter and a workpiece tracked information in a processorreadable memory device is preferred. Storing information for later useincluding information selected from the group consisting of a salescost, a revenue, a customer, customer order, and a model along with costof manufacture information including at least three cost of manufactureparameters and workpiece tracking code in a processor readable memorydevice is preferred. Storing information for later use includinginformation selected from the group consisting of a sales cost, arevenue, a customer, customer order, and a model along with cost ofmanufacture information including at least three cost of manufactureparameters and workpiece tracked information in a processor readablememory device is preferred. Storing information for later use includinginformation selected from the group consisting of a sales cost, arevenue, a customer, customer order, and a model along with in situprocess information and workpiece tracked information in a processorreadable memory device is preferred. A workpiece tracking code is apreferred example of workpiece tracked information. Determining a changefor at least one model with the stored information is preferred.Determining a change for a process model with the stored information ispreferred and for at least two process models is more preferred and forat least three process models is even more preferred. Determining achange for at least one cost model with the stored information ispreferred and for at least two cost models is more preferred and for atleast three cost models is even more preferred. Determining a change fora cost of manufacture model with the stored information is preferred andfor at least two cost of manufacture models is more preferred and for atleast three cost of manufacture models is even more preferred.Determining for a change a business model with the stored information ispreferred and for at least two business models is more preferred and forat three business models is even more preferred. Changing a model afterdetermining a change is preferred and changing a model at two separatetimes is more preferred and changing a model at three separate times iseven more preferred. Using the changed model for feedforward control ispreferred. Using the changed model for feedback control is preferred.Using the changed stored information for real time (or in situ) controlis more preferred. Using the changed stored information for feedforwardcontrol is preferred. Using the changed stored information for feedbackcontrol is preferred. Determining a change for a process controlparameter with the stored information is preferred.

Using the changed stored information for evaluating a multiplicityfinishing information and wherein at least a portion the multiplicity ofthe finishing information has an effect on a cost of manufacture of theworkpiece is preferred. Using the changed stored information forevaluating a multiplicity finishing information and wherein at least aplurality of the multiplicity of the finishing information has an effecton a cost of manufacture of the workpiece is more preferred. Using thechanged stored information for evaluating a multiplicity finishinginformation and wherein at least a multiplicity of the multiplicity ofthe finishing information has an effect on a cost of manufacture of theworkpiece is even more preferred. Using the changed stored informationfor evaluating a multiplicity finishing information and wherein at leasta portion the multiplicity of the finishing information has anappreciable effect on a cost of manufacture of the workpiece ispreferred. Using the changed stored information for evaluating amultiplicity finishing information and wherein at least a plurality ofthe multiplicity of the finishing information has an appreciable effecton a cost of manufacture of the workpiece is more preferred. Using thechanged stored information for evaluating a multiplicity finishinginformation and wherein at least a multiplicity of the multiplicity ofthe finishing information has an appreciable effect on a cost ofmanufacture of the workpiece is even more preferred. Changing a processcontrol parameter after determining a change is preferred. Changing aprocess control parameter after determining an appreciable change ispreferred.

Using a changed family of stored information for at least in partdetermining an appreciable finishing change for a future finishing ofsemiconductor wafer. Using a changed family of stored information for atleast in part determining an appreciable finishing change for a futurefinishing of a future semiconductor wafer layer is a preferred use.Using a changed family of stored information for at least in partdetermining an appreciable change for a process model is a preferreduse. Using a changed family of stored information for at least in partdetermining an appreciable change for a forecast of the cost ofmanufacture is a preferred use. Using a changed family of storedinformation for at least in part determining an appreciable change for aforecast of the consumable cost portion of the cost of manufacture is apreferred use. Using a changed family of stored information for at leastin part determining an appreciable change for a forecast of thefinishing composition cost portion of the cost of manufacture is apreferred use. Using a changed family of stored information for at leastin part determining an appreciable change for a forecast of thefinishing element cost portion of the cost of manufacture is a preferreduse. Using a changed family of stored information for at least in partdetermining an appreciable change for a forecast of the equipment yieldcost portion of the cost of manufacture is a preferred use. Using achanged family of stored information for at least in part determining anappreciable change for a forecast of the mean time to repair cost effecton the cost of manufacture is a preferred use. Using a changed family ofstored information for at least in part determining an appreciablechange for a forecast of the finishing workpieces per hour effect on thecost of manufacture is a preferred use. Using a family of storedinformation can aid in generally improving the finishing processes forworkpieces such a semiconductor wafer manufacture.

Reducing the processor readable storage space used for the storedinformation is preferred. Reducing the computer readable storage spaceused for the stored information is preferred. Reducing the storedinformation using a computer algorithm is preferred. Reducing the storedinformation using a computer algorithm is preferred. Reducing the storedinformation using at least one mathematical algorithm is preferred. Byreducing the stored information, the costs can be reduced. Determining achange for a model with the reduced stored information is preferred.Determining a change for a process model with the reduced storedinformation is preferred. Determining a change for a cost model with thereduced stored information is preferred. Determining a change for a costof manufacture model with the reduced stored information is preferred.Determining for a change a business model with the reduced storedinformation is preferred. Changing a model after determining a change ispreferred. Using the changed model for feedforward control is preferred.The storage space is preferably processor readable. The storage space ispreferably computer readable. Using the changed model for feedbackcontrol is preferred. Using the changed model for real time control ismore preferred. Determining a change for a process control parameterwith the reduced stored information is preferred. Changing a processcontrol parameter after determining a change is preferred.

A run to run, batch to batch, and in situ process control method havingthe features and benefits of the preferred embodiment of this inventionare new and useful. The feedforward and feedback process control methodhaving features and benefits of the preferred embodiments of thisinvention are new and useful. The networking of process equipment andmethods of control have features and benefits of the preferredembodiments of this invention are new and useful.

In process costs tracked with an activity based cost model can bepreferred. An activity based information is a preferred information forprocess control. Historical performance including activity based costinformation is a more preferred information for process control.Historical performance including activity based cost information on thecurrent workpiece is an even more preferred example of example ofinformation for process control. Historical performance includingactivity based cost information on prior workpiece(s) is an even morepreferred example of example of information for process control.Historical performance including activity based cost information thecurrent workpiece and on prior workpiece(s) is an even more preferredexample of information for process control. Activity based cost canmeasure a cost (or costs) by following activities along with theirassociated costs (resources used) during manufacture. Activity costscomprise resource related costs including labor, material, consumable,and equipment related activities which consume the costs. As anonlimiting example, a resource can be refining equipment useful forplanarizing, polishing, and buffing activities. The finishing equipmentcost can be related to the cost drivers of finishing including forinstance planarizing and polishing activities by an output quantity (forexample hours) consumed in each of finishing or planarizing or polishingby cost driver per unit cost rate (for instance, $/hour of refiningequipment used). In a similar manner, labor costs, material costs, andconsumable costs can be assigned to activities using an appropriate costdriver(s) and output quantities. The activity costs can then be furtherrelated to the style, type, or intermediate stage of manufacture of aworkpiece. Different types and/or different stages of manufacture of asemiconductor wafer use different amounts of different cost drivers(such as differences in planarizing, polishing, and buffing drivers). Anactivity based cost model having a multiple of different level ofactivity costs and a multiple of different cost drivers in each of themultiple of different levels of activity costs is preferred forsemiconductor wafer refining process control. An activity cost is apreferred cost of manufacture parameter for process control. An activitycost and/or cost driver which is a mathematical composite derived fromrefining a multiplicity of workpieces are preferred. An activity costand/or cost driver which is a mathematical composite at least in partrelated to refining a multiplicity of workpieces are preferred. A mode,median or mean value of an activity cost and/or cost driver is apreferred example of a mathematical composite derived from refining amultiplicity of workpieces (or more preferably, workpiece batches). Amulti-point moving mathematical composite (for instance a five point orten point moving average) is a preferred example mathematical compositederived from refining a multiplicity of workpieces (or more preferably,workpiece batches). A preferred mathematical composite is derived, atleast in part, mathematical expressions. Using a mathematical compositecan facilitate process control using statistical methods to reduce shortterm noise which can adversely affect process control. An activity costof the incremental costs associated with the specific step for instance,ILD finishing or planarizing is a preferred activity cost for processcontrol. An activity cost of the cumulative costs associated up toand/or up to and including the specific step for instance, ILD finishingor planarizing is a preferred activity cost for process control. Eachcan give useful information for controlling the process controlparameters. A multistage activity cost model is preferred for refiningcontrol during semiconductor wafer manufacture. An activity cost modelbased at least in part on the manufacturing sequential processactivities is very preferred because this can aid in further evaluatingthe change(s) to a process control parameter when evaluating an activitybased cost of manufacture parameter. Historical information includingactivity cost information is preferred stored in look-up tables. Costdrivers, activity functions, activity costs, and different activity costmodels represent nonlimiting preferred historical information relatingto activity costs for storing in a look-up table. An activity cost modelbased at least in part on the manufacturing process activities occurringchronologically in time is very preferred because this facilitates timesensitive process control with chronological activity costs. An activitycost model based at least in part on the manufacturing processactivities occurring chronologically in time and further having a yieldmodel is very preferred because this facilitates time sensitive processcontrol with chronological activity costs including considerations ofproduct yields.

Storing historical information including at least one cost ofmanufacture parameter in at least one lookup-table is preferred andstoring historical information including at least two cost ofmanufacture parameters in at least one lookup-table is more preferredand storing historical information including at least five cost ofmanufacture parameters in at least one lookup-table is even morepreferred and storing historical information including at least amajority of cost of manufacture parameters in at least one lookup-tableis even more particularly preferred. Storing historical informationincluding at least one process control parameter in at least onelookup-table is preferred and storing historical information includingat least three process control parameters in at least one lookup-tableis more preferred and storing historical information including at leastfive process control parameters in at least one lookup-table is evenmore preferred and storing historical information including a majorityof the process control parameters in at least one lookup-table is evenmore particularly preferred. Historical information stored with trackinginformation related to individual workpieces is preferred and historicalinformation stored with tracking information related to semiconductorwafer batches can also be preferred. Data mining can be accomplished oninformation used previously for process control. This reduces the costof creating a new table or database for data mining. Further, the datamining results can be more readily applied to new, advanced processcontrol algorithm(s). A cost of manufacture forecasting model can beaccomplished on information used previously for process control. Byhaving the cost of manufacture parameters stored in this manner, animproved cost of manufacture forecasting model can be developed andimplemented. The new cost of manufacture models can be used whentransitioning from a ramp-up phase of development to a commercial phaseof development. Modified and/or new process control algorithm(s) can bedetermined and/or developed by evaluating ramp-up historical informationincluding process control parameters and cost of manufacture parametersand then applying the new process control algorithm for commercialmanufacture. Modified and/or new process control algorithm(s) can bedetermined and/or developed by evaluating previous historicalinformation including process control parameters and cost of manufactureparameters and then applying the new process control algorithm forfuture commercial manufacture. Thus the historical information which isstored in memory such as a look-up table is preferably used for aplurality of purposes to reduce the cost of manufacture and/or improvedthe enterprise profitability. By using the historical information usedfor initial process control multiple times, additional costs to collectinformation for data mining, cost of manufacture modeling, and processcontrol algorithm improvement is accomplished in a new, more effectivemanner to give a new lower cost result.

A control subsystem can improve finishing control and versatility offinishing using models, cost of manufacture parameters, cost models,and/or business models in a new and unexpected manner giving new,unexpected results. The illustrative use of an algorithm, data mining,fuzzy logic, a mathematical formula, and neural network can also, andpreferably be applied determining process control algorithms and processcontrol models for finishing methods using a lubricant using generallyknown modifications to the illustrative examples.

A model to aid process control can be preferred which uses cost ofmanufacture parameters for process control. A process model is apreferred example of a model, which can be used in some embodiments fora process control and a process model which includes differentiallubrication is a more preferred example of a model, each of which can beused in some embodiments for process control. A cost model is apreferred example of a model which can be used in some embodiments for aprocess control. A business model which determines profit using costsand revenue is a preferred example of a model which can be used in someembodiments for a process control. A business model having costs andrevenue is a preferred example of a model which can be used in someembodiments for a process control. A business model using activity basedaccounting having costs and revenue is a preferred example of a modelwhich can be used in some embodiments for a process control. A businessmodel using activity based accounting which determines profit usingcosts and revenue is a preferred example of a model which can be used insome embodiments for a process control. A business model having accessto a cost model and a sales model is a preferred example of a modelwhich can be used in some embodiments for a process control. A businessmodel having access to at least one cost of manufacture parameter, acost model, and a sales model is a preferred example of a model whichcan be used in some embodiments for a process control. A business modelhaving access to at least three cost of manufacture parameters, a costmodel, and a sales model is a more preferred example of a model whichcan be used in some embodiments for a process control. A cost modelusing activity accounting is a preferred example of a model which can beused in some embodiments for process control. An activity based costmodel is a preferred example of a model which can be used in someembodiments for a process control. A cost of manufacture model is apreferred example of a cost model which can be used in some embodimentsfor a process control. A cost of manufacture model using activityaccounting is a preferred example of a cost model, which can be used insome embodiments for a process control. An activity based cost ofmanufacture model is a preferred example of a cost model which can beused in some embodiments for a process control. A sales model is apreferred example of a cost model which can be used in some embodimentsfor a process control. An activity based cost of sales model is apreferred example of a cost model which can be used in some embodimentsfor process control. An activity based cost of sales model which assignsactivity costs by customer is a more preferred example of a cost modelwhich can be used in some embodiments for process control. An activitybased cost of sales model which assigns activity costs by customer andorder is an even more preferred example of a cost model which can beused in some embodiments for process control. An empirically-based modelcan be preferred. An empirically-based model developed at least in parton stored historical performance is preferred. Process models aregenerally known to those skilled in the semiconductor wafermanufacturing arts. Determining a change for at least one processcontrol parameter using at least one model disclosed herein for changingand/or controlling the method of making a workpiece is preferred. Costmodels can, given the guidance and teachings herein, cost models cangenerally be developed by those generally skilled in the art and usedfor process control as used herein. Business models can, given theguidance and teachings herein, cost models can generally be developed bythose generally skilled in the art and used for process control as usedherein. Methods to compute cost of manufacture parameter(s) and/oractivity based cost(s) with cost of manufacture information aregenerally well known. Methods to calculate cost of manufactureparameter(s) and/or activity based cost(s) with cost of manufactureinformation are generally well known. Methods to determine cost ofmanufacture parameter(s) and/or activity based cost(s) with cost ofmanufacture information are generally well known. Additional generalhelpful guidance on business, cost, and profit models along withgenerally useful calculations, mathematical algorithms, formulas, andother useful computing methods can be found in the books Principles ofCorporate Finance by Richard A. Bealey and Stewart C. Myers, McGraw-HillCompanies, 1996, Activity-based Cost Management Making Work by GaryCokins, McGraw-Hill Companies, 1996 and Pricing for Profitability byJohn L. Daly, John Wiley & Sons, Inc., 2002 and are included herein intheir entirety for general guidance and modification by those skilled inthe arts.

An empirically-based process model can be preferred. An empiricallybased process model developed at least in part on historical performanceis preferred. A mathematical equation and/or formula developed fromlaboratory experience, semiworks experience, test wafer experience,and/or actual production can be preferred. Curve fitting to determine amathematical equation and/or formula based on laboratory experience,semiworks experience, test wafer experience, and/or actual production isgenerally known to those skilled in the semiconductor arts. Curvefitting to determine mathematical formulas using historical performancecan be preferred. Mathematical equations generally can be used also forinterpolation and extrapolation. Multiple mathematical equations withmultiple unknowns can be solved or resolved in real time for improvedprocess control with a processor. A first principles-based process modelcan also be used for control. Using at least in part a first principlesprocess model and at least in part an empirically based process modelcan be preferred for process control. A yield model can also bepreferred for process control. A yield model based at least in part onhistorical performance is currently preferred. A recipe for finishing asemiconductor wafer can also be used. A recipes can be developed and/ormodified based on historical performance. Multiple recipes stored in thelook-up tables is preferred. A process model, more preferably multipleprocess models can be stored in the look-up tables. A processor havingaccess to the look-up tables is preferred. A control subsystem havingaccess to least one process model is preferred and access to at leasttwo process models is more preferred and access to at least threeprocess models is even more preferred. Yield models are generally knownto those skilled in the semiconductor wafer manufacturing arts. Processmodels are generally known to those skilled in the semiconductor wafermanufacturing arts.

Connecting this process control technology, especially non-steady stateprocess to control, in a networking fashion to other equipment in afactory can be preferred. Information on layer thickness, processingtimes, uniformity, and the like can be shared between equipment tofurther change and/or improve cost of manufacture. Connecting thisprocess control technology, especially non-steady state process tocontrol, in a networking fashion to other equipment in a factory can bepreferred. Information on layer thickness, processing times, uniformity,and the like can be shared between equipment to further change and/orimprove business performance and/or profits. For instance, if the layeradded is thicker or thinner than target processing conditions for thatstation, the next station of finishing can be adjusted accordingly tochange the finishing recipe and/or conditions. For instance, if thelayer is too thick, the next station (if removing material) can beadjusted to remove material more aggressively or for a longer processingperiod. An apparatus for finishing connected to a multiplicity of otherworkpiece fabrication machinery, and information derived therefrom in anoperative computerized network, the control subsystem having access toat least a portion of the other workpiece fabrication machinery,metrology equipment, and information derived therefrom is preferred. Anapparatus for finishing connected to a multiplicity of other workpiecefabrication machinery, and information derived therefrom in an operativecomputerized network, the control subsystem having access to the otherworkpiece fabrication machinery, metrology equipment, and informationderived therefrom for feedforward and feedback control while applyingthe finishing energy to the workpiece is also preferred. A process modelis preferred for improved process control. A cost of manufacture modelis preferred for improved process cost awareness and control thereof. Anactivity based cost of manufacture model is more preferred for improvedprocess cost awareness and control thereof.

An empirically-based process model can be preferred. An empiricallybased process model developed at least in part on historical performanceis preferred. A mathematical equation and/or formula developed fromlaboratory experience, semiworks experience, test wafer experience,and/or actual production can be preferred. Curve fitting to determine amathematical equation and/or formula based on laboratory experience,semiworks experience, test wafer experience, and/or actual production isgenerally known to those skilled in the semiconductor arts. Curvefitting to determine mathematical formulas using historical performancecan be preferred. Mathematical equations generally can be used also forinterpolation and extrapolation. Multiple mathematical equations withmultiple unknowns can be solved or resolved in real time for improvedprocess control with a processor. A first principles-based process modelcan also be used for control. Using at least in part a first principlesprocess model and at least in part an empirically based process modelcan be preferred for process control. A yield model can also bepreferred for process control. A yield model based at least in part onhistorical performance is currently preferred. A recipe for finishing asemiconductor wafer can also be used. A recipes can be developed and/ormodified based on historical performance. Multiple recipes stored in thelook-up tables is preferred. A process model, more preferably multipleprocess models can be stored in the look-up tables. A processor havingaccess to the look-up tables is preferred. A control subsystem havingaccess to least one process model is preferred and access to at leasttwo process models is more preferred and access to at least threeprocess models is even more preferred. Yield models are generally knownto those skilled in the semiconductor wafer manufacturing arts. Processmodels are generally known to those skilled in the semiconductor wafermanufacturing arts.

Connecting this process control technology, especially non-steady stateprocess to control, in a networking fashion to other equipment in afactory can be preferred. Information on layer thickness, processingtimes, uniformity, and the like can be shared between equipment tofurther change and/or improve cost of manufacture. Connecting thisprocess control technology, especially non-steady state process tocontrol, in a networking fashion to other equipment in a factory can bepreferred. Information on layer thickness, processing times, uniformity,and the like can be shared between equipment to further change and/orimprove business performance and/or profits. For instance, if the layeradded is thicker or thinner than target processing conditions for thatstation, the next station of finishing can be adjusted accordingly tochange the finishing recipe and/or conditions. For instance, if thelayer is too thick, the next station (if removing material) can beadjusted to remove material more aggressively or for a longer processingperiod. An apparatus for finishing connected to a multiplicity of otherworkpiece fabrication machinery, and information derived therefrom in anoperative computerized network, the control subsystem having access toat least a portion of the other workpiece fabrication machinery,metrology equipment, and information derived therefrom is preferred. Anapparatus for finishing connected to a multiplicity of other workpiecefabrication machinery, and information derived therefrom in an operativecomputerized network, the control subsystem having access to the otherworkpiece fabrication machinery, metrology equipment, and informationderived therefrom for feedforward and feedback control while applyingthe finishing energy to the workpiece is also preferred. A process modelis preferred for improved process control. A cost of manufacture modelis preferred for improved process cost awareness and control thereof. Anactivity based cost of manufacture model is more preferred for improvedprocess cost awareness and control thereof.

FIGS. 10-13 illustrate preferred methods of finishing. Methods describedand claimed herein can be implemented by combining some steps into onelarger step or changing the order of generally known interchangeablesteps known to those skilled in the art. As an illustrative example insitu finishing sensing can generally be done before, during, or afterreceiving cost of manufacture information such as remote cost ofmanufacture information or cost of manufacture information stored inmemory look-up tables. As an illustrative example in situ finishingsensing can generally be done before, during, or after receivinghistorical information such as historical information stored in memorylook-up tables. FIG. 14 a are a nonlimiting illustrative of controlsubsystems which are networked to each other and to their respectiveprocess equipment (multiple finishing apparatus). As indicated by thearrows the apparatus can exchange information. Not illustrated butgenerally understood, the process and communication can also includeproceeding equipment and other process steps and/or apparatus candownfield of this equipment. Further the as is generally known in thesemiconductor industry, some steps or groups of steps can be repeatedduring the manufacture of a semiconductor wafer (such as finishingand/or planarization). FIG. 14 b is a nonlimiting illustrative of acontrol subsystem which is networked to each other through a morecentral computer unit and directly to their respective process equipment(such as finishing apparatus as shown). Other apparatus such aspatterning apparatus and cleaning apparatus can also be networked aswill generally known to those skilled in the arts. As indicated by thearrows information can be exchanged with the different apparatus. Tosimplify the illustration, not shown, communication between thisequipment and other process steps and apparatus such as those upfield ordownfield of this equipment can generally be implemented by thoseskilled in the communication arts. Further the as is generally known inthe semiconductor industry, some steps or groups of steps can berepeated during the manufacture of a semiconductor wafer. Still further,there are many generally known operative networking systems which aregenerally known in the computer art field and process control fieldwhich will be functional and useful. FIGS. 15 a, 15 b, and 16 showalternate examples of manufacturing facilities and/or factories/and/orportions of factories for additional guidance and illustration and formodification by those skilled in the arts. For instance, the controlsubsystems can be embedded or remote or some combination thereof.Networks and operative connections can be direct or indirect and/or somecombination thereof. An operative network can aid in the process controlusing information selected from the group consisting of tracking codes,tracking information, cost of manufacture parameters, and models andcombinations thereof. An operative communications network betweenapparatus, preferably at three apparatus, is preferred for processcontrol when using finishing aids and/or cost of manufacture informationfor process control. Improved historical performance information can isgenerally available for improved process control, particularly iftracked information is also available.

The real time or in situ process control methods having features andbenefits of the preferred methods of this invention are new and usefulin the finishing industry.

Processor

A processor is preferred to help evaluate the operative sensorinformation, preferably a friction sensor probe information. A processorcan be a microprocessor, an ASIC, or some other processing means. Aprocessor preferably has computational and digital capabilities. Nonlimiting examples of processing information include use of variousmathematical equations, calculating specific parameters, memory look-uptables or databases for generating certain parameters such as historicalperformance or preferred parameters or constants, neural networks, fuzzylogic techniques for systematically computing or obtaining preferredparameter values. Input parameter(s) can include information on currentwafers being polished such as uniformity, expected polish rates,preferred lubricants(s), preferred lubricant concentrations, enteringfilm thickness and uniformity, workpiece pattern. Further preferrednon-limiting processor capabilities including adding, subtracting,multiplying, dividing, use functions, look-up tables, noise subtractiontechniques, comparing signals, and adjusting signals in real time fromvarious inputs and combinations thereof.

Historical performance can be used for determining advantageous changesto finishing control when using a finishing aid. A model can bepreferred for process control. A process model is a illustrative exampleof a preferred model. For example a process model developed usinghistorical performance can be a preferred for some applications. Forexample a cost of manufacture model developed using historicalperformance can also be a preferred for some applications. A historicalperformance including a quantity of historical information is apreferred illustrative example of historical performance. A historicalperformance including a quantity of historical information of aworkpiece is a more preferred illustrative example of historicalperformance. A historical performance including a quantity of historicalinformation of a current workpiece is a more preferred illustrativeexample of historical performance. A historical performance including aquantity of historical information of prior workpieces is a morepreferred illustrative example of historical performance. A historicalperformance including a quantity of historical information of theworkpiece and a quantity of historical information of prior workpiecesis an even more preferred illustrative example of historicalperformance. A historical performance including a quantity of historicaltracked information is a preferred illustrative example of historicalperformance. A historical performance including a quantity of historicaltracked information of a workpiece is a more preferred illustrativeexample of historical performance. A historical performance including aquantity of historical tracked information of a current workpiece is amore preferred illustrative example of historical performance. Ahistorical performance including a quantity of historical trackedinformation of prior workpieces is a more preferred illustrative exampleof historical performance. A historical performance including a quantityof historical tracked information of the workpiece and a quantity ofhistorical tracked information of prior workpieces is an even morepreferred illustrative example of historical performance. A quantity ofhistorical tracked information which has been tracked by a batch(s) ofworkpieces is a preferred illustrative example of a quantity ofhistorical tracked information. A quantity of historical trackedinformation which has been tracked by an individual workpiece is apreferred illustrative example of a quantity of historical trackedinformation. A quantity of historical tracked information which has beentracked for a multiplicity of individual workpieces is a particularlypreferred illustrative example of a quantity of historical trackedinformation. Tracked information of the finishing element is anillustrative example of preferred tracked information. Trackedinformation of the control subsystem is an illustrative example ofpreferred tracked information. Tracked information of a finishingapparatus having control subsystem is an illustrative example ofpreferred tracked information. The finishing element, control subsystem,and/or the finishing apparatus having tracking codes are preferred.Using historical tracked information for finishing with finishing aidscan generally be used to advantageously change finishing during thefinishing cycle time or at least a portion of the finishing cycle time.Using historical tracked information for finishing with finishing aidsduring the finishing cycle time can generally be used to advantageouslychange finishing during the finishing cycle time or at least a portionof the finishing cycle time.

Cost of manufacture information is preferred for determining changes toprocess control parameters. Historical performance including a quantityof historical cost of manufacture information is preferred andhistorical performance including a quantity of cost of manufactureinformation from the current workpiece is more preferred and historicalperformance including a quantity of cost of manufacture information fromthe current workpiece and prior workpieces is even more preferred. Costof manufacture information including a quantity of historical cost ofmanufacture information is preferred and cost of manufacture informationincluding a quantity of cost of manufacture information from the currentworkpiece is more preferred and cost of manufacture informationincluding a quantity of cost of manufacture information from the currentworkpiece and prior workpieces is even more preferred. Storing cost ofmanufacture information is preferred and storing cost of manufactureinformation including a quantity of cost of manufacture information fromthe current workpiece is more preferred and storing cost of manufactureinformation including a quantity of cost of manufacture information fromthe current workpiece and prior workpieces is even more preferred.Storing a portion of the cost of manufacture information is alsopreferred. The stored information can be used for current and futureprocess control and data mining.

Further general computing techniques such neural networks andstatistical process control are generally known to those skilled in thesemiconductor wafer processing arts. General computing techniques suchas neural networks (including examples learning neural networks), fuzzylogic, data mining, model control, and statistical process control(including examples of nonconstant mean of response variables) aregenerally known to those skilled in the various arts. Non-limitingillustrative examples of neural networks, fuzzy logic, data mining, useof cost of manufacture information, and statistical process control arefound in U.S. Pat. Nos. 5,774,833 to Baba et. al., 5,809,699 to Wong etal., 5,813,002 to Agrawal et al., 5,813,002 to Agrawal et al., 5,818,714to Zou et al., 5,822,220 to Baines, 5,828,812 to Khan et al., 5,830,955to Takeda et al., 5,832,468 to Miller et al., 5,832,466 to Feldgajer,5,841,671 to Furumoto, 5,841,651 to Fu, 5,978,398 to Halverson and6,568,989 to Molnar and are included herein by reference in theirentirety for all purposes and for general guidance and modification bythose skilled in the arts using the teachings herein.

Use of Information for Feedback, Feedforward, and Controller

Controllers to control the finishing of workpieces are generally knownin the art. Controllers generally use information at least partiallyderived from the processor to make changes to the process controlparameters. Some further advantages and use of feedback and feedforwardinformation is now discussed.

An advantage of this invention is the excellent degree of control itgives to the operator performing planarization and/or polishing. Tobetter utilize this control, the use of feedback information to controlthe finishing control parameters is preferred and in situ control ismore preferred. Controlling the finishing control parameters selectedfrom the group consisting of finishing composition feed rates, finishingcomposition concentration, operative finishing motion, and operativefinishing pressure is preferred to improve control of the finishing ofthe workpiece surface being finished and in situ control is moreparticularly preferred. Another preferred example of an finishingcontrol parameter is to use a different finishing element for adifferent portion the finishing cycle time such as one finishing elementfor the planarizing cycle time and a different finishing element for thepolishing cycle time. Workpiece film thickness, measuring apparatus, andcontrol methods are preferred methods of control. Mathematical equationsincluding those developed based on process results can be used.Finishing uniformity parameters selected from the group consisting ofTotal Thickness Variation (TTV), Focal plane deviation (FPD),Within-Wafer Non-Uniformity (WIW NU), and surface quality are preferred.Average cut rate is a preferred finishing rate control parameter.Average finishing rate is a preferred finishing rate control parameter.Controlling finishing for at least a portion of the finishing cycle timewith a finishing sensor subsystem to adjust in situ at least onefinishing control parameter that affect finishing results is a preferredmethod of control finishing. Information feedback subsystems aregenerally known to those skilled in the art. Illustrative non limitingexamples of wafer process control methods include U.S. Pat. No.5,483,129 to Sandhu issued in 1996, U.S. Pat. No. 5,483,568 to Yanoissued in 1996, U.S. Pat. No. 5,627,123 to Mogi issued in 1997, U.S.Pat. No. 5,653,622 to Drill issued in 1997, U.S. Pat. No. 5,657,123 toMogi issued in 1997, U.S. Pat. No. 5,667,629 to Pan issued in 1997, andU.S. Pat. No. 5,695,601 to Kodera issued in 1997 are included herein forguidance and modification by those skilled in the art and are includedherein by reference in their entirety.

Controlling at least one of the finishing control parameters based onusing friction sensor information combined with workpiece sensorinformation is preferred and controlling at least two of the finishingcontrol parameters using friction sensor information combined withworkpiece sensor information is more preferred. Using a electronicfinishing sensor subsystem to control the finishing control parametersis preferred. Feedback information selected from the group consisting offinishing rate information and product quality information such assurface quality information is preferred. Cost of manufactureinformation is also preferred information for control. Non-limitingpreferred examples of process rate information include polishing rate,planarizing rate, and workpiece finished per unit time. Non-limitingpreferred examples of quality information include first pass firstquality yields, focal plane deviation, total thickness variation,measures of non uniformity. Non-limiting examples particularly preferredfor electronics parts information includes Total Thickness Variation(TTV), Focal plane deviation (FPD), Within-Wafer Non-Uniformity (WIWNU), and surface quality.

In situ process control systems relying on workpiece finishing sensorsare generally known to those skilled in the CMP industry. Commercial CMPequipment advertised by Applied Materials and IPEC reference some ofthis equipment.

Further Comments on Method of Operation

Some preferred embodiments are now further discussed. Providing afinishing element finishing surface for finishing is preferred andproviding a finishing element finishing surface having lubricants forfinishing is also preferred and providing a finishing element having afinishing element finishing surface having lubricants dispersed thereinfor finishing is also preferred. Providing the workpiece surface beingfinished proximate to the finishing surface is preferred and positioningthe workpiece surface being finished proximate to the finishing elementfinishing surface is more preferred.

Supplying an operative finishing motion between the workpiece surfacebeing finished and the finishing element finishing surface is preferredand applying an operative finishing motion between the workpiece surfacebeing finished and the finishing element finishing surface is morepreferred. The operative finishing motion creates the movement andpressure at the operative finishing interface which supplies thefinishing action such as chemical reactions, tribochemical reactionsand/or abrasive wear generally caused by the abrasive particles. Anoperative finishing element finishing surface capable of inducing atribochemical reaction is preferred. An operative finishing motioncapable of inducing a tribochemical reaction is also preferred. Applyingan operative finishing motion that transfers the lubricant to theinterface between the finishing surface and the workpiece surface beingfinished is preferred and applying an operative finishing motion thattransfers the lubricant, forming a marginally effective lubricatinglayer in the operative finishing interface is more preferred andapplying an operative finishing motion that transfers the lubricant,forming a marginally effective lubricating boundary layer in theoperative finishing interface is even more preferred. The lubrication atthe interface reduces the occurrence of high friction, facilitatesreductions in finishing energy, and can help reduce related workpiecesurface damage. Applying an operative finishing motion that transfersthe lubricant, forming a lubricating boundary layer between at least aportion of the finishing surface and the workpiece surface beingfinished is preferred and applying an operative finishing motion thattransfers the lubricant, forming a marginally effective lubricatinglayer between at least a portion of the finishing surface and theworkpiece surface being finished in order to control abrasive wearoccurring to the workpiece surface being finished is more preferred andapplying an operative finishing motion that transfers the lubricant,forming a marginally effective lubricating boundary layer between atleast a portion of the finishing surface and the workpiece surface beingfinished in a manner that tribochemical wear occurs to the workpiecesurface being finished is even more preferred and applying an operativefinishing motion that transfers the lubricant, differentiallylubricating different regions of the heterogeneous workpiece surfacebeing finished is even more particularly preferred. With heterogeneousworkpiece surfaces, the potential to differentially lubricate and finisha workpiece surface has high value where the differential lubrication isunderstood and controlled.

A lubricant selected from the group consisting of a lubricant andchemically reactive aid is preferred. A lubricant which reacts with theworkpiece surface being finished is preferred and which reacts with aportion of the workpiece surface being finished is more preferred andwhich differentially reacts with heterogeneous portions of a workpiecesurface being finished is even more preferred. By reacting with theworkpiece surface, control of finishing rates can be improved and somesurface defects minimized or eliminated. A lubricant which reducesfriction during finishing is also preferred because surface defects canbe minimized.

Cleaning the workpiece surface reduces defects in the semiconductorlater on in wafer processing.

Supplying a lubricant to the workpiece surface being finished whichchanges the rate of a chemical reaction is preferred. Supplying andcontrolling a lubricant to the workpiece surface being finished having aproperty selected from the group consisting of changing the workpiecesurface coefficient of friction, changing workpiece surface average cutrate, and changing the cut rate of a specific material of the workpiecesurface being finished is particularly preferred.

Providing at least one friction sensor having a friction sensing surfaceproximate to the finishing element finishing surface and free of contactwith the workpiece surface is preferred and providing at least twofriction sensors having a friction sensing surfaces proximate to thefinishing element finishing surface and free of contact with theworkpiece surface is more preferred. Applying an operative frictionsensor motion between the friction sensor surface and the finishingelement finishing surface is preferred and applying an operativefriction sensor motion between at least two friction sensor surfaces andthe finishing element finishing surface is more preferred applying atleast two separate and independent operative friction sensor motionsbetween at least two friction sensor surfaces and the finishing elementfinishing surface is even more preferred in complex finishingsituations. Organic lubrication layers wherein the friction between twosurfaces is dependent on lubricant properties other than viscosity ispreferred. Different regional boundary layers on a semiconductor wafersurface being finished can be preferred for some finishing—particularlyplanarizing. A friction sensor, preferably a plurality of frictionsensors, can better detect changes in and control of finishing in manyfinishing situations and especially when lubricants are added to theoperative finishing interface. Controlling in situ a finishing controlparameter with a friction sensor subsystem is preferred and controllingin situ a finishing control parameter with a finishing sensor subsystemis more preferred. Controlling in situ the friction sensor motion ispreferred and controlling and changing in situ the friction sensormotion is more preferred. Controlling in situ the operative frictionsensor motion is even more preferred and controlling and changing insitu the operative friction sensor motion is also even more preferred.This can improve the quality and type of information available forcontrolling the finishing control parameter(s). As used herein, afriction sensor subsystem includes the friction sensor probe, theprocessor, and the controller along with the operative connectionsneeded therefore. As used herein, a finishing sensor subsystem includesthe friction sensor probe, workpiece sensor (if available), a processor,and a controller along with the operative connections needed therefore.As used herein, a finishing sensor subsystem preferably has at least oneoperative friction sensor and a finishing sensor subsystem having atleast two operative friction sensors is more preferred and a finishingsensor subsystem having at least one friction sensor and at least oneworkpiece sensor is also more preferred and a finishing sensor subsystemhaving at least two friction sensors and at least one workpiece sensoris particularly preferred for controlling finishing of semiconductorwafers. A preferred finishing sensor subsystem has access to cost ofmanufacture parameters, preferably current cost of manufactureparameters, and even more preferably, trackable current cost ofmanufacture parameters.

Sensing the friction between the friction sensor surface and thefinishing element finishing surface with at least one friction sensorsubsystem is preferred. Sensing the friction between the friction sensorsurface and the finishing element finishing surface with at least onefinishing sensor subsystem is more preferred, particularly if aworkpiece sensor is operable.

Using the method of this invention to finish a workpiece, especially asemiconductor wafer, by controlling finishing for a period of time witha friction sensor subsystem to adjust in situ at least one finishingcontrol parameter that affects finishing selected from the groupconsisting of the finishing rate and the finishing uniformity ispreferred. A preferred group of finishing control parameters areselected from the group consisting of the finishing composition,finishing composition feed rate, finishing temperature, finishingpressure, operative finishing motion velocity and type, and finishingelement type and condition change are preferred. A preferred frictionsensor subsystem and a preferred finishing sensor subsystem isoperatively connected electrically to the lubrication controlmechanism(s). A preferred method to measure finishing rate is to measurethe change in the amount of material removed in angstroms per unit timein minutes (.ANG./min). Guidance on the measurement and calculation forpolishing rate for semiconductor part is found in U.S. Pat. No.5,695,601 to Kodera et. al. issued in 1997 and is included herein in itsentirety for illustrative guidance. Methods to measure and monitorfinishing rate in angstroms per minute is generally known to thoseskilled in the relevant art.

An average finishing rate range is preferred, particularly forworkpieces requiring very high precision finishing such as in processelectronic wafers. Average cut rate is used as a preferred metric todescribe preferred finishing rates. Average cut rate is metric generallyknown to those skilled in the art. For electronic workpieces, such aswafers, a cut rate of from 100 to 25,000 Angstroms per minute on atleast a portion of the workpiece is preferred and a cut rate of from 200to 15,000 Angstroms per minute on at least a portion of the workpiece ismore preferred and a cut rate of from 500 to 10,000 Angstroms per minuteon at least a portion of the workpiece is even more preferred and a cutrate of from 500 to 7,000 Angstroms per minute on at least a portion ofthe workpiece is even more particularly preferred and a cut rate of from1,000 to 5,000 Angstroms per minute on at least a portion of theworkpiece is most preferred. A finishing rate of at least 100 Angstromsper minute for at least one of the regions on the surface of theworkpiece being finished is preferred and a finishing rate of at least200 Angstroms per minute for at least one of the materials on thesurface of the workpiece being finished is preferred and a finishingrate of at least 500 Angstroms per minute for at least one of theregions on the surface of the workpiece being finished is more preferredand a finishing rate of at least 1000 Angstroms per minute for at leastone of the regions on the surface of the workpiece being finished iseven more preferred where significant removal of a surface region isdesired. During finishing there are often regions where the operatordesires that the finishing stop when reached such when removing aconductive region (such as a metallic region) over a non conductiveregion (such as a silicon dioxide region). For regions where it isdesirable to stop finishing (such as the silicon dioxide region exampleabove), a finishing rate of at most 1000 Angstroms per minute for atleast one of the regions on the surface of the workpiece being finishedis preferred and a finishing rate of at most 500 Angstroms per minutefor at most one of the materials on the surface of the workpiece beingfinished is preferred and a finishing rate of at most 200 Angstroms perminute for at least one of the regions on the surface of the workpiecebeing finished is more preferred and a finishing rate of at most 100Angstroms per minute for at least one of the regions on the surface ofthe workpiece being finished is even more preferred where significantremoval of a surface region is desired. The finishing rate can becontrolled lubricants and with the process control parameters discussedherein.

Using finishing of this invention to remove raised surface perturbationsand/or surface imperfections on the workpiece surface being finished ispreferred. Using the method of this invention to finish a workpiece,especially a semiconductor wafer, at a planarizing rate and/orplanarizing uniformity according to a controllable set of finishingcontrol parameters that upon variation change the planarizing rateand/or planarizing uniformity and wherein the finishing parameters of atleast two finishing control parameters is more preferred. Using themethod of this invention to polish a workpiece, especially asemiconductor wafer, wherein an finishing sensor subsystem changes anoperative finishing composition feed mechanism in situ is preferred. Thefinishing sensor subsystem and/or friction sensor subsystem ispreferably operatively connected electrically to the operativelubrication feed mechanism.

Using the method of this invention to polish or planarize a workpiece,especially a semiconductor wafer, supplying lubrication moderated by afinishing element having at least two layers is preferred. Morepreferably the finishing element having at least two layers wherein thefinishing surface layer has a higher hardness than the subsurface layeris more preferred, particularly for planarizing. A finishing elementhaving at least two layers wherein a finishing surface layer has a lowerhardness than the subsurface layer is also preferred, particularly forpolishing.

Changes in boundary lubricant, particularly active boundary lubrication,at the operative finishing interface can significantly affect finishingrates and finishing performance in ways that current workpiece sensorscannot handle effectively. For instance, current workpiece sensorscannot effectively monitor and control multiple real time changes inboundary lubricant, particularly active boundary lubrication, andchanges in finishing such as finishing rates. This renders prior artworkpiece sensors lubricating boundary layer for controlling andstopping finishing where friction is adjusted or changed in real time.Friction sensor subsystems as indicated above can help to improve realtime control wherein the boundary lubrication is changed during thefinishing cycle time. Preferred friction sensors include opticalfriction sensors and non-optical friction sensors. An optical frictionsensor is a preferred friction sensor. Non-limiting preferred examplesof optical friction sensors is an infrared thermal sensing unit such asa infrared camera and a laser adjusted to read minute changes ofmovement friction sensor probe to a perturbation. A non-optical sensingfriction sensor is a preferred friction sensor. Non-limiting preferredexamples of non-optical friction sensors include thermistors,thermocouples, diodes, thin conducting films, and thin metallicconducting films. Electrical performance versus temperature such asconductivity, voltage, and resistance is measured. Those skilled in thethermal measurement arts are generally familiar with non-optical thermalsensors and their use. A change in friction can be detected by rotatingthe friction sensor in operative friction contact with the finishingelement finishing surface with electric motors and measuring currentchanges on one or both motors. The current changes related to frictionchanges can then be used to produce a signal to operate the frictionsensor subsystem. Where the material changes with depth during thefinishing of workpiece being finished, one can monitor friction changeswith the friction sensor probe having dissimilar materials even withactive lubrication and therefore readily detect the end point. As anadditional example, the finishing rate can be correlated with theinstantaneous boundary lubrication at the operative finishing interface,a mathematical equation can be developed to monitor finishing rate withinstantaneous lubrication information from the secondary sensor and theprocessor then in real time calculates finishing rates and indicates theend point to the controller. The friction sensor probes of thisinvention are particularly for sensing and controlling changes in thelubricating boundary layer and resulting changes in friction therefrom.The control subsystems can readily help to make in situ process changesto improve finishing and reduce manufacturing costs.

Changing the pressure at the operative finishing interface can changethe lubricating boundary layer performance. Changing the motion such asspeed or type of motion can change the lubricating boundary layerperformance. Changing the pressure applied in the operative finishinginterface, either total pressure or regional pressure can change thelubricating boundary layer performance. Changing the temperature in theoperative finishing interface, either average or regional temperaturescan change the lubricating boundary layer performance. Changing theconcentration of the boundary lubricant by changing finishing elementscan change the lubricating boundary performance. Changing the chemistryof the boundary lubricant in the finishing element can change thelubricating boundary performance by changing finishing elements duringthe finishing cycle time can be a lubricating control parameter. Theabove parameters comprise preferred lubricating boundary layer controlparameters and can be used to effect changes in the finishing of theworkpiece surface being finished. Changing a lubricating boundary layercontrol parameter to change the tangential force of friction at theoperative finishing interface is preferred and changing a lubricatingboundary layer control parameter to change the tangential force offriction at a region in the operative finishing interface is morepreferred and changing a lubricating boundary layer control parameter tochange the tangential force of friction in at least two regions of theoperative finishing interface is even more preferred. Changing a controlparameter to change the tangential force of friction at the operativefinishing interface is preferred and changing a control parameter tochange the tangential force of friction at a region in the operativefinishing interface is more preferred and changing a control parameterto change the tangential force of friction in at least two regions ofthe operative finishing interface is even more preferred. Changing thelubricating boundary control parameters at least once during thefinishing cycle time is preferred and changing the lubricating controlparameters at least twice during the finishing cycle time is morepreferred. Changing the lubricating boundary layer control parameters insitu is preferred and changing the lubricating boundary layer controlparameters in situ with a subsystem controller is more preferred andchanging the lubricating boundary layer control parameters in situ witha controller based on a secondary friction sensor signal is even morepreferred.

Changing at least one control parameter in situ is preferred andchanging at least one control parameter in situ with a subsystemcontroller is more preferred and changing at least one control parameterin situ with a controller based on a friction sensor signal is even morepreferred. Controlling at least one control parameter in situ ispreferred and controlling at least one control parameter in situ with asubsystem controller is more preferred and controlling at least onecontrol parameter in situ with a controller based on a friction sensorsignal is even more preferred. Changing at least one control parameterin situ is preferred and changing at least one control parameter in situwith a subsystem controller is more preferred and changing at least onecontrol parameter in situ with a controller based on a secondaryfriction sensor signal is preferred. Controlling at least one controlparameter in situ is preferred and controlling at least one controlparameter in situ with a subsystem controller is more preferred andcontrolling at least one control parameter in situ with a controllerbased on a secondary friction sensor signal is even more preferred.Evaluating finishing control parameters in situ for improved adjustmentusing finishing control is preferred and using the finishing controlparameters in situ at least in part for this improved adjustment offinishing control is more preferred. Evaluating cost of manufactureparameter(s) in situ for improved adjustment of finishing control ispreferred and using the cost of manufacture parameters in situ at leastin part for this improved adjustment of finishing control is morepreferred.

Applying higher pressure in the unwanted raised region on thesemiconductor wafer surface compared to pressure applied to the regionbelow the unwanted raised region causing the boundary layer lubricationthickness to be less on the unwanted raised region and the boundarylayer lubrication thickness to be greater on at least portion of thesemiconductor wafer surface below the raised region is a preferredmethod for differential finishing rates. Applying higher pressure in theunwanted raised region on the semiconductor wafer surface compared topressure applied to the region below the unwanted raised region causingthe boundary layer lubrication thickness to be less on the unwantedraised region and a higher temperature on the unwanted raised region andthe boundary layer lubrication thickness to be greater on at leastportion of the semiconductor wafer surface below the raised region and alower temperature is more preferred method for differential finishingrates.

Applying higher pressure in the unwanted raised region on thesemiconductor wafer surface compared to pressure applied to the regionbelow the unwanted raised region causing the organic lubricating filmthickness to be less on the unwanted raised region and the organiclubricating film thickness to be greater on at least portion of thesemiconductor wafer surface below the raised region is a preferredmethod for differential finishing rates. Applying higher pressure in theunwanted raised region on the semiconductor wafer surface compared topressure applied to the region below the unwanted raised region causingthe organic lubricating film thickness to be less on the unwanted raisedregion and a higher temperature on the unwanted raised region and theorganic lubricating film thickness to be greater on at least portion ofthe semiconductor wafer surface below the raised region and a lowertemperature is more preferred method for differential finishing rates.

Applying an operative finishing motion in the operative finishinginterface forming an organic lubricating layer such that a tangentialfriction force is created in the operative finishing interface which isdependent on lubricant properties other than lubricant viscosity ispreferred. Applying an operative finishing motion in the operativefinishing interface forming an organic lubricating layer such that atangential friction force is created in the operative finishinginterface which depends on lubricant properties other than lubricantviscosity is preferred. Applying an operative finishing motion in theoperative finishing interface forming a differential organic lubricatinglayer such that a plurality of different tangential friction forces arecreated in different regions of the operative finishing interface andwherein the plurality of the different tangential friction forces aredependent on lubricant properties other than lubricant viscosity is morepreferred. Applying the greater tangential friction force in theunwanted raised region of the semiconductor wafer surface being finishedand also applying the lower tangential friction force to a region belowand proximate to the unwanted raised region of the semiconductor wafersurface being finished is also more preferred. By creating this type oflubricating layer, finishing of the semiconductor wafer can beaccomplished with good finishing rates and reduced unwanted surfacedefects. Planarization can be improved. Within die nonuniformity can beimproved. By in situ improving cost of manufacture parameters, the costof finishing of a semiconductor can be reduced.

A method which updates the cost of manufacture control parameters,look-up tables, algorithms, or control logic consistent with the currentmanufacturing step is preferred. A cost of manufacture controlparameter(s) comprises a preferred cost of manufacture information. Amethod which updates the cost of manufacture control parameters, look-uptables, algorithms, or control logic consistent with the currentmanufacturing step while evaluating prior manufacturing steps (such ascompleted manufacturing steps) is preferred. A method which updates thecost of manufacture control parameters, look-up tables, algorithms, orcontrol logic consistent with the current manufacturing step whileevaluating future manufacturing steps is preferred. A method whichupdates the cost of manufacture control parameters, look-up tables,algorithms, or control logic consistent with the current manufacturingstep while evaluating both prior and future manufacturing steps is morepreferred. A tracking code is a preferred method to aid evaluation ofprior, current, and future manufacture steps. The tracking code can beby individual semiconductor wafer and/or by semiconductor batch. Thiscan facilitate low cost manufacture and improved in situ control oflubrication (such as lubricating films and/or active lubrication). Thisis preferred for multi-level semiconductor wafer processing because onelevel finishing can affect the next level finishing. Further, the typeand composition of each layer can impact the improved real time controlof finishing such as where a layer has a reduce strength such as aporous layer.

A lubrication control parameter is a parameter which affects thelubrication of the operative finishing interface. A lubricating controlparameter is a parameter which affects the lubrication in the operativefinishing interface—such as regional lubrication or average lubrication.A lubricating control parameter selected from the group consisting ofthe lubricant chemistry, lubricant concentration, lubricant transferrate, operative finishing interface temperature, operative finishinginterface pressure, and operative finishing interface motion is apreferred group of lubricating boundary layer control parameters. Aparameter selected from the group consisting of the local lubricantchemistry, local lubricant concentration, local lubricant feed rate,local operative finishing interface temperature, local operativefinishing interface pressure, and local operative finishing interfacemotion is also a preferred group of lubricating control parameters.

A lubrication control parameter is a parameter which affects thelubrication of the operative finishing interface. A boundary lubricationcontrol parameter is a parameter which affects the lubrication such asthe lubricating boundary layer or lubricating boundary film in theoperative finishing interface. A parameter selected from the groupconsisting of the lubricant chemistry, lubricant concentration,lubricant transfer rate, operative finishing interface temperature,operative finishing interface pressure, and operative finishinginterface motion is a preferred group of lubricating boundary layercontrol parameters. A parameter selected from the group consisting ofthe local lubricant chemistry, local lubricant concentration, locallubricant feed rate, local operative finishing interface temperature,local operative finishing interface pressure, and local operativefinishing interface motion is a preferred group of local lubricatinglayer control parameters. An example of a local operative finishinginterface pressure and local lubricating boundary layer is localpressure and local lubrication.

Supplying an organic lubricant for a portion of finishing cycle time ispreferred. Supplying an organic lubricant for a secondary finishing stepafter a first finishing step free of lubricant can be preferred. Usingtwo finishing steps, one with lubricant and one free of lubricant canreduce unwanted surface damage when finishing a semiconductor wafer.Using two finishing steps can also increase the finishing rate. Areactive boundary lubricant is a preferred lubricant. A lubricatingboundary layer comprising physical adsorption (physisorption) of thelubricant molecules to the semiconductor surface being finished is apreferred lubricating boundary layer. Van der Waals surface forces are apreferred example of physical adsorption. Dipole-dipole interactionbetween the boundary lubricant and the semiconductor wafer surface beingfinished is a preferred example of physical adsorption. A reversibledipole-dipole interaction between the boundary lubricant and thesemiconductor wafer surface is an example of a more preferred physicaladsorption lubricating boundary layer. An organic alcohol is anillustrative preferred example. A polar organic molecule containing thehetereoatom oxygen is preferred. An organic boundary lubricating layerwhich is a solid film generally has a greater ability to separate thefinishing element finishing surface from the semiconductor wafer surfacebeing finished. A heat of adsorption of from 2,000 to 10,000 cal/mole ispreferred for physisorption. A physisorption organic boundarylubricating layer is a preferred reversible lubricating layer.

A lubricating boundary layer comprising chemisorption of lubricantmolecules to the semiconductor wafer being finished is a preferredlubricating boundary layer. In chemisorption, chemical bonds hold theboundary lubricants to the semiconductor wafer surface being finished.As an illustrative example, a reaction of stearic acid forms a “metalsoap” thin film on a metal surface. An organic carboxylic acid is apreferred example. Further, the “metal soap” can have a higher meltingtemperature and thus form regional areas of an organic boundary layerhaving higher temperature lubricating capacity as discussed furtherherein below. A heat of absorption of between 10,000 to 100,000 cal/moleis preferred for chemisorption.

A solid film organic boundary lubricating layer generally has a greaterability to separate the finishing element finishing surface from thesemiconductor wafer surface being finished. A solid film organicboundary lubricating layer can thus help reduce finishing rates asmeasured in angstroms per minute (compared to a liquid film). A liquidfilm organic boundary lubricating layer generally has a lower ability toseparate the finishing element finishing surface from the semiconductorwafer surface being finished can thus help increase finishing rates asmeasured in angstroms per minute (compared to a solid film). The sameboundary lubricant can form either solid film organic boundarylubricating layer or a liquid film organic boundary lubricating layerdepending on the operative finishing interface process conditions. Areversible organic boundary lubricating layer (which can change fromsolid to liquid to solid depending on processing conditions such astemperature) is preferred. Finishing a heterogeneous semiconductor wafersurface having at least one unwanted raised region wherein thelubricating boundary layer comprises a liquid film on the unwantedraised region and the lubricating boundary layer comprises a solid filmin the region below and proximate to the unwanted raised region ispreferred. Finishing a heterogeneous semiconductor wafer surface havingat least one unwanted raised region wherein the lubricating boundarylayer comprises a higher temperature liquid film on the unwanted raisedregion and the lubricating boundary layer comprises a lower temperaturesolid film in the region below and proximate to the unwanted raisedregion is preferred. Applying an operative finishing motion to theoperative finishing interface forming a heterogeneous temperatureprofile on the semiconductor wafer surface being finishing and whereinthe temperature is higher on a plurality of unwanted raised regions ofthe heterogeneous semiconductor wafer surface and the temperature islower proximate to and below the plurality of unwanted raised regions ofthe heterogeneous semiconductor wafer surface and further the pluralityof unwanted raised regions have a liquid lubricating films on them andthe regions proximate to and below the plurality of unwanted raisedregions solid lubricating films on them. See for instance ReferenceNumerals 802 (unwanted raised region) and 804 (region proximate to andbelow the unwanted raised region) for further helpful guidance. Anexample is octadecyl alcohol forms a solid lubricant film on copper atabout 20 to 55 degrees centigrade and a liquid film on copper at about65 to 110 degrees centigrade. An organic boundary lubricating layer thatis capable of changing from a solid film to a liquid film in theoperative finishing interface temperature range during a finishing cycletime is preferred. An organic boundary lubricating layer that is capableof changing from a solid film to a different physical form in theoperative finishing interface temperature range during a finishing cycletime is preferred. An organic boundary lubricating layer that is capableof changing from a liquid film to a different physical form in theoperative finishing interface temperature range during a finishing cycletime is preferred. An organic boundary lubricating layer that is capableof changing from a solid film to a liquid film in the temperature rangefrom 20 to 100 degrees centigrade is more preferred. By increasing thefinishing rate in the unwanted raised region and lowering the finishingrate in the region proximate to and below the unwanted raised region,planarization can be improved. Changing the lubricating boundary layerfilm physical form by changing at least one lubrication controlparameter in situ based on feed back information from a lubricationcontrol subsystem having an energy change sensor is preferred.Controlling the lubricating boundary layer film physical form bychanging at least one lubrication control parameter in situ based onfeed back information from a lubrication control subsystem having anenergy change sensor is more preferred. Controlling the lubricatingboundary layer film by changing at least one lubrication controlparameter in real time during at least of portion of the finishing cycletime based on feed back information from a lubrication control subsystemis preferred. Controlling the lubricating boundary layer film physicalform by changing at least one lubrication control parameter in real timeduring at least of portion of the finishing cycle time based on feedback information from a lubrication control subsystem having an energychange sensor is very preferred. Increasing temperature on the unwantedraised region on the semiconductor wafer surface compared to thetemperature on the region below the unwanted raised region forming thelubricating boundary layer liquid film on the unwanted raised region andthe lubricating boundary layer solid film on at least a portion of thesemiconductor wafer surface below the raised region is preferred.Increasing temperature with frictional heat on the unwanted raisedregion on the semiconductor wafer surface compared to the temperature onthe region below the unwanted raised region forming the lubricatingboundary layer liquid film on the unwanted raised region and thelubricating boundary layer solid film on at least a portion of thesemiconductor wafer surface below the raised region is more preferred.Using and controlling the lubricating boundary layer physical form canhelp customize finishing for the particular semiconductor wafers needingfinishing. The operative motion interacts with the lubricating boundarylayer in a new and useful way to finish a workpiece surface, preferablya semiconductor wafer surface.

A preferred embodiment of this invention is directed to a factory formanufacturing a workpiece comprising an at least one finishingapparatus; an at least one piece of workpiece fabrication machineryother than the at least one finishing apparatus; an at least one pieceof metrology equipment; an at least one processor; an at least oneprocessor readable memory device; an at least one operative computerizednetwork connecting the at least one processor, the at least oneprocessor readable memory device, the at least one finishing apparatus,the at least one piece of workpiece fabrication machinery, and the atleast one piece of metrology equipment; an at least one operative sensorfor sensing an in situ finishing information; an at least one operativecontroller for controlling manufacturing; and the at least one processorreadable memory device that includes (i) an in-process cost ofmanufacture information, (ii) the in situ finishing information, (iii)an at least one process model, (iv) an information from the at least onepiece of metrology equipment, (v) an information at least in partrelated to the at least one workpiece fabrication machinery, and (vi)encoded instructions that when executed by the at least one processordetermines a real time control for the at least one operative controllerusing the in-process cost of manufacture information, the in situfinishing information, the at least one process model, the informationat least in part related to the at least one workpiece fabricationmachinery, and the information from the at least one piece of metrologyequipment.

A preferred embodiment of this invention is directed to a method formanufacturing a workpiece, the method comprising providing amanufacturing real time control information for a finishing operationpreviously used by an at least one processor and wherein themanufacturing real time control information is at least in part derivedfrom an operative network including an at least one finishing apparatus,an at least one piece of workpiece fabrication machinery other than theat least one finishing apparatus, and an at least one piece of metrologyequipment, and wherein the manufacturing real time control informationincludes information members comprising (i) an in-process cost ofmanufacture information related to the finishing operation, (ii) aninformation at least in part derived from the at least one piece ofworkpiece fabrication machinery other than the at least one finishingapparatus, (iii) an information at least in part derived from the atleast one piece of metrology equipment, (iv) an in situ finishinginformation, (v) an at least one manufacturing control parameter relatedto the finishing operation, and (vi) an at least one process model;supplying the manufacturing real time control information to an at leastone computer; using the at least one computer to determine a change toan at least one information member in the manufacturing real timecontrol information; changing an at least one information member in themanufacturing real time control information forming a changedmanufacturing real time control information; and supplying the changedmanufacturing real time control information for a real time control foruse in an at least one operative controller for controllingmanufacturing related to the finishing operation.

A preferred embodiment of this invention is directed to a method formanufacturing, the method comprising providing a manufacturing real timecontrol information for a finishing operation previously used by an atleast one processor and wherein the manufacturing real time controlinformation is at least in part derived from an operative networkincluding an at least one finishing apparatus, an at least one piece ofworkpiece fabrication machinery other than the at least one finishingapparatus, and an at least one piece of metrology equipment, and whereinthe manufacturing real time control information includes informationmembers comprising (i) a tracked and updated in-process cost ofmanufacture information including a multiplicity of activity based costof manufacture information on a current workpiece and on priorworkpieces related to the finishing operation, (ii) an information atleast in part derived from the at least one piece of workpiecefabrication machinery other than the at least one finishing apparatus,(iii) an information at least in part derived from the at least onepiece of metrology equipment, (iv) an in situ finishing information, (v)an at least one manufacturing control parameter related to the finishingoperation, and (vi) an information at least in part derived from amultiplicity of process models related to the finishing operation;supplying the manufacturing real time control information to an at leastone computer; using the at least one computer to determine a change toan at least one information member in the manufacturing real timecontrol information; changing an at least one information member in themanufacturing real time control information forming a changedmanufacturing real time control information; and supplying the changedmanufacturing real time control information for a real time control foruse in an at least one operative controller for controllingmanufacturing related to the finishing operation.

A preferred embodiment of this invention is directed to a factory formanufacturing a workpiece comprising an at least one finishingapparatus; a patterning apparatus; an apparatus for forming a low-kdielectric on the workpiece; an at least one piece of metrologyequipment; an at least one processor; an at least one processor readablememory device; an at least one operative computerized network connectingthe at least one processor, the at least one processor readable memorydevice, the at least one finishing apparatus, the patterning apparatus,the apparatus for forming a low-k dielectric on the workpiece, and theat least one piece of metrology equipment; an at least one operativesensor for sensing an in situ finishing information; an at least oneoperative controller for controlling manufacturing; and the at least oneprocessor readable memory device that includes (i) an in-process cost ofmanufacture information, (ii) the in situ finishing information, (iii)an at least one process model, (iv) an information from the at least onepiece of metrology equipment, (v) an information from a patterningapparatus, and (vi) an information from an apparatus for forming a low-kdielectric on the workpiece. A factory wherein the at least oneprocessor readable memory device that additionally includes encodedinstructions that when executed by the at least one processor determinesa process control for the at least one operative controller using thein-process cost of manufacture information, the in situ finishinginformation, the at least one process model, the information from the atleast one piece of metrology equipment, the information from apatterning apparatus, and the information from an apparatus for forminga low-k dielectric on the workpiece is more preferred.

A preferred embodiment of this invention is directed to a method forfinishing a workpiece comprising (a) providing an at least one operativefinishing apparatus; (b) providing an at least one piece of workpiecefabrication machinery other than the at least one finishing apparatus;(c) providing an at least one piece of metrology equipment; (d)providing an at least one processor; (e) providing an at least oneprocessor readable memory device; (f) forming at least one operativecomputerized network connecting the at least one processor, the at leastone processor readable memory device, the at least one finishingapparatus, the at least one piece of workpiece fabrication machinery,and the at least one piece of metrology equipment; (g) providing an atleast one operative sensor for sensing an in situ finishing information;(h) providing an at least one operative controller for controllingmanufacturing; and (g) applying an operative finishing energy to theworkpiece; (i) sensing an in situ finishing information during finishingwith the at least one operative sensor during a finishing cycle time;(j) evaluating a multiplicity of finishing information, and at least aplurality of the multiplicity of the finishing information have aneffect on a cost of manufacture of the workpiece; (k) determining achange for at least one process control parameter using (i) a trackedand updated in-process cost of manufacture information including amultiplicity of activity based cost of manufacture information on acurrent workpiece and on prior workpieces related to the finishingoperation, (ii) an information at least in part derived from the atleast one piece of workpiece fabrication machinery other than the atleast one finishing apparatus, (iii) an information at least in partderived from the at least one piece of metrology equipment, (iv) an insitu finishing information, (v) an at least one manufacturing controlparameter related to the finishing operation, and (vi) an information atleast in part derived from a multiplicity of process models related tothe finishing operation, and (vii) the (j) of evaluating themultiplicity of finishing information; and (l) changing the at least onecontrol parameter to change the finishing of the workpiece; (m) storingat a least a portion of the information in the (g) forming a family ofstored information; (n) using at least in part the family of storedinformation to determine a change for an at least one particular memberof the family of stored information; (o) changing the at least oneparticular member in the family of stored information forming a changedfamily of stored information; and (p) using the changed family of storedinformation.

A preferred embodiment of this invention is directed to a method formanufacturing, the method comprising providing a manufacturing processcontrol information for a finishing operation previously used by an atleast one processor and wherein the manufacturing process controlinformation is at least in part related to an operative networkincluding an at least one finishing apparatus, a patterning apparatus,an apparatus for forming a low-k dielectric on the workpiece, and an atleast one piece of metrology equipment, the manufacturing processcontrol information including information members comprising (i) atracked and updated in-process cost of manufacture information includinga multiplicity of activity based cost of manufacture information on acurrent workpiece and on prior workpieces related to the finishingoperation, (ii) an information at least in part derived from thepatterning apparatus, (iii) an information at least in part derived fromthe apparatus for forming a low-k dielectric on the workpiece, (iv) aninformation at least in part derived from the at least one piece ofmetrology equipment, (v) an information at least in part derived from anin situ finishing information, and (vi) an information at least in partderived from a multiplicity of process models related to the finishingoperation; supplying the manufacturing process control information to anat least one computer; using the at least one computer to determine achange to an at least one information member in the manufacturingprocess control information; changing an at least one information memberin the manufacturing process control information forming a changedmanufacturing process control information; and supplying the changedmanufacturing process control information for predictive control for usein an at least one operative controller for controlling manufacturingrelated to the finishing operation.

Information at least in part related to an apparatus and/or a network ofapparatus preferred for process control. Information from an apparatusand/or a network of apparatus more preferred for process control.Information derived from an apparatus and/or a network of apparatus evenpreferred for process control. Information at least in part related tometrology equipment preferred for process control. Information frommetrology equipment more preferred for process control. Informationderived from metrology equipment even preferred for process control.

Information at least in part related to an apparatus and/or a network ofapparatus preferred for predictive control. Information from anapparatus and/or a network of apparatus more preferred for predictivecontrol. Information derived from an apparatus and/or a network ofapparatus even preferred for predictive control. Information at least inpart related to metrology equipment preferred for predictive control.Information from metrology equipment more preferred for predictivecontrol. Information derived from metrology equipment even preferred forpredictive control.

Information at least in part related to an apparatus and/or a network ofapparatus preferred for real time control. Information from an apparatusand/or a network of apparatus more preferred for real time control.Information derived from an apparatus and/or a network of apparatus evenpreferred for real time control. Information at least in part related tometrology equipment preferred for real time control. Information frommetrology equipment more preferred for real time control. Informationderived from metrology equipment even preferred for real time control.

A preferred embodiment of this invention is directed to an apparatuscomprising a finishing surface; a mechanism for applying an operativefinishing motion for finishing a workpiece; and at least one operativeconnection connecting the apparatus to at least one processor, at leastone operative sensor for sensing in situ finishing information, at leastone controller for controlling the apparatus, and at least one processorreadable memory device that includes (i) at least in part a cost ofmanufacture information, (ii) the in situ finishing information, and(iii) encoded instructions that when executed by the at least oneprocessor determines a process control for the at least one controllerwith the at least in part a cost of manufacture information and the insitu finishing information.

A preferred embodiment of this invention is directed to a method offinishing of a workpiece having a workpiece surface comprising providinga finishing surface; positioning the workpiece surface proximate to thefinishing surface; providing at least one operative sensor for sensingin situ finishing information; applying an operative finishing motionbetween the workpiece surface and the finishing surface; sensing an insitu finishing information with the operative sensor and sending the insitu finishing information to a processor; evaluating at least oneprocess control parameter for adjustment using i) an at least oneprocessor, ii) an at least in part a cost of manufacture information,and iii) the in situ finishing information; and controlling the at leastone process control parameter to change the finishing of the workpieceusing the at least in part the cost of manufacture information.

A preferred embodiment of this invention is directed to a method forfinishing a workpiece comprising (A) providing a workpiece having aworkpiece surface and wherein the workpiece surface has a first uniformregion and a second uniform region; (B) providing a finishing surface;(C) providing at least three operative process sensors, an at least oneprocessor, and a controller; (D) applying an operative finishing motionto an interface between the workpiece surface and the finishing surfaceand wherein the interface includes the first uniform region; (E) sensingan in situ finishing information during finishing with the at leastthree operative process sensors during a finishing cycle time; (F)evaluating a multiplicity of finishing information, and at least aplurality of the multiplicity of the finishing information have aneffect on a cost of manufacture of the workpiece; (G) determining achange for at least one process control parameter using (i) the at leastone processor, (ii) an at least in part a tracked information, (iii) acost of manufacture model including the tracked and updated in-processcost of manufacture information including the multiplicity of activitybased cost of manufacture information on the current workpiece and onthe prior workpieces related to the finishing operation,

(iv) the in situ finishing information, and (v) the (F) of evaluatingthe multiplicity of finishing information; and (H) changing the at leastone control parameter to change the finishing the workpiece surface inat least the first uniform region; (I) storing at a least a portion ofthe information in the (G) forming a family of stored information; (J)using at least in part the family of stored information to determine achange for an at least one particular member of the family of storedinformation; (K) changing the at least one particular member in thefamily of stored information forming a changed family of storedinformation; and (L) using the changed family of stored information.

A preferred embodiment of this invention is directed to a method offinishing having a finishing cycle time comprising providing asemiconductor wafer having a semiconductor wafer surface and a trackingcode; providing a finishing element finishing surface; positioning thesemiconductor wafer surface proximate to the finishing element finishingsurface; providing a lubricant to an interface formed between thesemiconductor wafer surface and the finishing element finishing surface;providing at least one operative sensor for gaining information aboutthe finishing; applying an operative finishing motion between thesemiconductor wafer surface and the finishing element finishing surfaceforming an operative finishing interface having a friction; sensing thefriction with the operative friction sensor and sending the informationabout the friction to a processor having access to current cost ofmanufacture parameters; evaluating an at least two process controlparameters for improved adjustment using at least in part a minimum of aplurality of the current cost of manufacture parameters; and controllingthe at least two process control parameters to improve the cost ofmanufacture of the semiconductor wafer.

A preferred embodiment of this invention is directed to a method offinishing having a finishing cycle time comprising providing a workpiecehaving a workpiece surface and a tracking code; providing a finishingsurface; positioning the workpiece surface proximate to the finishingsurface; providing a lubricant to an interface formed between theworkpiece surface and the finishing surface; providing at least oneoperative sensor for sensing in situ finishing information; applying anoperative finishing motion between the workpiece surface and thefinishing surface forming an operative finishing interface having afriction; evaluating an at least two process control parameters forimproved adjustment using at least in part a minimum of a plurality ofthe current cost of manufacture parameters; and controlling the at leasttwo process control parameters to change the profitability of theworkpiece.

A preferred embodiment of this invention is directed a method offinishing of a semiconductor wafer surface comprising providing afinishing surface; positioning the semiconductor wafer surface proximateto the finishing surface; providing a finishing composition to aninterface formed between the finishing surface and the semiconductorwafer surface; providing at least one operative sensor for sensing insitu finishing information about the finishing; applying an operativefinishing motion between the semiconductor wafer surface and thefinishing element finishing surface forming an operative finishinginterface; sensing the in situ finishing information of thesemiconductor wafer surface with the operative sensor and sending theprogress of finishing information about the finishing to a processorhaving access to a cost of manufacture information; evaluating at leastone process control parameter for improved adjustment using at least inpart the cost of manufacture information and the in situ finishinginformation; and controlling the at least one process control parameterto change the finishing of the semiconductor wafer.

A preferred embodiment of this invention is directed a method offinishing of a semiconductor wafer surface comprising providing afinishing surface; positioning the semiconductor wafer surface proximateto the finishing surface; providing a finishing composition to aninterface formed between the finishing surface and the semiconductorwafer surface; providing at least one operative sensor for sensing insitu finishing information about the finishing; applying an operativefinishing motion between the semiconductor wafer surface and thefinishing element finishing surface forming an operative finishinginterface; sensing the in situ finishing information of thesemiconductor wafer surface with the operative sensor and sending theprogress of finishing information about the finishing to a processorhaving access to a yield information at least in part related to amonetary system; evaluating at least one process control parameter forimproved adjustment using at least in part the yield information and thein situ finishing information; and controlling the at least one processcontrol parameter to change the finishing of the semiconductor wafer.

A preferred embodiment of this invention is directed a method offinishing of a semiconductor wafer surface comprising providing afinishing surface; positioning the semiconductor wafer surface proximateto the finishing surface; providing a finishing composition to aninterface formed between the finishing surface and the semiconductorwafer surface; providing at least one operative sensor for sensing insitu finishing information about the finishing; applying an operativefinishing motion between the semiconductor wafer surface and thefinishing element finishing surface forming an operative finishinginterface; sensing the in situ finishing information of thesemiconductor wafer surface with the operative sensor and sending theprogress of finishing information about the finishing to a processorhaving access to a yield information at least in part related tomonetary value; evaluating at least one process control parameter forimproved adjustment using at least in part the yield information and thein situ finishing information; and controlling the at least one processcontrol parameter to change the finishing of the semiconductor wafer.

A method of finishing wherein the controlling and adjusting the processcontrol parameters changes either one or both the tangential force offriction or the coefficient of friction in the operative finishinginterface is preferred and wherein adjusting the process controlparameters change one or both the tangential force of friction or thecoefficient of friction two times in the operative finishing interfaceduring the finishing cycle time is more preferred and wherein adjustingthe process control parameters change one or both the tangential forceof friction or the coefficient of friction four times in the operativefinishing interface during the finishing cycle time is even morepreferred. A plurality of friction sensors generally aids this advancedcontrol. Use of a plurality of cost of manufacture parameters alsogenerally aids this advanced control to reduce the finishing cost of thesemiconductor wafer. Some further nonlimiting examples follow. A methodof finishing wherein the semiconductor wafer surface has at least oneuniform region and controlling and adjusting 4 times a minimum of threeprocess control parameters changes a coefficient of friction in at leastthe uniform region of the semiconductor wafer surface at least two timesduring the finishing cycle time is preferred. A method of finishingwherein the semiconductor wafer surface has at least one uniform regionwherein the controlling and adjusting 4 times a minimum of two processcontrol parameters changes in a tangential force of friction in at leasta region of the operative finishing interface at least two times duringthe finishing cycle time is preferred.

A semiconductor wafers having low-k dielectric layers(s) are preferredworkpiece. Illustrative nonlimiting examples of low-k dielectrics arelow-k polymeric materials, low-k porous materials, and low-k foammaterials. As used herein, a low-k dielectric has at most a k range ofless than 3.5 and more preferably less than 3.0. Illustrative examplesinclude doped oxides, organic polymers, highly fluorinated organicpolymers, and porous materials. Low-k dielectric materials are generallyknown to those skilled in the semiconductor wafer arts.

For finishing of semiconductor wafers having low-k dielectric layers anorganic boundary lubricating layer is preferred. Finishing asemiconductor wafer using the friction control subsystem and methodsdiscussed herein can improve finishing. An organic lubricating boundarylayer can help reduce harmful tangential friction forces. Illustrativenonlimiting examples of low-k dielectrics are low-k polymeric materials,low-k porous materials, and low-k foam materials. A preferred low-kdielectric can be a spin-on dielectric. “SiLK” and “FLARE” areillustrative examples of spin-on low-k dielectrics. A preferred low-k isa CVD low-k film. “Black Diamond” and SiOF are illustrative examples ofCVD low-k films. A preferred low-k dielectric is a porous film. Xerogelsand aerogels are illustrative examples of low-k porous films.Illustrative examples include doped oxides, organic polymers, highlyfluorinated organic polymers, and porous materials.

Given the guidance and disclosure herein, one of skilled in the art cangenerally see that the friction sensor subsystems and finishing sensorsubsystems can easily be used to detect changes to the finishing elementfinishing surface by monitoring follow. A method of finishing whereinthe semiconductor wafer surface has at least one uniform region andcontrolling and adjusting 4 times a minimum of three process controlparameters changes a coefficient of friction in at least the uniformregion of the semiconductor wafer surface at least two times during thefinishing cycle time is preferred. A method of finishing wherein thesemiconductor wafer surface has at least one uniform region wherein thecontrolling and adjusting 4 times a minimum of two process controlparameters changes in a tangential force of friction in at least aregion of the operative finishing interface at least two times duringthe finishing cycle time is preferred.

A semiconductor wafers having low-k dielectric layers(s) are preferredworkpiece. Illustrative nonlimiting examples of low-k dielectrics arelow-k polymeric materials, low-k porous materials, and low-k foammaterials. As used herein, a low-k dielectric has at most a k range ofless than 3.5 and more preferably less than 3.0. Illustrative examplesinclude doped oxides, organic polymers, highly fluorinated organicpolymers, and porous materials. Low-k dielectric materials are generallyknown to those skilled in the semiconductor wafer arts.

For finishing of semiconductor wafers having low-k dielectric layers anorganic boundary lubricating layer is preferred. Finishing asemiconductor wafer using the friction control subsystem and methodsdiscussed herein can improve finishing. An organic lubricating boundarylayer can help reduce harmful tangential friction forces. Illustrativenonlimiting examples of low-k dielectrics are low-k polymeric materials,low-k porous materials, and low-k foam materials. A preferred low-kdielectric can be a spin-on dielectric. “SiLK” and “FLARE” areillustrative examples of spin-on low-k dielectrics. A preferred low-k isa CVD low-k film. “Black Diamond” and SiOF are illustrative examples ofCVD low-k films. A preferred low-k dielectric is a porous film. Xerogelsand aerogels are illustrative examples of low-k porous films.Illustrative examples include doped oxides, organic polymers, highlyfluorinated organic polymers, and porous materials.

Given the guidance and disclosure herein, one of skilled in the art cangenerally see that the friction sensor subsystems and finishing sensorsubsystems can easily be used to detect changes to the finishing elementfinishing surface by monitoring real time changes in friction whether ornot changes in lubrication are made and this information can be used bythe subsystem to determine advantageous timing for finishing elementfinishing conditioning and thus improve finishing to a workpiecesurface. Given the guidance and disclosure herein, one of skilled in theart can easily see that the friction sensor subsystems and finishingsensor subsystems can easily be used to detect changes in friction tothe finishing element finishing surface by monitoring real time changesin friction, whether or not changes in lubrication are made. Frictionsensor surface can be surfaces similar to the workpiece, surfacesessentially identical to those contained in the workpiece, a standardsurface to compare surface friction against, or even an identicalfinishing element finishing surface. By measuring the change in frictionwith time or number of wafers process, improved and cost effectivefinishing element conditioning can be accomplished. At least twofriction sensor probes are preferred when lubricants are used to helpdifferent changes in friction due to finishing element finishing surfacewear and changes due to lubricant additions and/or changes. The frictionsensor probes can be used for finishing element finishing surfaceshaving a fixed abrasive. The friction sensor probes can give a real timeread-out on changes to the ‘cut-ability” of the fixed abrasive finishingelement finishing surfaces and they can also be used to adjust finishingcontrol parameters appropriately to these changes to effect improvedfinishing of the workpiece surface.

Common semiconductor wafer finishing involves the removal of one layercomprised predominantly of a conductive material such as copper duringfinishing in order to change the to a predominantly conductive material.Changes in friction measured by the friction sensor probes, with orwithout the addition of lubricant, along with knowledge of finishingperformance as a function of this measure friction, and particularlywhen integrated with a workpiece sensor, can deliver good finishingcontrol and ability to stop finishing when desired. Changes in frictionmeasured by a plurality of operative friction sensors, with or withoutthe addition of lubricant, along with knowledge of finishing performanceas a function of this measure friction, and particularly when integratedwith a workpiece sensor (and preferably, a plurality of workpiecesensors), can deliver good finishing control and ability to stopfinishing when desired. Organic lubricants are preferred. Inorganiclubricants can also be used. Solid lubricants can be used. End pointscan be detected by detecting a changed level of friction at theoperative finishing interface by using the friction sensor probes todetect and develop information to correct in real time to changingfinishing control parameters including, but not limited to, changes inlubrication and changes in finishing element finishing surface changeswith time.

Finishing methods, finishing apparatus, and use of a controllersubsystem for control of finishing is generally known to those skill inthe workpiece finishing arts. Illustrative nonlimiting backgroundinformation can be found in U.S. Pat. Nos. 6,267,644 to Molnar,6,283,829 to Molnar, 6,291,349 to Molnar, 6,293,851 to Molnar, 6,346,202to Molnar, 6,390,890 to Molnar, 6,413,153 to Molnar, 6,428,388 toMolnar, 6,435,948 to Molnar, 6,541,381 to Molnar, 6,551,933 to Molnar,6,568,989 to Molnar, 6,634,927 to Molnar, 6,641,463 to Molnar, 6,656,023to Molnar, 6,719,615 to Molnar, 7,131,890 to Molnar, and 7,156,717 toMolnar and they are included by reference in their entirety for allpurposes and for all reasons and for general guidance and appropriatemodification by those skilled in the arts.

SUMMARY

Particularly preferred embodiments are summarized herein as for examplein the brief summary of the invention. FIGS. 10-13 show someparticularly preferred embodiments. As is generally known in thesemiconductor wafer art, development of actual preferred embodiments isgenerally accomplished in stages along with numerous process and designspecific information. For example, dielectric layer composition,conductor layer composition, and feature sizes can change the preciseoptimum finishing control parameters and/or refining method. Informationon or derived from dielectric layers such as low-k layers can be usefulfor and related to manufacturing control of a workpiece. Information on,from, related to, or derived from dielectric layers such as low-k layerscan be useful for and related to finishing control of a workpiece.Information on, from, related to, or derived from patterning can beuseful for and related to manufacturing control of a workpiece.Information on, from, related to, or derived from patterning can beuseful for and related to finishing control of a workpiece. Informationon or derived from cleaning can be useful for and related tomanufacturing control of a workpiece. Information on, from, related to,or derived from cleaning can be useful for and related to finishingcontrol of a workpiece. Information on, from, related to, or derivedfrom finishing and finishing control can be used to change a model.Information on, from, related to, or derived from finishing andfinishing control can be used to change a process model. Information on,from, related to, or derived from finishing and finishing control can beused to change a cost model. Information on, from, related to, orderived from finishing and finishing control can be used to change amanufacturing control. Information on, from, related to, or derived fromfinishing and finishing control can be used to change a predictivecontrol. Information on, from, related to, or derived from finishing andfinishing control can be used to change a real time control. Informationon, from, related to, or derived from finishing and finishing controlcan be used for data mining and to change a data mining result.Information on, from, related to, or derived from finishing andfinishing control can be used for cost of manufacture and to change aforecast cost of manufacture. Given the teachings and guidance containedherein, preferred embodiments are generally implemented in stages withvarious workpiece manufacturers while taking into account numerousbusiness, process, and product specific information by those generallyskilled in the semiconductor wafer arts. Although the implementation ofa preferred embodiment may have generally numerous steps while takinginto account the numerous business, process, and product specificinformation, implementation merely requires routine experimentation andeffort given the teachings and guidance contained herein. Thus althoughthe implementation may be somewhat time-consuming, it is nevertheless agenerally routine undertaking for those of ordinary skill in the arthaving the benefit of the information and guidance contained herein. Insome discussion herein, generally known information, processes,procedures, and apparatus have not been belabored so as not to obscurepreferred embodiments of the present invention.

Artisans, given the teachings and guidance herein, given the teachingsand guidance herein, generally understand a that a cost of manufacturemodel can be used in different ways for control and business needs. Asillustrative examples, cost of manufacture models and/or their use canbe directed at variable costs, fixed costs, and/or quality costs andthus effectively used for control at least in part. As illustrativeexamples, cost of manufacture models can be directed at onemanufacturing operation's cost (for example planarizing) and/or amultiplicity of manufacturing operations' costs. As illustrativeexample, cost of manufacture models can be directed at one manufacturingoperation's cost (for example, adding copper) and a second operation(for example, removing copper) and interrelationships and interactionstherebetween.

Artisans, given the teachings and guidance herein, generally understandwhen manufacturing operations are related. As an illustrative example,when a manufacturing operation “A” (including information therefrom) caninfluence a manufacturing operation “B”, then manufacturing operation“A” is related to and/or related in part to manufacturing operation “B”.As an illustrative example, when a manufacturing operation “A”(including information therefrom) can affect a manufacturing operation“B”, then manufacturing operation “A” is related to and/or related atleast in part to manufacturing operation “B”. As an illustrativeexample, when a manufacturing operation “A” (including informationtherefrom) can be used and influence a process model for a manufacturingoperation “B”, then manufacturing operation “A” is related to and/orrelated at least in part to manufacturing operation “B”. As anillustrative example, when a manufacturing operation “A” (includinginformation therefrom) is used for feedforward and/feedback control fora manufacturing operation “B”, then manufacturing operation “A” isrelated to and/or related at least in part to manufacturing operation“B”. Operation “A” and operation “B” can be carried out in any ordersuch as operation “A” first, operation “B” first, or the operationsperformed simultaneously and/or at least in part simultaneously. Usingthe teachings and guidance herein artisans in the art can readilyunderstand related manufacturing operations and/or manufacturinginformation useful in the instant methods and apparatus.

Some portions of the invention are presented in terms of electronicoperations, procedures, steps, logic blocks, processor processing,controlling, determining and other symbolic representations ofoperations on information and/or data bits that can be performed onprocessor readable and/or computer readable memory. These descriptionsand representations are the means used by those skilled in the dataprocessing arts and/or process control arts to which effectively conveythe substance of their work to others skilled in the art. A procedure,computer executed step, logic block, process, etc., is here, andgenerally, conceived to be a self-consistent sequence of steps orinstructions or firmware leading to a targeted result. The operationsand/or steps are those requiring physical manipulations of physicalquantities. Usually, though not necessarily, these quantities take theform of electrical or magnetic signals capable of being stored,transferred, combined, compared, and otherwise manipulated in aprocessor and/or computer system. Generally information can be referredto as bits, values, elements, symbols, characters, terms, (numbers, orthe like.

It is generally recognized within the context in which they are usedthat all of these and similar terms can be associated with theappropriate physical quantities and are merely convenient labels appliedto these quantities. Discussions utilizing terms in association such as“accessing” or “computing” or “calculating” or “determining” or“selecting” or “storing” or “selecting” or “moving” or “changing” or“determining” or “optimizing” or “evaluating” or “estimating” or“measuring” or “recording” or “associating” or the like, generally referto the action and processes of a processor, controller, or computersystem, or similar electronic processing or computing device, thatmanipulates, changes, and/or transforms data represented as physical(electronic) quantities within the processor, memory, and/or a computersystem's registers and memories into other data similarly represented asphysical quantities within the computer system memories or registers orother such information storage, transmission or display devices whendiscussing electronic processing.

Illustrative nonlimiting examples useful technology have been referencedby their patents numbers and all of these patents are included herein byreference in their entirety for further general guidance andmodification by those skilled in the arts. The scope of the inventionshould be determined by the appended claims and their legal equivalents,rather than by the preferred embodiments and details as discussedherein.

1. A method for processing a workpiece, the method comprising: providingi) an at least one finishing apparatus “A” for an at least one finishingoperation, ii) an at least one piece of workpiece fabrication machinery“B” other than the at least one finishing apparatus “A”, iii) an atleast one piece of metrology equipment, iv) an at least one processorreadable memory device, v) an at least one operative computerizednetwork connecting the at least one processor readable memory device,the at least one finishing apparatus “A”, the at least one piece ofworkpiece fabrication machinery “B”, and the at least one piece ofmetrology equipment; finishing the workpiece with the at least onefinishing apparatus; sensing an in situ finishing information with anoperative sensor; determining a change for a process control parameterusing an at least one processor, the at least one operative computerizednetwork, and a family of processing information comprising (i) an atleast one yield information at least in part related to a cost ofmanufacture, (ii) the in situ finishing information, (iii) aninformation from the at least one piece of metrology equipment at leastin part related to the at least one finishing operation, (iv) aninformation at least in part related to the at least one finishingapparatus “A”, and (v) an information at least in part related to the atleast one workpiece fabrication machinery “B” and at least in partrelated to the at least one finishing operation; and changing theprocess control parameter to change a processing control with anoperative controller and wherein the processing control comprises aprocessing control at least in part related to the at least onefinishing operation.
 2. The method of claim 1 wherein the at least onepiece of workpiece fabrication machinery “B” comprises a patterningapparatus and a cleaning apparatus and wherein the information at leastin part related to the at least one workpiece fabrication machinery “B”and at least in part related to the at least one finishing operationcomprises an information at least in part related to the patterningapparatus, at least in part related to the cleaning apparatus, and atleast in part related to the at least one finishing operation.
 3. Themethod of claim 2 wherein the process control parameter is changed insitu.
 4. The method of claim 2 wherein the process control parameter ischanged in real time.
 5. The method of claim 1 wherein the processcontrol parameter is changed in situ.
 6. The method of claim 1 whereinthe process control parameter is changed in real time.
 7. A method forprocessing a workpiece, the method comprising: providing i) an at leastone planarizing apparatus “A” for an at least one planarizing operation,ii) an at least one piece of workpiece fabrication machinery “B” otherthan the at least one planarizing apparatus “A”, iii) an at least onepiece of metrology equipment, iv) an at least one processor readablememory device, v) an at least one operative computerized networkconnecting the at least one processor readable memory device, the atleast one planarizing apparatus “A”, the at least one piece of workpiecefabrication machinery “B”, and the at least one piece of metrologyequipment; planarizing the workpiece with the at least one planarizingapparatus; sensing an in situ planarizing information with an operativesensor; determining a change for a process control parameter using an atleast one processor, the at least one operative computerized network,and a family of processing information comprising (i) an at least oneyield information at least in part related to a cost of manufacture,(ii) the in situ planarizing information, (iii) an information from theat least one piece of metrology equipment at least in part related tothe at least one planarizing operation, (iv) an information at least inpart related to the at least one planarizing apparatus “A”, and (v) aninformation at least in part related to the at least one workpiecefabrication machinery “B” and at least in part related to the at leastone planarizing operation; and changing the process control parameter tochange a processing control with an operative controller and wherein theprocessing control comprises a processing control at least in partrelated to the at least one planarizing operation.
 8. The method ofclaim 7 wherein the at least one piece of workpiece fabricationmachinery “B” comprises a patterning apparatus and a cleaning apparatusand wherein the information at least in part related to the at least oneworkpiece fabrication machinery “B” and at least in part related to theat least one planarizing operation comprises an information at least inpart related to the patterning apparatus, at least in part related tothe cleaning apparatus, and at least in part related to the at least oneplanarizing operation.
 9. The method of claim 8 wherein the processcontrol parameter is changed in situ.
 10. The method of claim 8 whereinthe process control parameter is changed in real time.
 11. The method ofclaim 7 wherein the process control parameter is changed in situ. 12.The method of claim 7 wherein the process control parameter is changedin real time.
 13. A method for processing a workpiece, the methodcomprising: providing i) an at least one polishing apparatus “A” for anat least one polishing operation, ii) an at least one piece of workpiecefabrication machinery “B” other than the at least one polishingapparatus “A”, iii) an at least one piece of metrology equipment, iv) anat least one processor readable memory device, v) an at least oneoperative computerized network connecting the at least one processorreadable memory device, the at least one polishing apparatus “A”, the atleast one piece of workpiece fabrication machinery “B”, and the at leastone piece of metrology equipment; polishing the workpiece with the atleast one polishing apparatus; sensing an in situ polishing informationwith an operative sensor; determining a change for a process controlparameter using an at least one processor, the at least one operativecomputerized network, and a family of processing information comprising(i) an at least one yield information at least in part related to a costof manufacture, (ii) the in situ polishing information, (iii) aninformation from the at least one piece of metrology equipment at leastin part related to the at least one polishing operation, (iv) aninformation at least in part related to the at least one polishingapparatus “A”, and (v) an information at least in part related to the atleast one workpiece fabrication machinery “B” and at least in partrelated to the at least one polishing operation; and changing theprocess control parameter to change a processing control with anoperative controller and wherein the processing control comprises aprocessing control at least in part related to the at least onepolishing operation.
 14. The method of claim 13 wherein the at least onepiece of workpiece fabrication machinery “B” comprises a patterningapparatus and a cleaning apparatus and wherein the information at leastin part related to the at least one workpiece fabrication machinery “B”and at least in part related to the at least one polishing operationcomprises an information at least in part related to the patterningapparatus, at least in part related to the cleaning apparatus, and atleast in part related to the at least one polishing operation.
 15. Themethod of claim 14 wherein the process control parameter is changed insitu.
 16. The method of claim 14 wherein the process control parameteris changed in real time.
 17. The method of claim 13 wherein the processcontrol parameter is changed in situ.
 18. The method of claim 13 whereinthe process control parameter is changed in real time.
 19. The method ofclaim 14 additionally comprising using a lubricant during polishing. 20.The method of claim 13 additionally comprising using a lubricant duringpolishing.